• Special Issue of the Society of Naval Architects of Korea
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• 2005.06a
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• pp.144-150
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• 2005

The size of ship is being larger than the past in the shipping industry thanks to the increased quantity of goods transported by ship. Therefore, HHIC (Hanjin Heavy industries & Construction co., LTD) invented innovative construction method, so called 'DAM', to build a ship which is longer than the length of the HHIC's dry dock. On Erection at the sea by the application of DAM Method, Squeezing & Detachment of A/F film may occur as a result of the wave and the constriction between A/F film pre-applied on the side shell and DAM's Rubber Packing. Thus, the test for finding the minimum curing time of A/F film was performed to protect Squeezing & Detachment of A/F film on the hull. To verify the soundness of paint and to find the optimum condition during the erection period of the DAM, laboratory test was carried out under no immersion condition through the application of various coatings on the Rubber Packing. And two methods were selected from the results of laboratory test for actual MOCK-UP Test. In addition, the test for the film profile per temperature of silicone A/F coat and the film Squeezing was performed.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.275-277
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• 2007

유리를 기판으로 하는 superstrate pin 비정질 태양전지에서 전면투명전도막(TCO)과 p-layer의 계면이 태양전지의 효율을 내는데 가장 큰 기여를 한다. 전면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$ 보다 전기,광학적으로 우수하고, 안개율(Haze)높으며, 수소 플라즈마에서의 안정성이 높은 특정을 갖고 있다. 그래서 박막 태양전지 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2:F$보다 충진율(Fill factor:F.F)과 V_{\infty}$ 가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$의 F.F가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer 에 R={$H_2/SiH_4$}=25로 변화, p ${\mu$}c$-Si:H/p a-SiC:H 로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu$}c$-Si:H/p a-SiC:H 로 p-layer 이중 증착에서 Voc는 0.95V F.F는 70% 이상이 나왔다. 이들 각 p층의 $E_a$(Activation Energy)를 구해본 결과, ${\mu$}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

• New & Renewable Energy
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• v.3 no.4
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• pp.63-68
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• 2007

유리를 기판으로 하는 superstrate pin 비정질 실리콘 태양전진에서 전면 투명전도막(TCO)과 p-층의 계면은 태양전지 변환효율에 큰 영향을 미친다. 면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$보다 전기, 광학적으로 우수하고, 안개율 (Haze)높으며, 수소 플라즈마에서 안정성이 높은 특징을 갖고 있다. 그래서 박막 태양전지의 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2$보다 충진율(Fill Factor:F.F)과 $V_{oc}$가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$dml F.F.가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer에 $R=(H_2/SiH_4)=25$로 변화, p ${\mu}c$-Si:H/p a-SiC:H로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu}c$-Si:H/p a-SiC:H 인 p-layer 이중 증착에서 $V_{oc}$는 0.95V F.F는 70%이상이 나왔다. 이들 각 p층의 $E_a$(Activiation Energy)를 구해본 결과, ${\mu}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.32-32
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• 2009

실리콘 박막 태양전지에서 전면 투명전도막(TCO)은 태양전지의 전기, 광학적 특성을 결정하는 중요한 기능을 한다. ZnO:Al TCO는 기존에 사용되던 $SnO_2:F$와는 비정질 실리콘(a-Si:H) 박막 태양전지의 윈도우 층으로 사용되는 p a-SiC:H와의 일함수(work function) 차이로 인해 접촉전위(contact barrier)를 형성하게 되며 이로 인해 태양전지의 충진율(fill factor)이 $SnO_2:F$에 비해 감소하는 단점을 보인다. 본 연구에서는 ZnO:Al/p a-SiC:H 계면의 접촉전위 발생원인 및 태양전지 충진율 감소현상에 관한 정확한 원인규명을 위해 다양한 특성을 갖는 버퍼층을 삽입하여 계면특성 및 태양전지의 동작특성을 분석하고자 한다.

• Journal of the Korea Institute of Building Construction
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• v.23 no.1
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• pp.1-9
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• 2023

This study is to analyze the cause of the defects in polyurethane waterproofing, a material commonly used on the roof of buildings, and to determine if it has a relation with the curing conditions of humidity and temperature and the moisture content of the base structure. As a result, it was confirmed that the waterproofing coating did not adhere when the moisture content of the base plate was 10% or more. When the temperature and humidity conditions were 20℃ and 80%RH, none of the properties deteriorate but when the temperature was 40℃, 60%RH, air bubbles were formed on the surface, and at 40℃ and 80%RH, the basic properties of the dry coating film were less than the KS F 3211 performance standard.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2013.05a
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• pp.329-331
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• 2013

The salt damage resistance of waterproofing membrane was evaluated on the cracked mortar substrate. The types of specimens are urethane, acrylic waterproofing membrane, and no coating mortar substrate. After these specimens were cured by water curing for 4 weeks, they were cured by atmospheric curing at 20±2Co for 8 weeks. The salt water immersion test was carried out by following KS F 2737, and the penetration depth of chloride ion into substrate was measured in 1, 4, 8, and 13 weeks. As a result, in the case of non coating specimen, the chloride ion penetrated within one week. In the coated specimens, a regardless of the membrane type, the chloride ion did not penetrate during 13 weeks-tests on condition that the cracked width of substrate is less than 0.3mm. Also, the penetration speeds of the coated specimens were lower than that of non coating specimen. Therefore, our results reached a conclusion that waterproofing membrane has high salt damage resistance.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.376-381
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• 2007

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{\circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{\times}10^{-4}{\Omega}\;cm$, the highest carrier concentration of $2.404{\times}10^{21}/cm^3$, and about $8\;cm^2/V{\cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.