• Title/Summary/Keyword: 65 nm

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Diameter Effect of Silver Nanorod Arrays to Surface-enhanced Raman Scattering

  • Gu, Geun Hoi;Kim, Min Young;Yoon, Hyeok Jin;Suh, Jung Sang
    • Bulletin of the Korean Chemical Society
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    • v.35 no.3
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    • pp.725-730
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    • 2014
  • The effect the diameter of silver nanorod arrays whose distance between the nanorods was uniform at 65 nm have on Surface-enhanced Raman Scattering (SERS) has been studied by varying the diameter from 28 to 51 nm. Nanorod length was fixed at approximately 62 nm, which is the optimum length for SERS by excitation with a 632.8 nm laser line. The transverse and longitudinal modes of the surface plasmon of these silver nanorods were near 400 and 630 nm, respectively. The extinction of the longitudinal mode increased with increasing nanorod diameter, while the transverse mode did not change significantly. High-quality SERS spectra of p-aminothiophenol and benzenethiol adsorbed on the tips of the silver nanorods were observed by excitation with a 632.8 nm laser line. The SERS enhancement increased with increasing nanorod diameter. We concluded that the SERS enhancement increases when the diameter of silver nanorods is increased mainly by increasing the excitation efficiency of the longitudinal mode. The enhancement factor for the silver nanorods with a 51 nm diameter was approximately $2{\times}10^7$.

Enhanced Absorption Efficiency of Solar Cells Using Guided-mode Resonance (도파모드 공진을 이용한 태양전지의 흡수효율 증대)

  • Kim, Doo-Sung;Kim, Sang-In;Lee, Jae-Jin;Lim, Han-Jo
    • Korean Journal of Optics and Photonics
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    • v.21 no.1
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    • pp.1-5
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    • 2010
  • In this study, we propose a grating structure using guided-mode resonance (GMR) to increase the absorption efficiency of a silicon solar cell. The proposed solar cell design consists of a one-dimensional diffraction grating and a planar waveguide layer of poly-silicon deposited on a silver reflector. We investigate the influence of structure parameters such as grating period, waveguide thickness, grating width and grating depth. Optimal parameters are found using the particle swarm optimization (PSO) algorithm. In the optimized GMR-assisted solar cell, absorption efficiency up to 65.8% is achieved in the wavelength range of 300 nm~750 nm.

Patterning self-assembled pentacene nanolayer by EUV-induced 3-dimensional polymerization

  • Hwang, Han-Na;Han, Jin-Hui;Im, Jun;Sin, Hyeon-Jun;Kim, Yeong-Deuk;Hwang, Chan-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.65-65
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    • 2010
  • Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.

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Electrochromic Performance of NiOx Thin Film on Flexible PET/ITO Prepared by Nanocrystallite-Dispersion Sol

  • Kwak, Jun Young;Jung, Young Hee;Park, Juyun;Kang, Yong-Chul;Kim, Yeong Il
    • Journal of the Korean Chemical Society
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    • v.65 no.2
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    • pp.125-132
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    • 2021
  • An electrochromic nickel oxide thin film was fabricated on a flexible PET/ITO substrate using a nanocrystallite- dispersed coating sol and bar coater. Nanocrystalline NiOx of 3-4 nm crystallite size was first synthesized by base precipitation and thermal conversion. This NiOx nanocrystallite powder was mechanically dispersed in an alcoholic solvent mixed with a silane binder to prepare a coating sol for thin film. This sol method is different from the normal sol-gel method in that it does not require the conversion of precursor by heat treatment. Therefore, this method provides a very facile method to prepare NiOx thin films on any kind of substrate and it can be easily applied to mass production. The electrochromic performance of this NiOx thin film on PET/ITO electrode with a thickness of about 400 nm was investigated in a nonaqueous LiClO4 electrolyte solution by cyclic voltammetric and repeated chronoamperometric measurements in conjunction with spectrophotometry. The visible light modulation of 44% and the colorization efficiency of 41 ㎠/C at 550 nm were obtained at the step potentials of -0.8/+1.2 V vs Ag and a duration of 30 s.

이온빔 식각을 통한 저마찰용 표면 구조 제어 연구

  • Lee, Seung-Hun;Yun, Seong-Hwan;Choe, Min-Gi;Gwon, Jeong-Dae;Kim, Do-Geun;Kim, Jong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.370-370
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    • 2010
  • 최근 자연모사를 통한 초저마찰 연구가 활발히 진행되고 있으며 리소그라피, 레이져 가공법 등의 다양한 방법을 통해 표면구조 제어가 시도되고 있다. 본 연구에서는 자장여과 아크 플라즈마 이온 소스를 이용한 WC-Co 및 SCM 415 금속소재의 표면구조 형상제어를 통해 저마찰 특성을 시도하였다. 자장여과 아크 소스는 90도 꺽힘형이며 5개의 자장 코일을 통해 아크 음극에서 발생된 고밀도($10^{13}\;cm^{-3}$ 이상) 플라즈마를 표면처리 대상 기판까지 확산시켰다. 공정 압력은 알곤가스 1 mTorr, 아크 방전 전류는 25 A, 플라즈마 수송 덕트 전압은 10 V이다. 기판 전압은 비대칭 펄스 (-80 %/+5 %)로 -600 V에서 -800 V까지 인가되었으며 -600 V 비대칭 펄스 인가시기판으로 입사하는 알곤 이온 전류 밀도는 약 $4.5\;mA/cm^2$ 이다. WC-Co 시편의 경우 -600 V 전압 인가시, 이온빔 처리 전 46.4 nm(${\pm}12.7\;nm$)의 조도를 갖는 시편이 5분, 10분, 20분동안 이온빔 처리함에 따라 72.8 nm(${\pm}3\;nm$), 108.2 nm(${\pm}5.9\;nm$), 257.8 nm(${\pm}24.4\;nm$)의 조도를 나타내었다. SCM415 시편의 경우 -800 V 인가시, 이온빔 처리 전 20.4 nm(${\pm}2.9\;nm$)의 조도를 갖는 시편이 20분동안 이온빔 처리함에 따라 275.1 nm(${\pm}43\;nm$)의 조도를 나타내었다. 또한 주사전자현미경을 통한 표면 형상 관찰 결과, 이온빔 식각을 통해 생성된 거친 표면에 $3-5\;{\mu}m$ 직경의 돌기들이 산발적으로 생성됨을 확인했다. 마찰계수 측정 결과 SCM415 시편의 경우, 이온빔 처리전 마찰계수 0.65에서 조도 275.1 nm 시편의 경우 0.48로 감소하였다. 본 연구를 통해 이온빔 식각을 이용한 금속표면 제어 및 저마찰 특성 향상의 가능성을 확인하였다.

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Effects of Precursor Concentration on the Growth of ZnO Nanorods (ZnO 나노로드 성장에 미치는 전구체 농도의 영향)

  • Ma, Tae-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.11
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    • pp.1835-1839
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    • 2016
  • In this study, ZnO nanorods were grown by a hydrothermal method. $SiO_2/Si$ wafers and glass were used as substrates. ~20 nm-thick ZnO thin films were rf magnetron sputtered for seed layers. The precursor was prepared by mixing zinc nitrate hexahydrate and hexamethylenetetramine (hexamine) in DI water. The concentration of zinc nitrate hexahydrate was fixed at 0.05 mol, and that of hexamine was varied between 0 mol to 0.1 mol. The reactor containing substrates and precursor was put in an oven maintained at $90^{\circ}C$ for 1 h. X-ray diffraction was carried out to analyze the crystallinity of ZnO nanorods, and a field emission scanning electron microscope was employed to observe the morphology of nanorods. Transmittance and absorbance were measured by a UV-Vis spectrophotometer. Photoluminescence measurements were conducted using 266 nm light.

A stable U-band VCO in 65 nm CMOS with -0.11 dBm high output power

  • Lee, Jongsuk;Moon, Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.437-444
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    • 2015
  • A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.

A Design of 8.5 GHz META-VCO based-on Meta-material using 65 nm CMOS Process

  • Lee, Jongsuk;Moon, Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.535-541
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    • 2016
  • A low phase noise META-VCO based-on meta-structure was designed using 65 nm CMOS process. We used a meta-structure to get good phase noise characteristics. The measured phase noises are -67.8 dBc/Hz, -96.37 dBc/Hz, and -107.37 dBc/Hz at 100 kHz, 1 MHz, and 10 MHz offset respectively. The META-VCO operates 8.45~8.77 GHz according to VCTRL, and the output power is -19.12 dBm. The power consumption is 28 mW with 1.2-V supply voltage. The calculated FOM is -140.76 dBc/Hz.

The Characteristic of Prepared Electrode Catalyst and MEA using CNF and CNT (CNT 및 CNF를 이용하여 제조된 전극 촉매 및 막 전극 접합체의 특성)

  • 임재욱;최대규;류호진
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.59-64
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    • 2004
  • The performance of fuel cell electrode depends on the characteristics of the catalyst support material. This paper deals with the use of CNF(carbon nanofibre) and CNT(carbon nanotube) as platinum catalyst support. The CNF and CNT were synthesized with catalyst treated by mechanochemical process and were prepared by chemical vapor deposition (CVD) method. The platinum supported on CNF and CNT for polymer electrolyte membrane fuel cell (PEMFC) application. In result, the best I-V characteristic was verified by the prepared MEA(membrane electrode assembly) from twisted CNF that had a diameter of 65 nm.

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A Single-ended Simultaneous Bidirectional Transceiver in 65-nm CMOS Technology

  • Jeon, Min-Ki;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.817-824
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    • 2016
  • A simultaneous bidirectional transceiver over a single wire has been developed in a 65 nm CMOS technology for a command and control bus. The echo signals of the simultaneous bidirectional link are cancelled by controlling the decision level of receiver comparators without power-hungry operational amplifier (op-amp) based circuits. With the clock information embedded in the rising edges of the signals sent from the source side to the sink side, the data is recovered by an open-loop digital circuit with 20 times blind oversampling. The data rate of the simultaneous bidirectional transceiver in each direction is 75 Mbps and therefore the overall signaling bandwidth is 150 Mbps. The measured energy efficiency of the transceiver is 56.7 pJ/b and the bit-error-rate (BER) is less than $10^{-12}$ with $2^7-1$ pseudo-random binary sequence (PRBS) pattern for both signaling directions.