• Title/Summary/Keyword: AR Technology

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Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
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    • v.7 no.3
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    • pp.63-71
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    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

Investigations into the Cylinder Flow Stabilities with a Thin Film Attachment

  • Doh, Deog-Hee;Jo, Hyo-Je;Kwon, Seang-Yong;Kim, Hyoung-June;Cho, Gyeang-Rae;Shin, Byeong-Rog
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.7
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    • pp.957-965
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    • 2011
  • The wakes of a cylindrical body have been investigated. The cylindrical body was attached with a thin film. The film is made of silicon with configurations of 50mm(W) ${\times}$ 150mm(L) ${\times}$ 0.3mm(T). The cylinder wakes have been measured with PIV experiments under the conditions with and without the thin film. The diameter of the installed cylinder body is 30mm and the Reynolds numbers are 2730, 6160 and 9750 with the diameter. The measurement system consists of an Ar-ion laser(6W), a high speed camera(1024 ${\times}$ 992 pixel, 500fps) and a host computer. FFT analyses have been carried out using the velocity vectors obtained by PIV measurements at the point X/D=1.52 and Z/D=0.52. For understanding the three-dimensional flow structures, a new Volumetric PTV(particle tracking velocimetry) has been constructed, in which the same four high-resolution cameras have been used. It has been verified that the flexible film suppresses or damps the vortices separated from the cylinder body, which makes the cylinder's wakes stable. With increase of Re numbers the intensity of the dominant frequency of the wakes become smaller.

Photoluminescence and long after -glow characteristics of $Sr_{1-x}Eu_xAl_2O_4$phosphor ($Sr_{1-x}Eu_xAl_2O_4$ 형광체의 발광 및 장잔광특성)

  • 이영기;김병규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.493-497
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    • 1998
  • The synthesis of $Sr_{1-x}Eu_xAl_2O_4$ (x=0.005~0.2;mol%) phosphors and its properties of both photoluminescence and long-phosphorescent were investigated as a function of $Eu_2O_3$ composition. The peak wavelengths (520 nm) of phosphorescence spectra were found not to vary with the $Eu_2O_3$ composition (x) of $Sr_{1-x}Eu_xAl_2O_4$ crystals. Single phase of $SrAl_2O_4$ which determined by XRD and PL was obtained with the compositions of x<0.05 mol%. After the removal of light excitation (360 nm), the excellent after-glow characteristics of the phosphorescence were obtained with the $Eu_2O_3$ compositions of x<0.05 mol%, although the after-glow intensities for all phosphors vary exponentially with the times.

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Ground-based model study for spaceflight experiments under microgravity environments on thermo-solutal convection during physical vapor transport of mercurous chloride

  • Choi, Jeong-Gil;Lee, Kyong-Hwan;Kim, Geug-Tae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.6
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    • pp.256-263
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    • 2007
  • For $P_B=50Torr,\;P_T=5401Torr,\;T_S=450^{\circ}C,\;{\Delta}T=20K$, Ar=5, Pr=3.34, Le=0.01, Pe=4.16, Cv=1.05, adiabatic and linear thermal profiles at walls, the intensity of solutal convection (solutal Grashof number $Grs=7.86{\times}10^6$) is greater than that of thermal convection (thermal Grashof number $Grt=4.83{\times}10^5$) by one order of magnitude, which is based on the solutally buoyancy-driven convection due to the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B (He). With increasing the partial pressure of component B from 20 up to 800 Torr, the rate is decreased exponentially. It is also interesting that as the partial pressure of component B is increased by a factor of 2, the rate is approximately reduced by a half. For systems under consideration, the rate increases linearly and directly with the dimensionless Peclet number which reflects the intensity of condensation and sublimation at the crystal and source region. The convective transport decreases with lower g level and is changed to the diffusive mode at $0.1g_0$. In other words, for regions in which the g level is $0.1g_0$ or less, the diffusion-driven convection results in a parabolic velocity profile and a recirculating cell is not likely to occur. Therefore a gravitational acceleration level of less than $0.1g_0$ can be adequate to ensure purely diffusive transport.

A Study of Age Rating Criteria for Outdoor Augmented Reality Game (실외형 증강현실 게임의 등급분류기준에 관한 연구)

  • Kang, Ju-young;Lee, Hwan-soo
    • Journal of Digital Convergence
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    • v.14 no.10
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    • pp.439-447
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    • 2016
  • Interest in Augmented Reality (AR) game $Pok{\acute{e}}mon$ GO is getting heightened. However, based on its characteristic, various direct and indirect problems are highlighted, thus increasing concerns. Although the game is not formally released domestically, there are limits in national game classification to apply on such outdoor Augmented Reality game. This paper will examine the problematic cases regarding Pokemon GO and analyze internal and external game classification system to discuss safe gaming measures for domestic users. In result of examining cases, need for adding 'physical danger' in current game classification system for user's safety was shown. As the government's game regulation is being eased, appearance of a variety of games using Augmented Reality technology in near future is predicable. Therefore it is important to prepare improvement of game classification system as a pre-safety measure, and it is expected to bring positive effect on game usage and industrial growth through safe game usage.

Etching Property of the TaN Thin Film using an Inductively Coupled Plasma (유도결합플라즈마를 이용한 TaN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.104-104
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    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

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Improved Method for Increasing Maintenance Efficiency of Construction Structure Using Augmented Reality by Marker-Less Method (비마커기반 증강현실을 이용한 건설 구조물 유지관리 효율화 방안)

  • Moon, So Yeong;Yun, Su Young;Kim, Hyeon Seung;Kang, Leen Seok
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.35 no.4
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    • pp.961-968
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    • 2015
  • As BIM has been increasingly applied to building project recently, its application to civil engineering project is also on the rise. As construction structures have been expanded and complicated in a size and type, the information for handling maintenance process has also increased. Thus, to actively utilize the BIM information created at the design stage, this study has been carried out to establish a maintenance system using a marker-less based augmented reality method, by presenting a maintenance system for the construction structures using augmented reality. A SURF algorithm is used to link the 3D objects in the design and construction phases to the maintenance phase. The presented method in this study can increase the utilization of 3D information created at the design stage, by offering an augmented reality technology at the maintenance stage. The method could also improve the efficiency of visual inspection on construction structures by augmenting 3D model of a bridge structure.

Application of Pulsed Laser Deposition Method for ZnO Thin Film Growth and Optical Properties (ZnO 박막 성장과 광학적 특성 분석을 위한 펄스 레이저증착(PLD)방법 적용)

  • Hong Kwang Joon;Kim Jae Youl
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.14 no.2
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    • pp.33-41
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    • 2005
  • ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

Real-time Human Pose Estimation using RGB-D images and Deep Learning

  • Rim, Beanbonyka;Sung, Nak-Jun;Ma, Jun;Choi, Yoo-Joo;Hong, Min
    • Journal of Internet Computing and Services
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    • v.21 no.3
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    • pp.113-121
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    • 2020
  • Human Pose Estimation (HPE) which localizes the human body joints becomes a high potential for high-level applications in the field of computer vision. The main challenges of HPE in real-time are occlusion, illumination change and diversity of pose appearance. The single RGB image is fed into HPE framework in order to reduce the computation cost by using depth-independent device such as a common camera, webcam, or phone cam. However, HPE based on the single RGB is not able to solve the above challenges due to inherent characteristics of color or texture. On the other hand, depth information which is fed into HPE framework and detects the human body parts in 3D coordinates can be usefully used to solve the above challenges. However, the depth information-based HPE requires the depth-dependent device which has space constraint and is cost consuming. Especially, the result of depth information-based HPE is less reliable due to the requirement of pose initialization and less stabilization of frame tracking. Therefore, this paper proposes a new method of HPE which is robust in estimating self-occlusion. There are many human parts which can be occluded by other body parts. However, this paper focuses only on head self-occlusion. The new method is a combination of the RGB image-based HPE framework and the depth information-based HPE framework. We evaluated the performance of the proposed method by COCO Object Keypoint Similarity library. By taking an advantage of RGB image-based HPE method and depth information-based HPE method, our HPE method based on RGB-D achieved the mAP of 0.903 and mAR of 0.938. It proved that our method outperforms the RGB-based HPE and the depth-based HPE.

Effect of Annealing Temperature on Superconducting Properties of Charcoal Doped $MgB_2$ (목탄이 첨가된 $MgB_2$의 초전도 성질에 미치는 열처리 온도의 영향)

  • Kim, Nam-Kyu;Tana, Kai Sin;Jun, Byung-Hyuk;Park, Hai-Woong;Joo, Jin-Ho;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.9 no.1
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    • pp.80-84
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    • 2007
  • Charcoal was used as a carbon source for improving the critical current density of $MgB_2$ and the effect of annealing temperature on the $J_c$ of $MgB_2$ was investigated. The charcoal powder used in this study was $1{\sim}2$ microns in size and was prepared by wet attrition milling. $MgB_2$ bulk samples with a nominal composition of $Mg(B_{0.95}C_{0.05})_2$ were prepared by in situ process of Mg and B powders. The powder mixture was uniaxially compacted into pellets and heat treated at temperatures of $650^{\circ}C\;-\;1000^{\circ}C$ for 30 minutes in flowing Ar gas. It was found that superconducting transition temperature of $Mg(B_{0.95}C_{0.05})_2$ decreased by charcoal additions which indicates the carbon substitution for boron site. $J_c$ of $Mg(B_{0.95}C_{0.05})_2$ was lower than that of the undoped $MgB_2$ at the magnetic fields smaller than 4 Tesla, while it was higher than that of the undoped sample especially at the magnetic field higher than 4 T. High temperature annealing seems to be effective in increasing $J_c$ due to the enhanced carbon diffusion into boron sites.

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