• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.11
• /
• pp.501-507
• /
• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.616-619
• /
• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Proceedings of the KIEE Conference
• /
• 2005.10b
• /
• pp.116-119
• /
• 2005

In this paper, we propose the PLL system of the local oscillator system for the millimeter wave band's radio astronomy receiving system. The development of the proposed local oscillator system based on the YIG oscillator VCO with 26.5 ${\sim}$ 40GHz specification. This system consists of the oscillator part including the YIG VCO, the harmonic mixer, and the isolator, the RF processing part including the triplexer, limiter, and RF discrimination processor. and the PLL system including YIG modulator and controller. Based on this configuration. we verify the frequency and power stability of the developed local oscillator system according to some temperature variation. From this test results we confirm the stable output frequency and power characteristic performance of the developed La system at constant temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.200-200
• /
• 2008

This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

• Journal of the Korean Chemical Society
• /
• v.56 no.4
• /
• pp.416-423
• /
• 2012

Using time domain reflectometry, the complex dielectric spectra between 10 MHz to 20 GHz has been measured in the whole composition range at 10, 20, 30 and $40^{\circ}C$ for the binary mixtures of ethylene glycol and dimethyl sulfoxide. For all the mixtures, only one dielectric loss peak was observed in this frequency range. The relaxation in these mixtures can be described by a single relaxation time using the Debye model. A systematic variation is observed in dielectric constant (${\varepsilon}_0$) and relaxation time (${\tau}$). The excess permittivity (${\varepsilon}^E$), excess inverse relaxation time $(1/{\tau})^E$, Kirkwood correlation factor (g) and thermodynamic parameters viz. enthalpy of activation (${\Delta}H$) and Gibbs free energy of activation (${\Delta}G$) have been determined, to confirm the formation of hydrogen bonded homogeneous and heterogeneous cooperative domains, the dynamics of solute - solute interaction and the hindrance to molecular rotation in the hydrogen bonded glass forming ethylene glycol - dimethyl sulphoxide system.

• Journal of Electrical Engineering and Technology
• /
• v.3 no.4
• /
• pp.566-570
• /
• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• Information and Communications Magazine
• /
• v.28 no.2
• /
• pp.54-61
• /
• 2011

300~3000GHz(현 시점에서 TeraHz 대역으로 분류함) 범위의 무선 근거리 개인 영역 통신 (WPAN) 에서 20~40Gbps급 데이터 통신을 가능하게 하는 국제 표준화가 현재 IEEE802.15 그룹에서 진행 중이다. 본 논문에서는 주파수 할당과 관련하여, 비허가 주파수 대역의 이용 가능성 여부 및 시기 등에 대하여 지난 수년간 ITU에서 발표된 Tera 대역문서들 중심으로 요약하였고, Tera 대역 물리계층 요소 기술인 저전력 빔포밍 기술을 이용하여 전파의 직진성 및 거리에 따른 전력 감쇄 등을 극복하기 위한 기법을 소개한다. 또한 지향성 안테나 기반의 MAC, 타 통신기술과의 공존 문제, 그리고 상위 응용 계층을 위한 최적화의 관점에서 MAC 계층 주요 논의점에 대하여 언급하며 마지막으로 Tera 대역에서 동작하는 전자소자의 발전추세에 대하여 소개한다. 향후 약 5년 후에 표준화가 완성될 것으로 예상되는 시점에서, 본 논문이 국내의 통신 관련 연구자에게 초고속 데이터 통신을 가능하게 할 Tera 대역 WPAN시스템을 이해하고 동향을 파악하는데 유용한 자료로서 활용될 것을 기대한다.

• Journal of Powder Materials
• /
• v.14 no.5
• /
• pp.303-308
• /
• 2007

The oxidation of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline powder has been conducted to investigate its influence on the electromagnetic wave absorption characteristics of the soft magnetic material. Oxidation occurred primarily on the surface of nanocrystals. Oxidation reduced the real part of complex permeability due to the reduction of the relative volume of the powder, which otherwise contributes to the permeability. Oxidation reduced the absorption efficiency of the sheet at frequencies over 1GHz, indicating that the relative contribution of skin depth increments to the absorption was not significant. The pulverization and milling process lowered the optimum crystallization temperature of the material by $40{\sim}50^{\circ}C$ because of the internal energy accumulated during the fragmentation and powder thinning processes.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.2
• /
• pp.145.2-145.2
• /
• 2011

We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines toward 152 known $H_2O$-only maser sources (the sources which are previously detected only in the 22 GHz $H_2O$ maser emission) using Yonsei and Tamna 21-m radio telescopes of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and $H_2O$ maser emission were detected from 62 sources giving a detection rate of 40.8 %. SiO-only maser emission was detected from 27 sources, while $H_2O$-only maser was detected from 22 sources. We have identified 19 new detections of SiO maser emission for previous non-detection sources and 51 new detections of SiO maser for previously not observed sources. Characteristics of all observed sources in the IRAS two-color diagram is investigated including their evolutionary sequence and mutual relations between SiO and $H_2O$ maser emission. These observational results will be useful for statistical study of asymptotic giant branch (AGB) stars and future VLBI observation.

• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.583-590
• /
• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.