• Title/Summary/Keyword: AR Mode

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Distance between source and substrate and growth mode control in GaN nanowires synthesis (Source와 기판 거리에 따른 GaN nanowires의 합성 mode 변화 제어)

  • Shin, T.I.;Lee, H.J.;Kang, S.M.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.1
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    • pp.10-14
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    • 2008
  • We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

Investigation of Ge2Sb2Te5 Etching Damage by Halogen Plasmas (할로겐 플라즈마에 의한 Ge2Sb2Te5 식각 데미지 연구)

  • Jang, Yun Chang;Yoo, Chan Young;Ryu, Sangwon;Kwon, Ji Won;Kim, Gon Ho
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.35-39
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    • 2019
  • Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

Recent Advance in High Pressure Induction Plasma Source

  • Sakuta, T.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.395-402
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    • 2001
  • An induction thermal plasma system have been newly designed for advanced operation with a pulse modulated mode to control the plasma power in time domain and to create non-equilibrium effects such as fast quenching of the plasma to produce new functional materials in high rate. The system consists of MOSFET power supply with a maximum power of 50 kW with a frequency of 460 kHz, an induction plasma torch with a 10-turns coil of 80 mm diameter and 150 mm length and a vacuum chamber. The pulse modulated plasma was successfully generated at a plasma power of 30 kW and a high pressure of 100 kPa, with taking the on and off time as 10 ms, respectively. Measurements were carried out on the time-dependent spectral lines emitted from Ar species. The dynamic behavior of plasma temperature in a pulse cycle was estimated by the Boltzmann plot and the excitation temperature of Ar atom was found to be changed periodically from around 0.5 to 1.7 eV during the cycle. Two application regions of the induction thermal plasma newly generated were introduced to material processing with high rate synthesis based on non equilibrium effects, and to the finding of new arc quenching gases coming necessary for power circuit breaker, which is friendly with earth circumstance alternative to SF6 gas.

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Fracture Toughness Embrittlement by Hydride in Zr-2.5Nb Pressure Tube (Zr-2.5Nb 압력관의 수화물에 의한 파괴인성 취화에 관한 연구)

  • Oh, Dong-Joan;Ahn, Sang-Bok;Park, Soon-Sam;An, Chang-Yun;Kim, Young-Suk
    • Proceedings of the KSME Conference
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    • 2000.11a
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    • pp.93-98
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    • 2000
  • Unpredictable failures can occur due to the DHC (delayed hydride cracking) or the degradation of fracture toughness by hydride embrittlement in CANDU pressure tube which can result from the absorption of hydrogen or deuterium in the high temperature coolant. To investigate the hydride embrittlement of CANDU Zr-2.5Nb pressure tube, the transverse tensile test and the fracture toughness test were performed from room temperature to $300^{\circ}C$ using three different specimens which have an AR (As Received), 100, and 200 ppm hydrogen. As the amount of absorbed hydrogen was increased, the transverse yield strength and the ultimate tensile strength were also increased. In addition, as the test temperature became higher they were decreased linearly. While, at room temperature, the hydrogenbsorbed specimens represented the embrittlement which resulted in sudden decreasing of fracture toughness, the fracture characteristics became ductile such as AR specimen at high temperatures. Through the observation of fracture surface using SEM, it was found that the stress state of mixed mode could be related to the fissure which was believed to decrease the global fracture toughness.

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Compositional Characterization of Petroleum Heavy Oils Generated from Vacuum Distillation and Catalytic Cracking by Positive-mode APPI FT-ICR Mass Spectrometry

  • Kim, Eun-Kyoung;No, Myoung-Han;Koh, Jae-Suk;Kim, Sung-Whan
    • Mass Spectrometry Letters
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    • v.2 no.2
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    • pp.41-44
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    • 2011
  • Molecular compositions of two types of heavy oil were studied using positive atmospheric pressure photoionization (APPI) Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS). Vacuum gas oil (VGO) was generated from vacuum distillation of atmospheric residual oil (AR), and slurry oil (SLO) was generated from catalytic cracking of AR. These heavy oils have similar boiling point ranges in the range of 210-$650^{\circ}C$, but they showed different mass ranges and double-bond equivalent (DBE) distributions. Using DBE and carbon number distributions, aromatic ring distributions, and the extent of alkyl side chains were estimated. In addition to the main aromatic hydrocarbon compounds, those containing sulfur, nitrogen, and oxygen heteroatoms were identified using simple sample preparation and ultra-high mass resolution FT-ICR MS analysis. VGO is primarily composed of mono- and di-aromatic hydrocarbons as well as sulfur-containing hydrocarbons, whereas SLO contained mainly polyaromatic hydrocarbons and sulfur-containing hydrocarbons. Both heavy oils contain polyaromatic nitrogen components. SLO inludes shorter aromatic alkyl side chains than VGO. This study demonstrates that APPI FT-ICR MS is useful for molecular composition characterization of petroleum heavy oils obtained from different refining processes.

Growth mode of epitaxial $Si_{0.5}Ge_{0.5}$ alloy layer grown on Si(100) by ion beam assisted deposition (이온선보조증착에 의한 Si(100)기판에 정합성장된 $Si_{0.5}Ge_{0.5}$박막의 성장방식)

  • Park, Sang-Uk;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.5 no.3
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    • pp.297-309
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    • 1995
  • 본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

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Characteristics of a CW Ti:sapphire Laser in a Folded Geometry (접힌 공진기 형태의 연속 발진 티타늄 사파이어 레이저의 발진 특성)

  • 강영일;차용호;남창희
    • Korean Journal of Optics and Photonics
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    • v.6 no.4
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    • pp.282-287
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    • 1995
  • We have studied the characteristics of a cw Ti:sapphire laser pumped by an Ar-ion laser. Ti:sapphire is one of the most attractive materials for the generation of ultra-short pulses because of its very broad gain bandwidth. We used a 4.1 mm thick, 0.15 wt. % $Ti^{3+}$ -doped, Brewster-angled Ti:sapphire crystal and made a folded cavity to create a strong focusing mode. The folding angle of the cavity was adjusted to $15.4^{\circ}$ to compensate for the astigmatism from the Brewster-angled Ti:sapphire crystal. 5 WAr-ion laser was used as a pumping source. We observed that the Ti:sapphire cw output power was sensitively changed with respect to the condition of the folded cavity. The threshold pumping power was 2 Wand the slope efficiency was 16% when an output coupler of 10% transmission was used. The maximum output power was more than 450 mW at 5 W pumping. mping.

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유도 결합 플라즈마를 이용한 스퍼터-승화 증착 시스템의 공정 분석

  • Yu, Yeong-Gun;Choe, Ji-Seong;Ju, Jeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.186-186
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    • 2013
  • 종래의 흑연 위주 연료전지 분리판 개발되어 최근 고분자 전해질 막 연료전지가 높은 전력, 낮은 배기 가스 배출, 낮은 작동 온도로 자동차 산업에서 상당한 주목을 받고 있다. 요구사항은 높은 전기 전도도, 높은 내식성, 낮은 가스 투과성, 낮은 무게, 쉬운 가공, 낮은 제조비용이다. Thin film Cr 장비로 저항가열 furnace, sputter 등이 사용된다. 연료전지 분리판의 고전도도, 내부식성 보호막의 고속 증착을 위한 새로운 증착원으로 스퍼터 - 승화형 소스의 가능성을 유도 결합 플라즈마에 금속 봉을 직류 바이어스 함으로써 시도하였다. 유도 결합 플라즈마를 이용하여 승화증착 시스템을 사용하여 OES (SQ-2000)와 QMS (CPM-300)를 사용하여 $N_2$ flow에 따른 유도 결합 플라즈마를 이용한 스퍼터-승화증착 시스템을 사용 하여도 균일한 공정을 하는 것을 확인 하였다. 5 mTorr의 Ar 유도 결합 플라즈마를 2.4 MHz, 500 W로 유지하면서 직류 바이어스 전력을 30 W (900 V, 0.02 A) 인가하고, $N_2$의 유량을 0.5, 1.0, 1.5 SCCM로 변화를 주어 특성을 분석하였다. MID (Multiple Ion Detection) mode에서 유도결합 플라즈마를 이용한 스퍼터-승화 증착 장비를 사용하여 CrN thin flim 성장시켰고, deposition rate은 44.8 nm/min으로 얻을 수 있었다. 또한 $N_2$의 유량이 증가할 수록 bias voltage가 증가하는 것을 확인 할 수 있었다. OES time acquisition을 이용한 공정 분석에서는 $N_2$ 유량을 off 하였을 때 Ar, Cr의 중성 intensity peak이 상승하였고, 시간 경과에 따라 sublimation에 의한 영향이 없는 것을 확인 할 수가 있었다. XRD data에서는 질소 유량이 증가함에 따라 $Cr_2N$이 감소하고, CrN이 증가하는 것을 확인할 수가 있었다. 결정배향성과 Morphology는 다결정 재료의 경도에 영향을 주는 인자이다. CrN 결정 구조의 경우는 (200)면이 경도가 제일 높은데 (200)면에서 성장한 것을 확인 할 수 있었다. 잔류가스 분석 결과로는 일정한 Ar의 유량을 흘렸을 때 $N_2$의 변화량이 비례적인 경향이 보이는 것을 확인 할수 있었다. 또한 $N_2$가 흐르면서도 유도 결합 플라즈마를 이용한 스퍼터-승화 증착 시스템을 사용하면 일정한 공정을 하는 것을 확인 할 수 있었다. 질소의 분압이 유량에 따라서 $3.0{\times}10^{-10}$ Torr에서 $1.65{\times}10^{-9} $Torr까지 일정한 비율로 증가한다. 즉, 이 시스템으로 양산장비 설계를 하여도 가능 하다는 것을 말해준다.

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Enhanced Variable Structure Control With Fuzzy Logic System

  • Charnprecharut, Veeraphon;Phaitoonwattanakij, Kitti;Tiacharoen, Somporn
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.999-1004
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    • 2005
  • An algorithm for a hybrid controller consists of a sliding mode control part and a fuzzy logic part which ar purposely for nonlinear systems. The sliding mode part of the solution is based on "eigenvalue/vector"-type controller is used as the backstepping approach for tracking errors. The fuzzy logic part is a Mamdani fuzzy model. This is designed by applying sliding mode control (SMC) method to the dynamic model. The main objective is to keep the update dynamics in a stable region by used SMC. After that the plant behavior is presented to train procedure of adaptive neuro-fuzzy inference systems (ANFIS). ANFIS architecture is determined and the relevant formulation for the approach is given. Using the error (e) and rate of error (de), occur due to the difference between the desired output value (yd) and the actual output value (y) of the system. A dynamic adaptation law is proposed and proved the particularly chosen form of the adaptation strategy. Subsequently VSC creates a sliding mode in the plant behavior while the parameters of the controller are also in a sliding mode (stable trainer). This study considers the ANFIS structure with first order Sugeno model containing nine rules. Bell shaped membership functions with product inference rule are used at the fuzzification level. Finally the Mamdani fuzzy logic which is depends on adaptive neuro-fuzzy inference systems structure designed. At the transferable stage from ANFIS to Mamdani fuzzy model is adjusted for the membership function of the input value (e, de) and the actual output value (y) of the system could be changed to trapezoidal and triangular functions through tuning the parameters of the membership functions and rules base. These help adjust the contributions of both fuzzy control and variable structure control to the entire control value. The application example, control of a mass-damper system is considered. The simulation has been done using MATLAB. Three cases of the controller will be considered: for backstepping sliding-mode controller, for hybrid controller, and for adaptive backstepping sliding-mode controller. A numerical example is simulated to verify the performances of the proposed control strategy, and the simulation results show that the controller designed is more effective than the adaptive backstepping sliding mode controller.

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Influence of thermo-physical properties on solutal convection by physical vapor transport of Hg2Cl2-N2 system: Part I - solutal convection

  • Kim, Geug-Tae;Kim, Young-Joo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.3
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    • pp.125-132
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    • 2010
  • For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.