• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• The Journal of Information Technology
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• v.8 no.2
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• pp.53-58
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• 2005

In this study, we made experiments the preparation of silver halide microcrystals, physical ripening, chemical ripening, spectral sensitivity, additives and coating in order to develop medical laser scanner film which has photographic characteristic suitable for exposure to He-Ne and Ar laser. In the practice of sensitometry, the photographic material is exposed to a known quantity and quality of radiant energy, developed under standard conditions, and the densities resulting from the various exposures are then measured. The results are usually expressed in graphic form as curves, and from these curves numerical values are derived which are used to specify the characteristics of the material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.345-350
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• 2011

This paper was carried about optimization for high efficiency of point contact solar cell. We have studied on the characteristics of power converter according to each parameter for the optimization for high efficiency of point contact solar cell on this study. We have 25.1352% of convert efficiency after adapt optimal parameters as mentioned in point body and superior conclusion is drawn by comparison with general efficiency has within 20%. At this time, the value of parameter is 100 um cell pitch, 0.01 um AR coating, 0.9 um N+ FSF thickness., etc. This study will continue to go on for optimization for efficiency in future, as it looks now, the results of this study would contribute to the business of high efficiency of point contact solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.60-63
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• 1993

We have prepared n-CdS/p-InP hetero- junction solar cells by thermal evaporation. The efficiency under the optium conditions without the grid line contact was 7.3%, and the solar cell having glid line contact with SiO AR coating was the open circuit voltage of 0.71V, the short circuit voltage current density of 15mA/cm$^2$, the fill factor of 0.73, and the efficiency of 11.5%. As result of photoresponse in 400-1000nm wavelength the cutoff of n-CdS/p-InP solar at 500nm results from absorption by the CdS \"window\" and the cutoff at 930 nm result from absorption by the InP.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.158-160
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• 1997

WHEN IT IS REQUIRED TO CONNECT OVERHEAD TRANSMISSION LINE WITH UNDERGROUND CABLE, PREVALENT METHOD WAS TO USE CABLE HEAD TYPICALLY MADE OF LATTICE STEEL STRUCTURE. BUT IN VIEW OF THE INCREASING DEMAND THAT STEEL STRUCTURE INSTALLED IN URBAN AREA AND/OR RESIDENTIAL AREA NEED TO MATCH WITH ENVIRONMENTAL SURROUNDINGS, THE UNSHAPELY LARGE-SIZED LATTICE STEEL STRUCTURE CAN NOT BE A PROPER ONE BECAUSE THAT IT IS NOT WELCOMED BY THE RESIDENTS AND ACCORDINGLY ITS INSTALLATION TENDS TO CONFRONT WITH CIVIL PETITION. AS AN ALTERNATIVE METHOD TO SETTLE AFOREMENTIONED UNFAVOURABLE SITUATION WE MAY BE UNDER, WE AR INTENDING TO DEVELOP THE CABLE HEAD MADE OF TAPERED TUBULAR STEEL POLE AND TO PUT IT TO PRACTICAL USE. THE ADVANTAGE WE CAN TAKE OF THE TAPERED TUBULAR STEEL POLE IS THAT IT CAN BE INSTALLED IN A VERY LIMITED SPACE MAXIMIZING THE UTILITY VALUE OF THE LAND AND THAT ITS SMART SHAPE WITH COLOUR COATING IN CONSIDERATION OF AESTHETIC AESTHETIC CAN BE IN GOOD HARMONY WITH THE SURROUNDINGS.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.177-181
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• 2009

Compositional gradient CrNx coatings were fabricated using arc ion plating in Ar/$N_2$ gaseous mixture by gradually increasing $N_2$ flux rate from 0 to 120 SCCM. The effect of negative substrate bias on the film microstructure and mechanical properties were systematically investigated with XRD, GDOES, and SEM. The results show that substrate bias has an important influence on film growth and microstructure of gradient CrNx coatings. The coatings mainly crystallized in the mixture of hexagonal $Cr_{2}N$ and fcc CrN phases. By increasing substrate bias, film microstructure evolved from an apparent columnar structure to an equiaxed one. With increasing substrate bias, deposition rate first increased, and then decreased. The maximum of deposition rate was 15 nm/min obtained at a bias of -50V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.155-157
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• 2009

3성분계 Ti-Si-N코팅은 $N_2$와 Ar 혼합가스 분위기하에서 Ti 소스는 아크 이온 플레이팅, Si 소스는 직류 마그네트론 스퍼터링 증착기법을 이용해 스테인리스 스틸 기판위에 합성되었다. Ti-Si-N 코팅에서 Si 함유량이 증가함에 따라 주상정 구조가 TiN 나노결정질을 $SiN_x$ 비정질이 둘러싸고 있는 독특한 나노복합체구조로 변화되었다. 상온 NaCl 3wt% 용액에서 Anodic Polarization measurement 법으로 측정된 결과에서 Si 함유량이 높아짐에 따라 나노복합체 구조로 인하여 더 우수한 내식성을 나타내었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.205-207
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• 2009

아크이온플래이팅 기술과 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 Cr-Al-Mo-N 코팅을 증착하였다. $N_2$/Ar 혼합가스 분위기하에 아크 타겟은 Cr을 사용하였고 스퍼터링 타겟은 Al과 Mo를 사용하였으며 합성된 Cr-Al-Mo-N 코팅은 주로 치환고용된 (Cr, Al, Mo)N으로 구성되었다. 최고 경도값은 Mo 함량이 24.2 at.%일 때 35 GPa을 나타냈으며 마찰계수는 Mo의 함량이 0에서 33.2 at.%로 증가함에 따라 0.9에서 0.48로 감소하였다. 이는 $MoO_3$가 코팅면과 스틸볼 계면에서 고체 윤활제로 작용한 것으로 사료된다. 그러나 Cr-Al-Mo-N 코팅은 MoN의 낮은 내산화온도로 인하여 Cr-Al-N에 비하여 더 낮은 온도에서 산화되었다.