• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.276-279
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• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• Journal of Periodontal and Implant Science
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• v.54 no.1
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• pp.13-24
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• 2024

Purpose: This study investigated the adjunctive effect of light-emitting diodes (LEDs) in the treatment of experimental periodontitis. Methods: Experimental periodontitis was induced by placing ligatures around the mandibular second, third, and fourth premolars of 6 beagles for 3 months. After ligature removal, periodontitis progressed spontaneously for 2 months. The animals' hemimandibles were allocated among the following 3 groups: 1) no treatment (control), 2) scaling and root planing (SRP), and 3) SRP with LED irradiation at 470-nm and 630-nm wavelengths (SRP/LED). The probing pocket depth (PPD) and gingival recession (GR) were measured at baseline, 6 weeks, and 12 weeks. The clinical attachment level (CAL) was calculated. After 12 weeks, histological and histomorphometric assessments were performed. The distances from the gingival margin to the apical extent of the junctional epithelium (E) and to the connective tissue (CT) attachment were measured, as was the total length of soft tissue (ST). Results: PPD and CAL increased at 12 weeks compared with baseline in the control group (6.31±0.43 mm to 6.93±0.50 mm, and 6.46±0.60 mm to 7.61±0.78 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP group (6.01±0.59 to 4.81±0.65 mm, and 6.51±0.98 to 5.39±0.93 mm, respectively). PPD and CAL decreased at 12 weeks compared with baseline in the SRP/LED group (6.03±0.39 to 4.46±0.47 mm, and 6.11±0.47 to 4.78±0.57 mm, respectively). The E/ST and CT/ST ratios significantly differed among the 3 groups (P<0.05). The clinical parameters and histologic findings demonstrated that 470-nm and 630-nm wavelength LED irradiation accompanying SRP could improve treatment results. Conclusions: Within the study limitations, 470 nm and 630 nm wavelength LED irradiation might provide additional benefits for periodontitis treatment.

• Korean Journal of Poultry Science
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• v.19 no.1
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• pp.35-45
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• 1992

This study was carried out to investigate the effect of different dose of 312nm UV irradiation on ash and phosphorus contents in metatarsus of broiler chicks, whose dorsal skins were exposed to the UV light. Day old Hubbard line broiler chicks were fed with vitamin D deficient diet for 3 weeks and the defeathered dorsal skins were exposed to different dise (0.32, 0.65, or 0.98 J/$\textrm{cm}^2$) of 312nm UV light. The metatarsus bones were collected on 0, 1, 2, 3, 4 or 5 days after irradiation and defatted, dried, ashed and dissolved in 6N-HCI. The P concentrations were determined by spectrophotometry. When the 0.32 J/$\textrm{cm}^2$ dose was applied, the ash contents in metatarsus bones o( chicks were 42, 46 and 40% on 0, 1 and 3 days after irradiation, respectively. The maximum level, 46% was appeared at 2 days after exposure as 0.65 J/$\textrm{cm}^2$ was treated. When 0.98 J/$\textrm{cm}^2$ irradiation was applied, the high concentrations, 47 and 47% were shown on 1 and 2 days after irradiation, respectively. The 0.98 J/$\textrm{cm}^2$ among three levels of dose increased the most amount of ash in metatarsus bone. In respect to the P content in the chick bone the increased level, 19.4% was shown on 3 days after UV treatment with 0.32 J/$\textrm{cm}^2$. The maximum levels, 18.1 and 20.0% were present on 3 and 2 days after exposure to the 0.65 and 0.98 J/$\textrm{cm}^2$ of UV dose, respectively. It was shown that the higher dose of UV irradiation increased the more P concentration in matatarsus of chicks and the production rate was faster than those from 0.32 and 0.65 J/$\textrm{cm}^2$ treatments.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.65-68
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.505-509
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• 2013

A low temperature ($65^{\circ}C$) thermal deposition process was developed for depositing a silver coating on thermally sensitive polymeric substrates. This low temperature deposition was achieved by chemical reduction of a silver alkylcarbamate complex with latent reducing agent. The effects of acetol as a latent reducing agent for the silver 2-ethylhexylcarbamate (Ag-EHCB) complex and their blend solutions were investigated in terms of reducing mechanism, and the size and shape of silver nanoparticles (Ag-NPs) as a function of reduced temperature and time, and PVP stabilizer concentration were determined. Low temperature deposition was achieved by combining chemical reduction with thermal heating at $65^{\circ}C$. A range of polymer film, sheet and molding product was coated with silver at thicknesses of 100 nm. The effect of process parameters and heat treatment on the properties of silver coatings was investigated.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.125-128
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• 2009

LED칩 (발광 피크: 405nm)과 4 종의 형광체 (Blue, Green, OrangeRed, Red)를 이용하여 D65 표준광원r과 유사한 발광 스펙트럼을 가지는 광원을 제작하였다. 실험계획법을 활용하여 형광체간에 교호작용과 농도 변화에 따른 스펙트럼의 형상 변화 경향을 파악할 수 있었으며, 이들 결과를 실험계획법에 의해 최적화함으로서 D65 표준광원과 유사한 스펙트럼을 가지는 광원을 제작할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.65-65
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• 2010

pn 접합 소자는 반도체 소자의 매우 중요한 기본 구조이다. 최근 들어 나노선과 반도체 기판으로 구성된 pn 접합소자에 대한 연구가 활발히 진행되고 있으나, 나노선을 이용한 대부분의 접합소자는 나노선을 분산하여 소자를 제작하기 때문에 어레이 구조의 소자를 만들기에는 어려움이 있다. 본 연구에서는 성장된 나노선을 슬라이딩 전이하는 방법으로 정렬된 n-$SnO_2$ 나노선과 도핑이 된 p-Si 기판으로 이루어진 pn 접합 소자 어레이 구조를 제작하였다. 제작된 소자의 전류-전압 측정을 통해 정류 (rectification) 작용을 확인하였고 rectification ratio은 수천~수만으로 측정되었다. 소자에 UV (254nm) 빛을 조사하여 광전류의 증가를 확인할 수 있었다. 또한 소자에 15V이상의 전압을 걸어주면 접합 부분에서 EL(electroluminescence) 효과인 발광을 확인 할 수 있었다. 이처럼 나노선과 기판으로 구성된 pn 접합 소자는 다이오드, 태양전지 뿐 아니라 레이저와 LED등으로도 응용될 것으로 예상된다.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of Energy Engineering
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• v.12 no.1
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• pp.49-57
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• 2003

Approx. 200.000 bpd vacuum residue oil is produced from oil refineries in Korea, and is supplied to use asphalt, high sulfur fuel oil and for upgrading at the residue hydro-desulfurization unit. Vacuum residue oil has high energy content, however its high sulfur content and high concentration of heavy metals represent improper low grade fuel. To meet growing demand for effective utilization of vacuum residue oil from refineries, recently some of the oil refinery industries in Korea, such as SK oil refinery and LG Caltex refinery, have already proceeded feasibility study to construct 435~500 MWe IGCC power plant and hydrogen production facilities. Recently, KIER (Korea Institute of Energy Research) are studying on the Vacuum Residue gasification process using an oxygen-blown entrained-flow gasifier. The experiment runs were evaluated under the reaction temperature: 1.100~l,25$0^{\circ}C$, reaction pressure: 1~6 kg/$\textrm{cm}^2$G, oxygen/V.R ratio: 0.8~0.9 and steam/V.R ratio: 0.4~0.5. Experimental results show the syngas composition (CO+H$_2$): 85~93%, syngas flow rate: 50~l10 Nm$^3$/hr, heating value: 2,300~3,000 k㎈/Nm$^3$, carbon conversion: 65~92, cold gas efficiency: 60~70%. Also equilibrium modeling was used to predict the vacuum residue gasification process and the predicted values were compared reasonably well with experimental data.