• 제목/요약/키워드: AMOLEDs

검색결과 28건 처리시간 0.045초

Belt Source and In-Line Manufacturing Equipment for Very Large-Size AMOLED

  • Hwang, Chang-Hun;Kim, Y.K.;Shin, Kee-Hyun;Ju, Sung-Hoo;Kwon, Jang-Hyuk
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
    • /
    • pp.651-654
    • /
    • 2006
  • The inline manufacturing equipment using a combination of the belt source and LPS source which is innovatively designed is introduced for the largesize AMOLED. The features of the inline system include 60sec TACT time, 19 numbers of chambers, non-substrate bending and easy application to very thin TFT substrates for the $4^{th}$ - $8^{th}$ Generation AMOLEDs.

  • PDF

저전압에서 다결정 실리콘 TFT의 불균일한 특성을 보상한 새로운 AMOLED 구동회로 (A Novel Poly-Si TFT Pixel circuit for AMOLED to Compensate Threshold Voltage Variation of TFT at Low Voltage)

  • 김나영;이문석
    • 대한전자공학회논문지SD
    • /
    • 제46권8호
    • /
    • pp.1-5
    • /
    • 2009
  • 본 논문에서는 저전압에서 다결정 실리콘(Polycrysta1line Silicon: Poly-Si) 박막 트랜지스터 (Thin Film Transistors: TFTs) 의 문턱전압(threshold voltage)의 불균일성을 보상한 새로운 AMOLEDs(Active Matrix Organic Light Diodes) 구동 회로를 제안한다, 제안한 회로는 6개의 스위칭, 1개의 드라이빙 TFT와 1개의 저장 콘덴서로 구성되어 있으며, SPICE 시뮬레이션을 통해 구동회로의 동작을 검증하였다. 시뮬레이션 결과 5V정도의 낮은 구동 전압($V_{DD}$)에서 제안한 화소 구동회로의 OLED 출력 전류는 0.8%정도의 오차를 갖는 반면 기본적인 구동회로의 경우 약20%정도의 오차를 갖는 것을 확인할 수 있었다. 본 논문에서 제안한 화소 구동회로는 OLED의 전류를 결정하는 driving TFT의 threshold voltage 변화에 따른 전류의 변화를 성공적으로 보상하였고, 안정화된 전류를 OLED를 흘려주어 기본적인 화소 회로가 가지고 있던 불균일화의 문제를 해결함을 알 수 있다.

고출력 세라믹 LED 패키지의 방열 특성 평가 및 해석 연구 (Thermal Characterization and Analysis of High Power Ceramic LED Package)

  • 조현민;최원길;정봉만
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.315-316
    • /
    • 2009
  • 본 논문에서는 1W 급 이상의 고출력 LED 용 패키지로서 세라믹 LTCC 적층 패키지의 방열 특성을 평가하고 열해석 결과와의 차이에 대해 고찰하였다. 특히, 세라믹 패키지의 방열 특성을 향상시키기 위해 Thermal Via와 Heat slug를 LED Chip 하단부에 위치시켰을 때 방열 특성을 평가하기 위해 Transient Thermal Test를 이용하여 각각의 경우에 대한 열저항을 평가하여 방열 특성의 항상 정도를 확인하였으며, 열해석 시뮬레이션을 통해 얻은 결과와 비교하였다. 평가 결과 Heat slug를 배치한 패키지가 열저항이 $8^{\circ}C/W$로서 가장 우수한 특성을 보여주었으며, 열해석 결과와의 차이에 대해서는 광출력으로 방출된 전력을 계산하여 보정함으로써 $1^{\circ}C$ 이하의 편차를 보여주는 결과를 얻을 수 있었다.

  • PDF

Belt Source and In-Line Manufacturing Equipment for Very Large-Size AMOLED

  • Hwang, Chang-Hun;Kim, Yong-Ki;Lee, Tae-Hee;Yu, Sin-Jae;Kim, Sung-Su;Shin, Kee-Hyun;Ju, Sung-Hoo;Kwon, Jang-Hyuk
    • Journal of Information Display
    • /
    • 제7권4호
    • /
    • pp.17-20
    • /
    • 2006
  • The inline manufacturing equipment using a combination of the belt source and LPS source which is innovatively designed is introduced for the large-size AMOLED. The features of the inline system include 60sec TACT time, 19 numbers of chambers, non-substrate bending and easy application to very thin TFT substrates for the $4^{th}$ - $8^{th}$ Generation AMOLEDs.

Oxide TFT as an Emerging Technology for Next Generation Display

  • Kim, Hye-Dong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.119-122
    • /
    • 2008
  • In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

  • PDF

An Area Efficient 8-bit Current DAC for Current Programming AMOLEDs

  • Lee, B.K.;Kang, J.S.;Lee, J.K.;Han, J.U.;Kwon, O.K.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
    • /
    • pp.215-217
    • /
    • 2006
  • This paper presents an area efficient 8-bit current digital to analog convector (DAC) which is applied to 240 channels Active Matrix - Organic Light Emitting Diode (AMOLED) data driver. The proposed circuit constitutes 4-bit binary weighted current DAC and 4-bit switched capacitor cyclic DAC. The proposed DAC has about 70% smaller area than that of the typical binary weighted current DAC. We overcome sampling time by reducing the number of repetition phases so that it can display 8-bit gray scale image.

  • PDF

Compensation of OLED Degradation by AMOLED Pixel Circuit

  • Choi, Sang-Moo;Goo, Bon-Seok;Kang, Jin-Goo;Kim, Keum-Nam;Kim, Yang-Wan;Choi, Woong-Sik;Kim, Byung-Hee
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.466-469
    • /
    • 2009
  • The life time of AMOLED displays has been dependent on OLED materials up to this point. In particular, image sticking (burn-in) has been one of the most critical issues for AMOLEDs. This paper proposes image sticking compensation AMOLED pixel circuits to address the problem without requiring process or material improvements to the OLED itself. We verified the performance of those circuits by simulation and actual panel implementation.

  • PDF

유기박막트랜지스터(OFTF)를 이용한 AMOLED 픽셀 보상회로 연구 (A New Organic Thin-Film Transistor based Current-driving Pixel Circuit for Active-Matrix Organic Light-Emitting Displays)

  • 신아람;배영석;황상준;성만영
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
    • /
    • pp.22-23
    • /
    • 2006
  • A new current-driving pixel circuit for active-matrix organic light-emitting diodes (AMOLEDs), composed of four organic thin-film transistors (OTFTs) and one capacitor, is proposed using a current scaling method. Designing pixel circuits with OTFTs has many problems due to the instability of the OTFT parameters with still unknown characteristics of the material. Despite the problems in using OTFTs to drive the pixel circuit, our work could be set as a goal for future OTFT development. The simulation results show enhanced linearity between input data and OLEO luminescence at low current levels as well as successfully compensating the variation of the OTFTs, such as the threshold voltage and mobility.

  • PDF

Organic TFT를 이용한 AM-OLED 구동용 Pixel 보상회로 설계에 관한 연구 (Organic Thin-Film Transistor-driven Current Programming Pixel Circuit for Active-Matrix OLEDs)

  • 신아람;윤봉노;서준호;배영석;성만영
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2007년도 제38회 하계학술대회
    • /
    • pp.335-336
    • /
    • 2007
  • A new current-programmed pixel circuit for activematrix organic light emitting diodes (AMOLEDs), based on Organic TFTs (OTFTs), is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel circuit, which is a current mirror structure consisting of five Organic TFTs and one capacitor, has reliable linear characteristics between input current and output OLED current. Also, the threshold voltage degradation of Organic TFTs due to long time operation stress is well compensated to reliable values.

  • PDF

A Protective Layer on the Active Layer of Al-Zn-Sn-O Thin-Film Transistors for Transparent AMOLEDs

  • Cho, Doo-Hee;KoPark, Sang-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Cho, Kyoung-Ik;Ryu, Min-Ki;Chung, Sung-Mook;Cheong, Woo-Seok;Yoon, Sung-Min;Hwang, Chi-Sun
    • Journal of Information Display
    • /
    • 제10권4호
    • /
    • pp.137-142
    • /
    • 2009
  • Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.