• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of Powder Materials
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• v.6 no.1
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.396-400
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• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.1-6
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• 1986

The hydration of $C_3A$ and $C_3A-CaSO_4$.$2H_2O$ was investigated with varying concentration (0.1-1.0%) of sodium gluconate solution. gluconate solution. Sodium gluconate accelerates cation dissolution from $C_3A$ for the first several minutes but depresses the rate of heat evolution in the course of $C_3A$ hydration. The hydration of $C_3A$ in the presence of sodium gluconate was modified such that the formation of the intermediate hydrate C4AH$\chi$ crystal was much reduced and most of the product became amorphous. The retardation of $C_3A-CaSO_4$.$2H_2O$ hydration in the presence of sodium gluconate was controlled by the competitive adsorption between gluconate anion and $SO_4^{-2}$ onto $C_3A$ surface.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

• Korean Journal of Crystallography
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• v.2 no.1
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• pp.12-16
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• 1991

C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Kyungpook Mathematical Journal
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• v.48 no.4
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• pp.529-543
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• 2008

It is shown that every almost linear mapping h : $A{\rightarrow}B$ of a unital PoissonC*-algebra A to a unital Poisson C*-algebra B is a Poisson C*-algebra homomorph when $h(2^nuy)\;=\;h(2^nu)h(y)$ or $h(3^nuy)\;=\;h(3^nu)h(y)$ for all $y\;\in\;A$, all unitary elements $u\;\in\;A$ and n = 0, 1, 2,$\codts$, and that every almost linear almost multiplicative mapping h : $A{\rightarrow}B$ is a Poisson C*-algebra homomorphism when h(2x) = 2h(x) or h(3x) = 3h(x for all $x\;\in\;A$. Here the numbers 2, 3 depend on the functional equations given in the almost linear mappings or in the almost linear almost multiplicative mappings. We prove the Cauchy-Rassias stability of Poisson C*-algebra homomorphisms in unital Poisson C*-algebras, and of homomorphisms in Poisson Banach modules over a unital Poisson C*-algebra.