• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.179-179
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• 2009

This is for the electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST materials had been chosen for high frequency applications due to it's high permitivity and tunability. The BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700\;^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1 hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function of electric field ($\pm40$ KV/cm) at room temperature using inter-digital Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the 10 pairs finger was the best capacitance onto $Al_2O_3$ substrate. The capacitance was 0.9pF. Also Dielectric constant was been 351 at 100 mTorr and annealing temperature $750^{\circ}C$ for 1 hour. The loss tangent was been 0.00531.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.31.3-32
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• 2015

We present the physical properties of star forming regions in IC 10 obtained from Korea VLBI Network (KVN) 22GHz, the Submillimeter Array (SMA) CO, Very Large Array (VLA) HI 21cm, optical (U, B, V and H-alpha), and Spitzer infrared observations. IC 10 is a nearby (~0.7Mpc) irregular blue compact dwarf (BCD) galaxy which is likely to be experiencing an intense and recent burst of star formation. This nearby infant system showing high star formation rate but low metallicity (<20% of that of the Sun) provides critical environment of interstellar medium (ISM) under which current galactic star formation models are challenged. To make quantitative analysis of the ISM in the galaxy, we apply 2D cross-correlation technique to the multi-wavelength data for the first time. By cross-correlating different tracers of star formation, dust and gas phases in IC 10 in a two dimensional way, we discuss the gas properties and star formation history of the galaxy.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.125-130
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• 2005

This paper suggests an efficient method of protection ratio calculation and shows some calculated results applicable to frequency coordination in microwave relay system networks, and the net filter discrimination (NFD) associated with Tx spectrum mask and overall Rx filter characteristics has been examined to obtain the adjacent channel protection ratio. The protection ratio comprises several factors such as C/N of modulation scheme, noise-to-interference ratio, multiple interference allowance, fade margins of multi-path and rain attenuation, and NFD. According to computed results for 6.7 GHz, 64-QAM, and 60 km at BER $10^{-6}$, fade margin and co-channel protection ratio are 41.1 and 75.2 dB, respectively, In addition, NFD for channel bandwidth of 40 MHz reveals 28.9 dB at the first adjacent channel, which results in adjacent channel protection ratio of 46.3 dB. The proposed method provides some merits of an easy calculation, systematic extension, and applying the same concept to frequency coordination in millimeter wave relay system networks.

• Journal of electromagnetic engineering and science
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• v.9 no.3
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• pp.152-158
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• 2009

We have developed a novel digital feedback predistortion(DFBPD) linearization based on RF feedback PD for the wide bandwidth modulated signals. The wideband PD operation is carried out by combining the DFBPD and memory lookup table(LUT). To experimentally demonstrate the linearization performance of the proposed PD technique for wideband signal, a class-AB amplifier using an LDMOSFET MRF6S23140 with 140-W peak envelope power is employed at 2.345 GHz. For a forward-link 2FA wideband code-division multiple-access signal with 10 MHz carrier spacing, the proposed DFBPD with memory LUT delivers the adjacent channel leakage ratio at an 10 MHz offset of -56.8 dBc, while those of the amplifier with and without DFBPD are -43.2 dBc and -41.9 dBc, respectively, at an average output power of 40 dBm. The experimental result shows that the new DFBPD with memory LUT provides a good linearization performance for the signal with wide bandwidth.

• Journal of electromagnetic engineering and science
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• v.8 no.2
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• pp.70-75
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• 2008

In this paper, the EM wave absorber was designed and fabricated for countermeasure against EMI from a ceiling of a tollgate in ETC system. We fabricated several samples in different composition ratios of MnZn-ferrite, Carbon, and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability according to composition ratio. The optimized mixing ratio of MnZn-ferrite, Carbon, and CPE was found as 40:15:45 wt.% by experiments and simulation. Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the developed EM wave absorber has the thickness of 3.3 mm and absorption ability was more than 20 dB in the case of normal incidence and more than 11 dB for the incident angle from 15 to 45 degrees at 5.8 GHz. Therefore, it was confirmed that the newly developed absorber can be used for ETC system.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.340-347
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• 2004

Ultra-small size, high-performance, solenoid-type RF chip inductors utilizing low-loss A1$_2$O$_3$ core materials were investigated. The dimensions of the RF chip inductors fabricated were 1.0mm${\times}$0.5mm${\times}$0.5mm and copper coils were used. The materials (96％ A1$_2$O$_3$) and shape (I-type) of the core, the diameters (40${\mu}{\textrm}{m}$) and position (middle) of the coil, and the lengths (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. The high-frequency characteristics of the inductance (L) and quality-factor (Q) of the developed inductors were measured using a RF impedance/material analyzer (E4991A with E16197A test fixture). The developed inductors exhibit an inductance of 11 to 11.3nH and a qualify factor of 22.3 to 65.7 over the frequency ranges of 250 MHz to 1.7 GHz, and show results comparable to those measured for the inductors prepared by Coilcraft$^{TM}$. The simulated data described the high-frequency data of the L and Q of the fabricated inductors well.

• ETRI Journal
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• v.31 no.3
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• pp.254-262
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• 2009

This paper presents a novel simple filter design method based on a parallel short-ended coupled-line structure with capacitive loading for size reduction and ultra-broad rejection of spurious passbands. In addition, the introduction of a cross-coupling capacitor into the miniaturized coupled-line can create a transmission zero at the second harmonic frequency for better frequency selectivity and attenuation level. The aperture compensation technique is also applied to achieve a strong coupling in the coupled-line section. The influence of using the connecting transmission line to cascade two identical one-stage filters is studied for the first time. Specifically, such a two-stage bandpass filter operating at 2.3 GHz with a fractional bandwidth of 10% was designed and realized with low-temperature co-fired ceramic technology for application in base stations that need high power handling capability. It achieved attenuation in excess of -40 dB up to $4f_0$ and low insertion loss of -1.2 dB with the size of 10 mm ${\times}$ 7 mm ${\times}$ 2.2 mm. The measured and simulated results showed good agreement.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.226-229
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• 2004

본 논문은 초고주파 영역에서 개방 단말 동축선을 대신해서 복소 유전율을 측정할 수 있는 MEMS 프로브와 그 응용예로 MEMS 프로브 어레이를 제안한다. MEMS 프로브는 기존의 동축선 프로브와 달리 커넥터와의 연결이 간단하여 일회용으로 프로브를 사용할 수 있다는 점에서 의료용으로 사용할 수 있는 가능성이 있다. 샘플의 유전율 분포를 구하기 위해서 기존의 센서는 반복 접촉을 요구하고 이로 인한 번거로움과 측정 오차를 줄일 목적으로 MEMS 프로브 어레이를 개발 하였다. MEMS 프로브 어레이는 RF 스위치를 사용하여 다수의 측정 포인트를 한번의 센서 접촉으로 측정할 수 있는 새로운 개념의 프로브이다. 1GHz부터 40GHz까지의 광대역에서 0.9% 식염수의 유전율을 측정하여 MEMS 프로브의 성능을 검증하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.501-507
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.