• Journal of Magnetics
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• v.11 no.1
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• pp.43-50
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• 2006

In this paper, the influences of microstructural and surface morphological developments on the soft magnetic properties and giant magneto-impedance (GMI) effect of the $Fe_{73.5-x}Cr_{x}Si_{13.5}B_{9}Nb_{3}Au_1$ (x = 1, 2, 3, 4, 5) alloys have been presented. It was found that the Cr addition slightly decreased the mean grain size of $\alpha-Fe(Si)$ grains. AFM results indicate a large variation of surface morphology of density and size of protrusions along the ribbon plane due to microstructural changes caused by thermal annealing with increasing Cr content. Ultrasoft magnetic properties of the nanocrystallized samples were noticeably enhanced by properly heat treatments at $T_a=540^{\circ}C$ such as an increase of the magnetic permeability and the decrease of coercivity, which is likely due to the formation of nanoscale $\alpha-Fe(Si)$ phase which reduced the magnetoelastic anisotropy of samples. Accordingly, the GMI effect was observed in the annealed samples. The correlation between the microstructure, surface morphology, and soft magnetic properties were explained by nucleation and growth model.

• Progress in Superconductivity
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• v.11 no.2
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• pp.83-86
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• 2010

There are theoretical and experimental evidences for the pseudo-gap in electron doped cuprates being due to interaction between electrons and anti-ferromagnetism(AFM). A remaining issue is on how AFM correlates with pseudo-gap, and eventually with superconductivity. To elucidate the issue, we have performed temperature dependent angle-resolved photoemission studies of an e-doped cuprate superconductor $Sm_{2-x}Ce_xCuO_4$(SCCO) x=0.18 at 20K and 150K. In the case of $Nd_{2-x}Ce_xCuO_4$, the most well known e-doped cuprate, pseudo-gap disappears at around 100 K for x=0.17. Our experimental result reveals that the pseudo-gap of SCCO exists even at 150K for x=0.18. This result implies that the AFM of SCCO survives even in x=0.18, which agrees with previously reported phase diagram of SCCO. Yet, the superconductivity disappears around x=0.18 for both NCCO and SCCO in spite of the difference in the magnetic order. This result sheds a light on the disappearance of superconductivity on the over-doped side.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.

• Membrane and Water Treatment
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• v.7 no.2
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• pp.155-173
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• 2016

The present work has been focused on the development of polysulfone (PSf) ultrafiltration membrane via blending by sulfonated polyethersulfone (SPES) in order to permeability enhancement for ultrafiltration of cheese whey. In this regards, sulfonation of polyethersulfone was carried out and the degree of sulfonation was estimated. The effect of blend ratio on morphology, porosity, permeation and fouling of PSf / SPES membranes was investigated. Filtration experiments of whey were conducted for separation of macromolecules and proteins from the lactose enrichment phase. The morphology and performance of membranes were evaluated using different techniques such SEM, AFM, and contact angle measurements. The contact angle measurement showed that the hydrophilicity of membrane was increased by adding SPES. According to AFM images, PSf / SPES membranes exhibited lower roughness compared to neat PSf membrane. The water and whey flux of these membranes were higher than neat membrane. However, flux was decreased when the PSf / SPES blend ratio was 0/100. It can be attributed to pore size and morphology changes. Further, fouling parameters of PSf membrane were improved after blending. The blend membranes show a great potential to be used practically in proteins separation from cheese whey.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.452-455
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.18-18
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• 2013

A FeRh alloy is a well-known efficient magnetocaloric material and some experimental and theoretical studies of bulk FeRh have been reported already by several groups. In this study we report first-principles calculations on magnetic properties of different thickness FeRh thin films in order to investigate the possibility to enhance further the magnetocaloric efficiency. We used Vienna Ab-initio Simulation Package (VASP) code. We found that the FeRh thin films have quite different magnetic properties from the bulk when the thickness is thinner than 6-atomic-layers. While bulk FeRh has a G-type antiferromagnetic (AFM) state, thin films which are thinner than 6-atomic-layers have an A-type AFM state or a ferromagnetic(FM) state. We will discuss possibility of magnetic phase transitions of the FeRh thin films in the view point of a magnetocaloric effect. And we found 4-, 5-, 6-layers films with Fe surface and 7-layers film with Rh surface are FM and they have dozens eV magnetocrystalline anisotropy (MCA) energy. MCA energy leads to determine energy barrier when magnetic states are changed by external magnetic field.