• Korean Journal of Food Science and Technology
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• v.29 no.5
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• pp.827-838
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• 1997

Optimal substrates and reaction conditions were studied to develop boiled or roasted meat flavor by Maillard reaction under a model system. Sugars for the reactions were xylose, ribose, glucose, lactose, maltose, and sucrose. Amino acids were cystine, cysteine, methionine, lysine, and glycine as the reaction substrates. The reacted solutions were measured their absorbances at 278 nm and 420 nm and were evaluated their sensory properties. Except cysteine, the pentose mixtures with all of the four amino acids showed a faster reaction rate than those mixtures with hexose or disaccharides. pH was decreased rapidly until 8 hours and then changed a little thereafter. Sensory evaluation showed that cystine-lactose or cystine-xylose from single substrate and cystine-lactose-maltose, and cystine-lactose-xylose from mixed substrates reacted at $100^{\circ}C$ for 16 or 20 hours were found to be close to boiled or roasted meat flavor. The volatile compounds from the four selected sugar-amino acid solutions by GC/MS were 8 hydrocarbons, 10 aldehydes, 6 ketones, 7 alcohols, 2 aromatics (benzene), 1 ester, 4 furans, 1 base and 5 sulfur compounds.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.369-374
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• 2008

A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.48-51
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• 1997

A quantum well electroabsorption waveguide modulator utilizing a field-induced refractive index change was designed and fabricated. The on/off ratios of the device were investigated as a function of wavelength over the spectral range of 850 nm to 910 nm for the various reverse biases. The field-induced refractive index variations associated with quantum-confined Stark effect was theoretically obtained based on the measured on/off ratios. The resulting maximum refractive index change(${\DELTA}n) of ~7.5 {\times} 10^{-4}$ at -8 V was estimated.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

• Analytical Science and Technology
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• v.13 no.5
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• pp.675-682
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• 2000

The concentration of dioxins from flue gases of municipal waste incineration facilities with capacities over 50 tons/day are regulated by the guideline: $0.1ng-TEQ/Nm^3$ for new facilities, and $0.5ng-TEQ/Nm^3$ for existing facilities and it will be strengthened to $0.1ng-TEQ/Nm^3$ until 2003 year. Dioxins from these incineration facilities have to be measured more than 2 times annually by the Official Test Facilities of Dioxins. Seven institutions have been certified so far as the Official Test Facilities of Dioxins. These facilities have to be evaluated by the quality control program provided by National Institute of Environmental Research every year. We reported the results of quality control test performed in 1999. Four institutions certified in 1998 sampled flue gases at stack of M incineration facilitiy and analyzed dioxins by Official Methods of Air Pollution. The isokinetic coefficients, the parameter for evaluation of sampling ability were excellent for all four institutions. They were 100.9%, 102.4%, 102.1% and 99.2%, respectively. The criteria required are as follows; resolution over 10,000, mass calibration within ${\pm}5ppm$, ion abundance ratio within 15%, and the recovery of 50-120%. As results, those institutions also met these parameters of Official Method of Air Pollution.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.678-684
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• 2013

This paper describes a low-power baseband circuit for SAW-less LTE-Advanced transmitters. The proposed transmitter baseband circuit consists of a 2nd-order Tow-Thomas type active RC-LPF and a 1st-order passive RC LPF. It can provide a 7 multi-channel cut-off frequencies and wide gain control range of -41 dB ~ 0 dB with a 1-dB step. The proposed 2nd-order active RC-LPF adopts an op-amp in which three other sub-op amps are in parallel connected to reduce DC current for different cutoff frequency. In addition, each sub-op amp adopts both Miller and feed-forward phase compensation method to achieve an UGBW of more than 1-GHz with a small DC power consumption. The proposed baseband circuit is implemented in 65-nm CMOS technology, consuming DC power from 6.3 mW to 24.1 mW from a 1.2V supply voltage for each different cut-off frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• Clean Technology
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• v.13 no.3
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• pp.180-187
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• 2007

The indium tin oxide(ITO) film on PET was prepared by a wet coating method to obtain the transparent film with a high conductance. ITO nano-particles was synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2\;nm$ and $4{\times}10^4\;{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. The ITO film was obtained by solution including 0.1 0.5, 1, and 2 ITO wt% on PET. Roughness(Ra) of ITO film with 0.1, 0.5, 1. and 2 ITO wt% is 4, 10, 12, and 16 nm. Resistivity with an increasing ITO concentration is $3.7{\times}10^6,\;2.4{\times}10^6,\;8{\times}10^5,\;and\;2{\times}10^5\;{\Omega}{\cdot}cm$. Transmissivity of ITO film decreased as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1, and 2 wt%.