• Title/Summary/Keyword: 60GHz radar

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Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

  • Misra, Prasanna Kumar;Qureshi, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.274-283
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    • 2014
  • In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

A Study on the 8W High Power Amplifier for VSAT at Ku-band (Ku-band의 소형 지구국용을 위한 8W 고출력 증폭기에 관한 연구)

  • 조창환;이찬주;홍의석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.7 no.1
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    • pp.53-60
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    • 1996
  • The 8W hybrid MIC SSPA has been developed in the frequency range from 14.0 GHz to 14.5 GHz for uplink of KOREASAT's earth station. The whole system was designed of two parts with driving amplifier and high power amplifier to simplify the fabrication process. we reduced weight and volum of power amplifier through arranging the bias circuits in the same housing. The realized SSPA has a small signal gain of $26\pm1dB$within 500 MHz bandwidith, and the input and output return losses are over 7dB and 12dB respectively. The output power of 39.0 ~ 39.2dBm is achieved at the 1dB gain compression point of 14 GHz, 14.25 GHz, and 14.5 GHz. That reveals higher power than 8W of design target. The proposed SSPA manufacture techni- ques in this paper can be applied to the implementation of power amplifiers for some radars and SCPC.

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A Design of High Power Pulsed Solid State Power Amplifier for S-Band RADAR System Using GaN HEMT (GaN HEMT를 이용한 S-대역 레이더시스템용 고출력 펄스 SSPA 설계)

  • Kim, Ki-Won;Kwack, Ju-Young;Cho, Sam-Uel
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.168-171
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    • 2010
  • 본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

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Design of X-Band High Efficiency 60 W SSPA Module with Pulse Width Variation (펄스 폭 가변을 이용한 X-대역 고효율 60 W 전력 증폭 모듈 설계)

  • Kim, Min-Soo;Koo, Ryung-Seo;Rhee, Young-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.9
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    • pp.1079-1086
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    • 2012
  • In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

High Efficiency Active Phased Array Antenna Based on Substrate Integrated Waveguide (기판집적 도파관(SIW)을 기반으로 하는 고효율 능동 위상 배열안테나)

  • Lee, Hai-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.3
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    • pp.227-247
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    • 2015
  • An X-band $8{\times}16$ dual-polarized active phased array antenna system has been implemented based on the substrate integrated waveguide(SIW) technology having low propagation loss, complete EM shielding, and high power handling characteristics. Compared with the microstrip case, 1 dB less is the measured insertion loss(0.65 dB) of the 16-way SIW power distribution network and doubled(3 dB improved) is the measured radiation efficiency(73 %) of the SIW sub-array($1{\times}16$) antenna element. These significant improvements of the power division loss and the radiation efficiency using the SIW, save more than 30 % of the total power consumption, in the active phased array antenna systems, through substantial reduction of the maximum output power(P1 dB) of the high power amplifiers. Using the X-band $8{\times}16$ dual-polarized active phased array antenna system fabricated by the SIW technology, the main radiation beam has been steered by 0, 5, 9, and 18 degrees in the accuracy of 2 degree maximum deviation by simply generating the theoretical control vectors. Performing thermal cycle and vacuum tests, we have found that the SIW array antenna system be eligible for the space environment qualification. We expect that the high efficiency SIW array antenna system be very effective for high performance radar systems, massive MIMO for 5G mobile systems, and various millimeter-wave systems(60 GHz WPAN, 77 GHz automotive radars, high speed digital transmission systems).

Radar Backscattering Measurements of Paddy Rice Field using L, C, and X-band Polarimetric Scatterometer

  • Kim, Yi-Hyun;Hong, Suk-Young;Park, Ji-Sung;Lee, Eun-Sun;Lee, Hoon-Yol
    • Proceedings of the KSRS Conference
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    • 2007.10a
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    • pp.633-636
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    • 2007
  • The objective of this study is to measure backscattering coefficients of paddy rice using L, C, X-bands scatterometer system during a rice growth period. The measurement was conducted at an experimental field located in National Institute of Agricultural Science and Technology (NIAST), Suwon, Korea. The rice cultivar was a kind of Japonica type, called Chuchung. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer (20MHz ${\sim}$ 20GHz), RF cables, and a personal computer that controls frequency, polarization and data storage. The scatterometer system is calibrated using a calibration kit (3.5mm, 85052D). The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ for four polarization (HR, VV, HV, VH), respectively, and compared with rice growth data such as plant height, stem number, biomass, dry weight and LAI that were collected at time of each scatterometer measurement simultaneously.

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Millimeter-wave Fast-sweep FM Reflectometry Applied to Plasma Density Profile Measurements

  • Kang, Wook-Kim
    • Journal of electromagnetic engineering and science
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    • v.1 no.1
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    • pp.18-23
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    • 2001
  • A fast-sweep broadband FM reflectometer system has been successfully developed and operacted at the DIII-D tokamak, producing reliable density Profiles with excellent spatial (1 $\leq$ cm) and temporal resolution (~100 $\mu$ s). The system uses a solid-state microwave oscillator and an active quadrupler, covering full Q-band frequencies (33~50 GHz) and providing relatively high output power (20~60 mW). The system hardware allows fu11band frequency sweep in 10 $\mu$ s, but due to digitization rate limit on DIII-D, sweep time was limited to 75~100 $\mu$ s. Fast frequency sweep has helped to reduce density fluctuation effects on the reflectometer phase measurements, thus improving reliability for individual sweeps. The fast-sweep system with high spatial and temporal resolution has allowed to measure fast-changing edge density profiles during plasma ELMS and L-H transitions, thus enabling fast-time sca1e physics studies.

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Estimation of Paddy Rice Growth Parameters Using L, C, X-bands Polarimetric Scatterometer (L, C, X-밴드 다편파 레이더 산란계를 이용한 논 벼 생육인자 추정)

  • Kim, Yi-Hyun;Hong, Suk-Young;Lee, Hoon-Yol
    • Korean Journal of Remote Sensing
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    • v.25 no.1
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    • pp.31-44
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    • 2009
  • The objective of this study was to measure backscattering coefficients of paddy rice using a L-, C-, and X-band scatterometer system with full polarization and various angles during the rice growth period and to relate backscattering coefficients to rice growth parameters. Radar backscattering measurements of paddy rice field using multifrequency (L, C, and X) and full polarization were conducted at an experimental field located in National Academy of Agricultural Science (NAAS), Suwon, Korea. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer ($20\;MHz{\sim}20\;GHz$), RF cables, and a personal computer that controls frequency, polarization and data storage. The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ with $5^{\circ}$ interval for four polarization (HH, VV, HV, VH), respectively. We measured the temporal variations of backscattering coefficients of the rice crop at L-, C-, X-band during a rice growth period. In three bands, VV-polarized backscattering coefficients were higher than hh-polarized backscattering coefficients during rooting stage (mid-June) and HH-polarized backscattering coefficients were higher than VV-, HV/VH-polarized backscattering coefficients after panicle initiation stage (mid-July). Cross polarized backscattering coefficients in X-band increased towards the heading stage (mid-Aug) and thereafter saturated, again increased near the harvesting season. Backscattering coefficients of range at X-band were lower than that of L-, C-band. HH-, VV-polarized ${\sigma}^{\circ}$ steadily increased toward panicle initiation stage and thereafter decreased, and again increased near the harvesting season. We plotted the relationship between backscattering coefficients with L-, C-, X-band and rice growth parameters. Biomass was correlated with L-band hh-polarization at a large incident angle. LAI (Leaf Area Index) was highly correlated with C-band HH- and cross-polarizations. Grain weight was correlated with backscattering coefficients of X-band VV-polarization at a large incidence angle. X-band was sensitive to grain maturity during the post heading stage.