• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.102-105
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• 2005

The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.7
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• pp.652-657
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• 2009

Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.956-956
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• 1990

A nitrogenation of coal ash in the presence of carbon was carried out to examine the effects of reaction temperature, reaction time and carbon composition on the formation of AlN, SiC and Si3N4. Decreasing the particle size increased the formation of AlN and its maximum composition in the product was obtaiend under 1450∼1500℃, 2 hours of reaction time and about 30% of carbon addition(on the basis of sample weight). Compositions of SiC and Si3N4 were distributed to the opposite so that SiC showed a higher composition compared with Si3N4 at a lower temperature, a shorter reaction time and a greater carbon addition.

• Journal of the Korean Ceramic Society
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• v.29 no.8
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• pp.587-592
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• 1992

Sheets of SiC-SiC whisker maxed matrix were prepared from the mixed slurry of SiC whisker and SiC matrix by the rolling method. With the increase of SiC whisker, the pore size, the porosity and the phosphoric acid absorbency of the matrix were increased, while the bubble pressure was decreased. The activation energy for the transfer of H+ ion was decreased with the increase of mixing ratio of SiC whisker to the SiC matrix from the measurement of hydrogen ion conductivity. The activation energy was evaluated as 0.25 eV when the mixing ratio of SiC whisker to the SiC matrix was 1 : 2 and the activation energy was 0.16 eV for the 2 : 1 matrix. It means that SiC whisker matrix contributes to attain a better microstructure for the diffusion of hydrogen ion. From the measurement of single cell performance of matrix with various mixing ratio, it is concluded that if SiC-SiC whisker maxed matrix has a sufficient bubble pressure to prevent the crossover of H2 gas, the current density of a fuel cell is increased with the increase of acid absorbency of the matrix. Current density was improved from 140 mA/$\textrm{cm}^2$ for 0.25 mm thickness of matrix to 170 mA/$\textrm{cm}^2$ for the 0.20 mm one at 700 mV.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.150-150
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• 2010

비휘발성 메모리의 구조는 ONO($SiO_2$, $SiN_X$, $SiN_XN_Y$), 혹은 NNO($SiN_X$, $SiN_X$, $SiN_XN_Y$)등으로 구성된 blocking layer, charge storage layer, tunneling layer 등이 일반적이다. 본 연구에서 제작된 OSO구조는charge storage layer를 a-Si을 사용한 것으로, 기존에 사용되던 charge storage layer인 $SiN_x$ 대신에 a-Si:H 를 사용하였다. 최적의 전하 저장층 조건을 알기 위하여 가스비에 따른 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 전하 저장량 및 flatband 전압의 shift 값을 측정 및 분석하였다. 실험 결과, bandgap이 작아 band edge 저장 가능하며, SiNx 와 마찬가지로 a-Si:H 내 트랩에 저장이 가능하였다. 또한 $SiO_2$/a-Si:H와 a-Si:H/SiOxNy 계면의 결함 사이트에 전하의 저장되며, bandgap이 작아 트랩 또는 band edge에 위치한 전하들이 높은 bandgap을 가지는 blocking 또는 tunneling layer를 통하여 빠져 나오기 어려운 특성이 있었다. 본 연구에서는 최적의 전하 저장 층 조건을 알기 위하여 가스비에 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 flatband 전압의 shift 값을 측정하여 결과를 논의하였다. 또한 OSO 구조의 두께에 있어 MIS 결과와 poly-Si 상에 실제 제작된 NVM 소자의 switching 특성을 논의하였다.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.2
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• pp.149-155
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• 2017

Mechanical properties of carbon coated $SiC_f/SiC$ composites have been investigated, in conjunction with a detailed analysis of microstructure. Especially, the fracture behavior of $SiC_f/SiC$ composites by the induction of carbon coating layers has been examined. The matrix region of $SiC_f/SiC$ composites with ultra-fine SiC powders were consolidated by a liquid phase sintering (LPS) process, using a sintering additive of $Al_2O_3-Y_2O_3$ powder compound. In this composite, plain and satin- woven Tyranno SA fabrics were also utilized as a reinforcing material. A carbon interfacial layer was coated around satin-woven SiC fabrics. The characterization of LPS-$SiC_f/SiC$ composites was investigated by means of SEM and three point bending test.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.3 s.234
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• pp.425-431
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• 2005

The efficiency of complex slurry preparation route for developing the high performance SiC matrix of $RS-SiC_{f}/SiC$ composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of molten silicon were prepared with various C/SiC complex slurries, which associated with both the sizes of starting SiC particles and the blending conditions of starting SiC and C particles. The characterization of Rs-SiC materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the process optimization is also discussed. The flexural strength of Rs-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.51-57
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• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.