• Journal of Magnetics
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• v.11 no.1
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• pp.16-19
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• 2006

$2-\mu{m}$ thick GaN epilayer was prepared, and 80 KeV $Co^{-}$ ions with a dose of $3X10^{16}\;cm^{-2}$ were implanted into GaN at $350^{\circ}C$. The implanted samples were post annealed at $700^{\circ}C$. We have investigated the magnetic and structural properties of Co ion-implanted GaN by various measurements. HRXRD results did not show any peaks associated with second phase formation and only the diffraction from the GaN layer and substrate structure were observed. SIMS profiles of Co implanted into GaN before and after annealing at $700^{\circ}C$ have shown a projected range of $\sim390\AA$ with 7.4% concentration and that there is little movement in Co. AFM measurement shows the form of surface craters for $700^{\circ}C$-annealed samples. The magnetization curve and temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of superparamagnetic system in film. XPS measurement showed the metallic Co 2p core levels spectra for $700^{\circ}C$-annealed samples. From this, it could be explained that magnetic property of our films originated from Co magnetic clusters.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.97-100
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• 2008

Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been investigated. The $10\;{\mu}m$ thickness GaN were grown by HVPE is along A-plane ($11{\bar{2}}0$), C-plane (0001) and M-Plane ($10{\bar{1}}0$) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy. High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at ${\sim}3.4\;eV$ and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the morphology and the optical properties.

• Membrane and Water Treatment
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• v.9 no.1
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• pp.43-51
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• 2018

Hollow fiber (HF) membranes are gaining wide interest over flat membranes due to their compaction and high area to surface volume ratio. This work addresses the fabrication of HF from polysulfone (PS) and polyethersulfone (PES) using N-methylpyrrolidone (NMP) as solvent in addition to other additives to achieve desired characteristics. The semi-pilot spinning system includes jacketed vessel, four spinneret block, coagulation and washing baths in addition to dryer and winder. Different parameters affecting dry-wet spinning phase inversion process were investigated. Dope compositions of PES, NMP and polyvinyl pyrrolidone (PVP) of varying molecular weights as additive were addressed. Some critical parameters of importance were also investigated. Those include dope flow rate, air gap, coagulation & washing baths and drying temperatures. The measured dope viscosity was in the range from 1.7 to 36.5 Pa.s. Air gap distance was adjusted from 20 to 45 cm and coagulation bath temperature from 20 to $46^{\circ}C$. The HF membranes were characterized by scanning electron microscope (SEM), atomic force microscope (AFM) and mechanical properties. Results indicated prevalence of finger like structure and average surface roughness from about 29 to 78.3 nm. Profile of stress strain characteristics revealed suitability of the fibers for downstream interventions for fabrication of thin film composite membrane. Different empirical correlations were formulated which enable deeper understanding of the interaction of the above mentioned variables. Data of pure water permeability (PWP) confirmed that the fabricated samples fall within the microfiltration (MF)-ultrafiltration (UF) range of membrane separation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.276-279
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• 2008

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

• International Journal of Concrete Structures and Materials
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• v.7 no.2
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• pp.95-110
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• 2013

We report various synchrotron radiation laboratory based techniques used to characterize cement based materials in nanometer scale. High resolution X-ray transmission imaging combined with a rotational axis allows for rendering of samples in three dimensions revealing volumetric details. Scanning transmission X-ray microscope combines high spatial resolution imaging with high spectral resolution of the incident beam to reveal X-ray absorption near edge structure variations in the material nanostructure. Microdiffraction scans the surface of a sample to map its high order reflection or crystallographic variations with a micron-sized incident beam. High pressure X-ray diffraction measures compressibility of pure phase materials. Unique results of studies using the above tools are discussed-a study of pores, connectivity, and morphology of a 2,000 year old concrete using nanotomography; detection of localized and varying silicate chain depolymerization in Al-substituted tobermorite, and quantification of monosulfate distribution in tricalcium aluminate hydration using scanning transmission X-ray microscopy; detection and mapping of hydration products in high volume fly ash paste using microdiffraction; and determination of mechanical properties of various AFm phases using high pressure X-ray diffraction.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1197-1201
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• 2003

Thin film on SiO$_2$ glass was synthesized by a dip-coating method from the ZrO$_2$ sol which had dispersed nanosize Au particle under ambient atmosphere. After heat treatment of the prepared thin film, the characteristics were investigated by X-ray diffraction, UV-VIS spectrometer, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). It was found that ZrO$_2$ thin film with 100 nm thickness was crystallized to tetragonal phase at 50$0^{\circ}C$. The size of dispersed Au particle was 15∼40nm and the film had a smooth surface with a roughness of 0.84 nm. The film showed nonlinearity characteristics with absorption peaks at 630∼670nm visible region because of the plasma resonance of Au metallic particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.222-222
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• 2010

III-V반도체 태양전지는 다양한 에너지 밴드갭을 만들 수 있으며 다중접합 태양전지의 경우 흡수 전류가 커져 효율이 증가한다. 태양전지의 효율의 증가는 태양광 발전시스템의 발전 단가를 낮추는 중요한 요인이다. 우리는 효율이 높은 III-V 태양전지를 제작하기 위해 일차적으로 Ge기판 위에 GaAs를 성장하고자 한다. Ge기판과 GaAs의 격자상수는 0.07%차이로 거의 일치하나 물질의 열팽창계수가 다르고 비극성인 Ge기판 위에 극성인 GaAs를 성장 시 위상불일치(Anti Phase Domain) 나타난다. 위상불일치 현상을 줄이기 위해 성장 시 온도와 V/III비율, 성장두께 등을 달리하여 성장한다. 표면의 상태가 좋아질수록 위상불일치 현상이 작으며 단일성장 보다 두 단계 과정으로 성장 했을 때 표면의 상태가 더 좋은 결과를 바탕으로[1], 20nm 이하로 얇게 seed층을 성장하고 그 위에 두꺼운 버퍼층을 성장하는 두 단계로 진행하였다. seed층의 성장온도는 $400{\sim}550^{\circ}C$, V/III 비율을 3.5~30으로 다양하게 바꿔가면서 표면의 상태를 비교하였다. 이때 버퍼층의 성장 온도와 V/III 비율은 $680^{\circ}C$, 192으로 일정하게 유지하였다. 표면은 SEM과 AFM을 통해 분석하였으며 결정질의 상태는 XRD 장비(Panalytical사)로 분석하고 광학적 특성은 LTPL(Accent Optical Technologies사)로 측정하였다. 실험의 결과는 seed층의 온도가 낮고 V/III 비율이 낮으며 성장률이 높았을 때 표면상태가 좋은 반면 버퍼층은 온도가 높고 V/III 비율이 높으며 성장률이 낮을 때 표면상태가 좋았다. seed층을 $450^{\circ}C$온도에서 V/III 비율이 3.5이고 성장률이 버퍼층에 비교하여 크게 하여 성장 했을 때 표면 거칠기가 3.75nm로 작아 표면의 상태가 좋음을 확인할 수 있었다. 두 단계 성장 시 표면의 상태는 seed층의 조건에 따라 결정됨을 알 수 있었다. 표면상태가 좋았을 때 결정상태 역시 좋았으며 성장률이 바뀜에 따라 반치폭이 42~45 arcsec의 값을 나타내었다. 광학적 특성은 10K에서 1.1512eV 밴드갭 에너지를 가지고 있어 양질의 GaAs가 성장됨을 알 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.73-73
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• 2011

We will report a few methods to improve the efficiency and stability in small molecule based organic solar cells, including the formation of bulk heterojunctions (BHJs) through alternative thermal deposition (ATD), the use of a micro-cavity structure and interface modifications. By ATD which is a simple modification of conventional thermal evaporation, the thicknesses of alternative donor and acceptor layers were precisely controlled down to 0.1 nm, which is critical to form BHJs. The formation of a BHJ in copper(II) phthalocyanine (CuPc) and fullerene (C60) systems was confirmed by AFM, GISAXS and absorption measurements. From analysis of the data, we found that the CuPc|C60 films fabricated by ATD were composed of the nanometer sized disk shaped CuPc nano grains and aggregated C60, which explains the phase separation of CuPc and C60. On the other hand, the co-deposited CuPc:C60 films did not show the existence of separated CuPc nano grains in the CuPc:C60 matrix. The OPV cells fabricated using the ATD method showed significantly enhanced power conversion efficiency compared to the co-deposited OPV cells under a same composition [1]. We will also present by numerical simulation that adoption of microcavity structure in the planar heterojunction can improve the short circuit current in single and tandem OSCs [2]. Interface modifications also allowed us to achieve high efficiency and high stability OSCs.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.3
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• pp.134-137
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• 2012

We have considered the effect of electron irradiation energy of 300, 600 and 900 eV on structural, electrical and optical properties of $In_2O_3$ films prepared with RF magnetron sputtering. In this study, the thin film crystallization, optical transmittance and sheet resistance are dependent on the electron's irradiation energy. The electron irradiated $In_2O_3$ films at 900 eV are grown as a hexagonal wurtzite phase. The sheet resistance decreases with a increase in electron irradiation energy and $In_2O_3$ film irradiated at 900 eV shows the lowest sheet resistance of $110{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wave length region also depends on the electron irradiation energy. The film that at 900 eV shows the higher figure of merit than another films prepared in this study.