• Title/Summary/Keyword: AR processes

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Simulation and Characteristic Measurement with Sputtering Conditions of Triode Magnetron Sputter

  • Kim, Hyun-Hoo;Lim, Kee-Joe
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.11-14
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    • 2004
  • An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

The Potential Effects of Climate Change on Streamflow in Rivers Basin of Korea Using Rainfall Elasticity

  • Kim, Byung Sik;Hong, Seung Jin;Lee, Hyun Dong
    • Environmental Engineering Research
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    • v.18 no.1
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    • pp.9-20
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    • 2013
  • In this paper, the rainfall elasticity of streamflow was estimated to quantify the effects of climate change on 5 river basins. Rainfall elasticity denotes the sensitivity of annual streamflow for the variations of potential annual rainfall. This is a simple, useful method that evaluates how the balance of a water cycle on river basins changes due to long-term climate change and offers information to manage water resources and environment systems. The elasticity method was first used by Schaake in 1990 and is commonly used in the United States and Australia. A semi-distributed hydrological model (SLURP, semi-distributed land use-based runoff processes) was used to simulate the variations of area streamflow, and potential evapotranspiration. A nonparametric method was then used to estimate the rainfall elasticity on five river basins of Korea. In addition, the A2 (SRES IPCC AR4, Special Report on Emission Scenarios IPCC Fourth Assessment Report) climate change scenario and stochastic downscaling technique were used to create a high-resolution weather change scenario in river basins, and the effects of climate change on the rainfall elasticity of each basin were then analyzed.

Thermal and Chemical Quenching Phenomena in a Microscale Combustor (I) -Fabrication of SiOx(≤2) Plates Using ion Implantation and Their Structural, Compositional Analysis- (마이크로 연소기에서 발생하는 열 소염과 화학 소염 현상 (I) -이온 주입법을 이용한 SiOx(≤2) 플레이트 제작과 구조 화학적 분석-)

  • Kim Kyu-Tae;Lee Dae-Hoon;Kwon Se-Jin
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.5 s.248
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    • pp.397-404
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    • 2006
  • Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

Development of Surface Treatment for Hydrophobic Property on Aluminum Surface (알루미늄의 발수 표면처리 기술 개발)

  • Byun, Eun-Yeon;Lee, Seung-Hun;Kim, Jong-Kuk;Kim, Yang-Do;Kim, Do-Geun
    • Journal of the Korean institute of surface engineering
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    • v.45 no.4
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    • pp.151-154
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    • 2012
  • A hydrophobic surface has been fabricated on aluminum by two-step surface treatment processes consisting of structure modification and surface coating. Nature inspired micro nano scale structures were artificially created on the aluminum surface by a blasting and Ar ion beam etching. And a hydrophobic thin film was coated by a trimethylsilane ($(CH_3)_3SiH$) plasma deposition to minimize the surface energy of the micro nano structure surface. The contact angle of micro nano structured aluminum surface with the trimethylsilane coating was $123^{\circ}$ (surface energy: 9.05 $mJ/m^2$), but the contact angle of only trimethylsilane coated sample without the micro nano surface structure was $92^{\circ}$ (surface energy: 99.15 $mJ/m^2$). In the hydrophobic treatment of aluminum surface, a trimethylsilane coated sample having the micro nano structure was more effective than only trimethylsilane coated sample without the micro nano structure.

Preparation and characterization of TiO2 anti-reflective layer for textured Si (100)

  • Choe, Jin-U;Nam, Sang-Hun;Jo, Sang-Jin;Bu, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.322-322
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    • 2010
  • Recently, anti-reflective films (AR) are one of the most studied parts of a solar cell since these films improve the efficiency of photovoltaic devices. Also, anti-reflection films on the textured silicon solar cells reduce the amount of reflection of the incident light, which improves the device performance due to light trapping of incident light into the cell. Therefore, we preformed two step processes to get textured Si (100) substrate in this experiment. Pyramid size of textured silicon had approximately $2{\sim}9\;{\mu}m$. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at $600^{\circ}C$ using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and $1000^{\circ}C$, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about $75{\pm}5\;nm$. The reflectance at specific wavelength can be reduced to 3% in optimum layer.

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Removal of PCBs in Aqueous Phase in Ultraviolet (UV), Ultrasonic (US), and UV/US Processes (자외선 및 초음파 공정에 의한 수용액 상의 PCBs 분해)

  • Lee, Dukyoung;Son, Younggyu
    • Journal of Soil and Groundwater Environment
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    • v.26 no.4
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    • pp.1-7
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    • 2021
  • The removal of PCBs (Polychlorinated biphenyls) in aqueous phase was investigated in the ultraviolet (UV) process, ultrasonics (US) process and ultraviolet/ultrasonic (UV/US) process using PCB No.7 and Aroclor 1260. For PCB No.7 relatively high removal efficiency over 90% was obtained during 20 min in the UV process and UV/US process. On the other hand, lower removal efficiency of 50 - 70% was achieved for it consisted of individual congeners of PCBs containing 3~8 of chlorine atom. It was found that the dechlorination reaction (the photolytic cleavage of C-Cl bond) was considered as a main removal mechanism in the UV process while PCBs were removed by cavitation-induced radical reaction in the US process. No significant dechlorination occurred in the US process. Consequently, it was suggested that the UV process or UV/US process was applicable for the removal of PCBs in aqueous phase in terms of the removal efficiency and operation time. In addition, the application of saturating gas such as Ar and Air could be considered to control redox condition and enhance the severity of acoustic cavitation for the removal of PCBs.

Digital Customized Automation Technology Trends (디지털 커스터마이징 자동화 기술 동향)

  • Song, Eun-young
    • Fashion & Textile Research Journal
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    • v.23 no.6
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    • pp.790-798
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    • 2021
  • With digital technology innovation, increased data access and mobile network use by consumers, products and services are changing toward pursuing differentiated values for personalization, and personalized markets are rapidly emerging in the fashion industry. This study aims to identify trends in digital customized automation technology by deriving types of digital customizing and analyzing cases by type, and to present directions for the development of digital customizing processes and the use of technology in the future. As a research method, a literature study for a theoretical background, a case study for classification and analysis of types was conducted. The results of the study are as follows. The types of digital customizing can be classified into three types: 'cooperative customization', 'selective composition and combination', 'transparent suggestion', and automation technologies shown in each type include 3D printing, 3D virtual clothing, robot mannequin, human automatic measurement program, AR-based fitting service, big data, and AI-based curation function. With the development of digital automation technology, the fashion industry environment is also changing from existing manufacturing-oriented to consumer-oriented, and the production process is rapidly changing with IT and artificial intelligence-based automation technology. The results of this study hope that digital customized automation technology will meet various needs of personalization and customization and present the future direction of digital fashion technology, where fashion brands will expand based on the spread of digital technology.

Geochronology and Petrogenetic processes of the so-called Hongjesa granite in the Seogpo-Deogku Area (석포(石浦)-덕구간(德邱間)에 분포(分布)하는 소위(所謂) 홍제사화강암(洪濟寺花崗岩)의 지질연대(地質年代)와 생성과정(生成過程)에 대(對)한 硏究(연구))

  • Kim, Yong Jun;Lee, Dai Sung
    • Economic and Environmental Geology
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    • v.16 no.3
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    • pp.163-221
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    • 1983
  • Main aspects of this study are to clarify geochronology and petrogenetic processes of the so-called Hongjesa granite, which is a member of various intrusive rocks exposed in the northeastern part of the Ryongnam Massif, one of the Precambrian basements of South Korea. In this study, the Hongjesa grainte is divided into four rock units based on the geologic age, mineralogical and chemical constituents, and texture: the Precambrian Hongjesa granite gneiss (Hongjesa granite Proper) and leucogranite gneiss, the Paleozoic gnessic two mica granite, and the Jurassic muscovite granite. The Hongjesa granite gneiss is identified by its grayish color, slight foliation, and porphyroblastic texture. The leucogranite gneiss is distinct by its light gray color, sand medium to coarse grained texture. The gneissic two mica granite is distinguished from others by its strong foliation, containing gray-colored feldspar phenocrysts with biotite and muscovite in varying amounts. The muscovite granite occurs as a small stock containing feldspar phenocrysts along margin of the stock. These granitic rocks vary widely in composition, reflecting the facts that they partly include highly metamorphosed xenolith and schlierens as relics of magmatic and anatectic processes. In particular, grayish porphyroblasts of microcline perthite is characteristic of the Hongjesa granite gneiss, whereas epidote and garnet occur in both the Hongjesa granite gneiss and leucogranite gneiss. These minerals are considered to be formed by potassic metasomatism and contamination of highly metamorphosed rocks deeply buried under the level of the Hongjesa granite emplacement. The individual synchronous granitic rocks plotted on Harker diagram show mostly similar trends to the Daly's values. The plots of the Hongjesa granite gneiss and gneissic two mica granite concentrate near the end part of the calc-alkalic rock series on the AMF diagrams, whereas those of the leucogranite gneiss and muscovite granite indicate the trend of the Skaergaard pluton. These granitic rocks plotted on a Q-Ab-Or diagram (petrogeny's residua system) fall well outside the trough of the system. This can be attributed to the potassic matasomatism of these rocks. On the ACF diagram, these rocks appear to be dominantly I-type prevailing over S-type. The K-Ar ages, obtained from a total of 7 samples of the leucogranite gneiss, gneissic two mica granite, muscovite granite, porphyritic alkali granite, and rhyolitic rock, in addition to the Rb/Sr ages of the Hongjesa granite gneiss by previous workers, permit the rock units to be arranged in the following chronological order: The middle Proterozoic Hongjesa granite gneiss (1714-1825 m.y.), the upper proterozoic leucogranite gneiss (875-880 m. y.), the middle Paleozoic gneissic two mica granite (384 m. y.) the upper Jurassic muscovite granite (147 m. y.), the Eocene alkali granite (52 m. y.), and the Eocene rhyolitic rock (45 m. y.). From the facts and data mentioned above, it is concluded that the so-called Hongjesa granite is not a single granitic mass but is further subdivided into the four rock units. The Hongjesa granite gneis, leucogranite gneiss, and gneissic two mica granite are postulated to be either magmatic or parautochtonous, intrusive, and the later muscovite granite is to be magmatic in origion.

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An Exploration for Types of Knowledge Building Discourse and Knowledge Building Processes in Middle School Students' Small Group Learning Using Augmented Reality (증강현실을 활용한 소집단 학습에서 나타나는 중학생의 지식 형성 담화 유형과 지식 형성 과정 탐색)

  • Nayoon Song;Yejin Lee;KiDoug Shin;Taehee Noh
    • Journal of The Korean Association For Science Education
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    • v.43 no.2
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    • pp.125-137
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    • 2023
  • This study analyzed the types of knowledge building discourse and knowledge building processes in small group learning using augmented reality. Eight 8th grade students took classes using augmented reality in solubility, boiling and melting points. These classes were carried out twice and all the classes were videotaped and recorded. Every student participated in a semi-structured interview. In the types of knowledge building discourse, the proportion of knowledge sharing and knowledge construction was similar. Beneath the knowledge sharing, the proportion of introductory level discussion was higher than identifying key elements of augmented reality. Recalling existing knowledge rarely appeared. Under the knowledge construction, the proportion of advanced level discussion was the highest and the proportion of sharing and critiquing ideas at a different level and efforts to rise above current levels of explanation was similar. The introductory level discussion and identifying key elements of augmented reality were developed into efforts to rise above current levels of explanation and sharing and critiquing ideas at a different level. Visualized results of knowledge building processes showed all the students' graph drew an upward curve, though cumulative number of impact value was different by each student. As a result of the study, effective ways of improving small group learning using augmented reality are discussed.

Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.