• Title/Summary/Keyword: AC and DC Power Applications

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Low cost 2.4-GHz VCO design in 0.18-㎛ Mixed-signal CMOS Process for WSN applications (저 가격 0.18-㎛ 혼성신호 CMOS공정에 기반한 WSN용 2.4-GHz 밴드 VCO설계)

  • Jhon, Heesauk;An, Chang-Ho;Jung, Youngho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.2
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    • pp.325-328
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    • 2020
  • This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

Distance Sensing of Moving Target with Frequency Control of 2.4 GHz Doppler Radar (2.4 GHz 도플러 레이다의 주파수 조정을 통한 이동체 거리 센싱)

  • Baik, Kyung-Jin;Jang, Byung-Jun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.152-159
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    • 2019
  • In general, a Doppler radar can measure only the velocity of a moving target. To measure the distance of a moving target, it is necessary to use a frequency-modulated continuous wave or pulse radar. However, the latter are very complex in terms of both hardware as well as signal processing. Moreover, the requirement of wide bandwidth necessitates the use of millimeter-wave frequency bands of 24 GHz and 77 GHz. Recently, a new kind of Doppler radar using multitone frequency has been studied to sense the distance of moving targets in addition to their speed. In this study, we show that distance sensing of moving targets is possible by adjusting only the frequency of a 2.4 GHz Doppler radar with low cost phase lock loop. In particular, we show that distance can be sensed using only alternating current information without direct current offset information. The proposed technology satisfies the Korean local standard for low power radio equipment for moving target identification in the 2.4 GHz frequency band, and enables multiple long-range sensing and radio-frequency identification applications.

Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime

  • Yu, Eunseon;Son, Baegmo;Kam, Byungmin;Joh, Yong Sang;Park, Sangjoon;Lee, Won-Jun;Jung, Jongwan;Cho, Seongjae
    • ETRI Journal
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    • v.41 no.6
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    • pp.829-837
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    • 2019
  • The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (Lg) by examining a set of primary DC and AC parameters. The cutoff frequency (fT) and maximum oscillation frequency (fmax) of the proposed device were determined to be 440.0 and 753.9 GHz when Lg is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

Diagnostic Studies of Plasmas in Saline Solutions: the Frequency Effects and the Electrode Erosion Mechanism

  • Hsu, Cheng-Che
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.16-16
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    • 2011
  • Plasmas in saline solutions receive considerable attention in recent years. How the operating parameters influence the plasma characteristics and how the electrode erosion occurs have been topics that require further study. In the first part of this talk, the effect of the frequency on the plasmas characteristics in saline solution driven by 50~1000 Hz AC power will be presented. Two distinct modes, namely bubble and jetting modes, are identified. The bubble mode occurs under low frequencies. In this mode, one mm-sized bubble is tightly attached to the electrode tip and oscillates with the applied voltage. With an increase in the frequency, it shows the jetting mode, in which many smaller bubbles are continuous formed and jetted away from the electrode surface. Multiple mechanisms that are potentially responsible to such a change in bubble dynamics have been proposed and the dominant mechanism is identified. From the Stark broadening of the hydrogen optical emission line, electron densities in both modes are estimated. It shows clearly that the driving frequency greatly influences the bubble dynamics, which in turn alters the plasma behavior. In the second part, the study of the erosion of a tungsten electrode immersed in saline solution under conditions suitable for bio-medical applications is presented. The electrode is immersed in 0.1 M saline solution and is positively or negatively biased using a DC power source up to 600 V. It is identified that when the electrode is positively biased, erosion by the surface electrolytic oxidation is the dominant mechanism with an applied voltage below 150 V. An increase in the applied voltage leads to the formation of the plasma and the damage by the plasma and the thermal effect becomes more prominent. The formation of the gas film at the electrode surface leads to the formation of the plasma and hinders the electrolytic erosion. In the negatively-biased electrode, no electrolytic oxidation is seen and the damage is mostly likely due to the plasma erosion and the thermal effect.

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Electrochemical Characteristics of Zn and Si Ion-doped HA Films on Ti-6Al-4V by PEO Treatment

  • Lim, Sang-Gyu;Hwang, In-Jo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.199-199
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    • 2016
  • Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

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