• Title/Summary/Keyword: AFM image

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Characteristics of the Topography Image of Polyurethane Polymer LB Films (폴리우레탄 고분자 LB막의 표면형상 이미지 특성)

  • Seo, Jeong-Yeul;Kim, Do-Kyun;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1708-1710
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    • 2000
  • The synthesis and characterization of polymers for organic Metal/Insulator/Metal(MIM) devices were investigated from LB films. The physicochemical properties of the LB films were examined by UV absorption spectrum and AFM. The AFM images showed for network structure of polyurethane monolayer that the film formed an unsymmetry mesh with intermolecular interaction within the large scale. The stable images are probably due to a strong interaction between the monolayer film and Si substrate. We are unable to obtain molecular resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it.

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A Study on Material Properties and Fabrication of ITO Thin Films by Unbalanced-Magnet Structure in Magnetron Sputtering (DC 마그네트론 스파터링의 비대칭 자석강조에 의한 ITO 박막 제조 및 물성에 관한 연구)

  • 신성호;김현후;박광자
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.700-705
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    • 1997
  • Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.

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Effects of Scratching on the Surface of Protein Chip Plates (단백질 칩 기판의 표면 스크래칭 효과)

  • Hyun, June-Won;Hwang, Jeong-Il
    • Journal of the Korean institute of surface engineering
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    • v.40 no.2
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    • pp.98-102
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    • 2007
  • [ $NiCl_2$ ] and poly-L-lysine coated protein chip plates have been fabricated using a spin coating system. Water has been used as solvent and scratching effects on glass slides and ITO have been investigated. We also observed the surface properties of $NiCl_2$ and poly-L-lysine coated slides by using PSA(Particle size analyzer) and AFM(Atomic force microscope). The AFM results imply that the surface patterns created in the spin coating system determine the protein adsorption. Adsorption of histidine-tagged KRS proteins immobilized on glass slides and ITO was analyzed using a BAS image system. The results suggest that the scratching effect was increased ability of protein adsorption.

Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate (패턴화된 사파이어 기판 위에 증착된 AlN 버퍼층 박막의 에피층 구조의 광학적 특성에 대한 영향)

  • Park, Kyoung-Wook;Yun, Young-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.1
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    • pp.1-6
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    • 2020
  • In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

Effects of Annealing Temperature on the Local Current Conduction of Ferromagnetic Tunnel Junction (열처리에 따른 강자성 터널링 접합의 국소전도특성)

  • Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku;Li, Ying;Park, Bum-Chan;Kim, Cheol-Gi;Kim, Chong-Oh
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.233-238
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    • 2003
  • Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

RGB Motion Segmentation using Background Subtraction based on AMF

  • Kim, Yoon-Ho
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.6 no.2
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    • pp.81-87
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    • 2013
  • Motion segmentation is a fundamental technique for analysing image sequences of real scenes. A process of identifying moving objects from data is a typical task in many computer vision applications. In this paper, we propose motion segmentation that generally consists from background subtraction and foreground pixel segmentation. The Approximated Median Filter (AMF) was chosen to perform background modeling. Motion segmentation in this paper covers RGB video data.

RGB Motion Segmentation using Background Subtraction based on AMF

  • Kim, Yoon-Ho
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.1
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    • pp.61-67
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    • 2014
  • Motion segmentation is a fundamental technique for analysing image sequences of real scenes. A process of identifying moving objects from data is a typical task in many computer vision applications. In this paper, we propose motion segmentation that generally consists from background subtraction and foreground pixel segmentation. The Approximated Median Filter(AMF) was chosen to perform background modeling. Motion segmentation in this paper covers RGB video data.

Quantification of the Scum on the Black Matrix Surface of Color Filter for LCD (LCD용 칼라필터의 Black Matrix 표면에 발생하는 잔사의 정량화)

  • Koo, Young-Mo;Lee, Jong-Seo;Yi, Choong-Hoon
    • Analytical Science and Technology
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    • v.12 no.5
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    • pp.415-420
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    • 1999
  • We estimated the quantity of the scum remaining on the Black Matrix (BM) surface of color filter. To do this, histogram was analyzed which was obtained from AFM image of the BM surface. We divided the histogram to two Gaussian functions of the free BM surface (1) and the scum (2), and calculated the areas ($a_1$, $a_2$) of both the Gaussian functions. We quantified the residue as the ratio of the area ($a_2/(a_1+a_2)$). As a result of the Gaussian functions of the free BM surface, it was revealed that another kind of residue remained on the BM surface. It was difficult to quantify it. but it could relatively be estimated from the average height and the standard deviation.

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Effective Control of Stiffness of Tungsten Probe for AFM by Electrochemical Etching (전기화학적 에칭에 의한 AFM용 텅스텐 탐침의 강성 제어)

  • Han, Guebum;Lee, Seungje;Ahn, Hyo-Sok
    • Tribology and Lubricants
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    • v.30 no.4
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    • pp.218-223
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    • 2014
  • This paper presents a method of controlling the stiffness of a tungsten probe for an atomic force microscope (AFM) in order to provide high-quality phase contrast images in accordance with sample characteristics. While inducing sufficient deformation on sample surfaces with commercial Si or $Si_3N_4$ probes is difficult because of their low stiffness, a tungsten probe fabricated by electrochemical etching with appropriately high stiffness can generate relatively large elastic deformation without damaging sample surfaces. The fabrication of the tungsten probe involves two separate procedures. The first procedure involves immersing a tungsten wire with both ends bent parallel to the surface of an electrolyte and controlling the stiffness of the tungsten cantilever by decreasing its diameter using electrochemical etching in the direction of the central axis. The second procedure involves immersing the end of the etched tungsten cantilever in the direction perpendicular to the surface of the electrolyte and fabricating a tungsten tip with a tip radius of 20-50 nm via the necking phenomenon. The latter etching process applies pulse waves every 0.25 seconds to the manufactured tip to improve its yield. Finite element analysis (FEA) of the stiffness of the tungsten probe as a function of its diameter showed that the stiffness of the tungsten probes greatly varies from 56 N/m to 3501 N/m according to the cantilever diameters from $30{\mu}m$ to $100{\mu}m$, respectively. Thus, the proposed etching method is effective for producing a tungsten probe having specific stiffness for optimal use with an AFM and certain samples.

Surface Imaging of Barley Aleurone Cell by Atomic Force Microscopy

  • Kim, Tae-Wan;Huh, Kwang-Woon;Kim, Seung-Hwan;Ku, Hyun-Hwoi;Lee, Byung-Moo;Kim, Jae-Yoon;Seo, Yong-Won
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.49 no.1
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    • pp.36-40
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    • 2004
  • To observe and analysis ultra-microscopically barley aleurone cell surface, atomic force microscope (AFM) was used. Seed coat of early maturing germplasm, eam9, was dehulled and scanned by non-contact mode. We have obtained the high resolution topographic 3-dimensional image of barley aleurone layer with high resolution. These images showed the membrane proteins in barley aleurone cell. One channel protein and numerous peripheral or integral proteins were detected in a area of 100 $\mu\textrm{m}^2$. Furthermore, we found that their widths were ranged from 50 to 750nm and lengths from 0 to 66 $\mu\textrm{m}$. The thickness of aleurone layer was measured by scanning electron microscope. The thickness at early developmental stage was about 16 and then the aleurone cell enlarged upto 57 $\mu\textrm{m}$${\mu}{\textrm}{m}$ at least until 42 days after anthesis. In this study, we firstly reported on the ultrastructural AFM analysis of living aleurone cell as a biological specimen. It was clearly suggested that AFM will become an powerful tool for probing both the structural properties of biological samples.