• 반도체디스플레이기술학회지
• /
• 제8권4호
• /
• pp.49-52
• /
• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 열처리공학회지
• /
• 제22권6호
• /
• pp.368-374
• /
• 2009

Nickel titanium shape memory alloys (NiTi) have been investigated for applications in the biomedical industry. However, little is known about the influences of surface modifications on the propertise of these alloys. The effect of electropolishing and heat treatments was found to exhibit significant surface roughness. Change of phase was B2, r-phase and B19' by heat treatments. In this study, effect of the electropolishing conditions on surface roughness is investigated in Ni-Ti alloys (Nitinol). Variation in phases with heat treatment temperature is investigated for a Ni-Ti alloy by X-ray diffraction and DSC. Characteristic of the microstructure have been observed by SEM. Surface roughness have been measured by AFM. The results clearly show that significant different in surface property to heat treated at $500^{\circ}C$ (R-phase). $TiO_2$ phases preciritated all of the specimens. It is not good effect of surface roughness because made to surface relief. The surface roughness appears to be important in the property of Ni-Ti alloys for biomedical applications.

• 반도체디스플레이기술학회지
• /
• 제9권4호
• /
• pp.25-29
• /
• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 반도체디스플레이기술학회지
• /
• 제10권3호
• /
• pp.15-19
• /
• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2002년도 제23회 학술발표회 초록집
• /
• pp.84-84
• /
• 2002

• Macromolecular Research
• /
• 제12권1호
• /
• pp.134-140
• /
• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• Applied Microscopy
• /
• 제42권3호
• /
• pp.129-135
• /
• 2012

In this study, the changes in hair quality before and after Magic straight perm have been evaluated through a hair damage measurement method. For this, a healthy high school student's (age18 years) wavy hair was selected and permed on the left and right sides. Then, the changes caused by physical methods which were applied during the fl at iron-based Magic straight perm were evaluated based on the hair damage measurement method before and after the Magic straight perm. According to the protein release test after the Magic straight perm, 1.26% in average and 0.14% was observed in Cool Magic straight perm sample. In a field emission scanning electron microscopy (FE-SEM) test, saw teeth-shaped partial desquamation of cuticle cells and impurities were observed in the warm-treated hair sample. In atomic force microscope (AFM), line-profile is a method to represent roughness data on hair. According to analysis on 3-dimensional (3D) images, the hair with Cool Magic straight perm was lower than the hair with Warm Magic perm in terms of the color change of 3D images. In addition, vertical changes were observed in the hair with Cool Magic perm. As a result, irregular surface roughness was observed. This study proposed a method to minimize hair damage by cooling down the heat with the cool hair straightener as soon as the Warm Magic was finished.

• 한국안광학회지
• /
• 제10권2호
• /
• pp.119-126
• /
• 2005

2개사 칼라콘택트렌즈에 대한 물성적 특성을 평가 비교하였다. 제조된 인공누액을 사용하여 단백질 침착율과 습윤성, 주사전자현미경과 원자간력현미경을 이용하여 렌즈의 표면 거칠기를 관찰하였다. 결과는 다른 특성들은 일반 소프트콘택트렌즈와 비교해서 큰 차이를 보이지 않았으나 주사전자현미경적 관찰에서 건조시 심한 균열을 보였다. 원자간력현미경적 관찰에서 렌즈 표면요철은 발견되지 않아 표면거칠기는 일반 소프트콘택트렌즈와 차이가 없었다. 렌즈 앞면과 뒷면에 대한 염료 침착을 확인한 결과 염료는 렌즈내부에 존재함을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제13권12호
• /
• pp.1032-1038
• /
• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.

• 한국표면공학회지
• /
• 제28권1호
• /
• pp.55-63
• /
• 1995

Alkaline solutions such as $NH_4$OH, choline and TMAH (($CH_3$)$_4$NOH) have been introduced in semiconductor wet processing of silicon wafers to control ionic and particulate impurities following etching in acidic solutions. These chemicals usually mixed with hydrogen peroxide and/or surfactants to control the etch rate of silicon. The highest etch rate was observed in $NH_4$OH solutions at a pH in alkaline solutions. It indicates that the etch rate depends on the content of $OH^{-}$ as well as cations of alkaline solutions. STM/AFM techniques were used to characterize the effect of alkaline solutions on silicon surface roughness. In SC1 (mixture of $NH_4$OH : $H_2$$O_2$ : $H_2$O) solutions, the reduction of the ammonium hydroxide proportion from 1 to 0.1 decreased the surface roughness ($R_{rms}$) from 6.4 to $0.8\AA$. The addition of $H_2$$O_2$ and surfactants to choline and TMAH reduced the values of $R_{p-v}$ and $R_{rms}$ significantly. $H_2$$_O2$ and surfactants added in alkaline solutions passivate bare silicon surfaces by the oxidation and adsorption, respectively. The passivation of surfaces in alkaline solutions resulted in lower etch rate of silicon thereby provided smoother surfaces.s.ces.s.