• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.953-956
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• 2005

Low voltage actuation and high isolation characteristics are key features to be solved in electrostatic RF switch design. Since these parameters in the conventional parallel plate MEMS switch design are in trade-off relation, both requirements cannot be met simultaneously. In vertical comb design, however, the actuation voltage is independent to the vertical separation distance between the contact electrodes. Then, we can design the large separation distance between contact electrodes to get high isolation. We have designed an RF MEMS switch which has -40dB isolation at 5 GHz and 6 V operation voltages. The characteristics of the fabricated switch are being evaluate.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1638-1642
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• 2007

This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.835-840
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• 1994

In this study, the synthesis of Ba2Ti9O20 powder having chemically homogeneous and highly pure fine particle size distribution was attempted by the oxalate method. And the effects of ZrO2 addition was investigated. The four compositions (X=0, 0.028, 0.048, 0.068) of Ba2(Ti9-x, Zrx)O20 were prepared by precipitation reaction of BaCl2, TiCl4, and ZrOCl2, with oxalic acid and NH4OH acting as a precipitating agent and a pH regulator respectively, in aqueous solution. In case of 4.8 mol% ZrO2 addition, the single phase Ba2Ti9O20 was obtained at 120$0^{\circ}C$ and its dielectric properties was excellent showing K=40.5, Q=4621 at 5.4 GHz.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.20-25
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• 2012

In this paper, the EM wave absorber for ETC system was designed and fabricated. We fabricated several samples in different composition ratios of flaked sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability according to composition ratio. The optimized mixing ratio of flaked sendust and CPE was found as 60 : 40 wt.% by experiments and simulation. Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the developed EM wave absorber has the thickness of 2.75 mm and absorption ability was 22.5 dB in the case of normal incidence at 5.8 GHz. Therefore, it was confirmed that the newly developed absorber can be used for ETC system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.489-492
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• 2000

This paper describes a new transient voltage suppressor(TVS) with a low insertion loss and a very wide frequency bandwidth to protect antenna circuit from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth and high insertion loss. In order to improve these limitations, a coaxal type TVS, which consists of a gas tube is developed. The performance of the proposed transient voltage suppressor is tested by using a combination surge generator specified in IEC 61000-4-5 standard and by using a network analyzer of 40 MHz ∼ 5GHz bandwidth. From the experimental results, it is confirmed that the proposed TVS has an enough protection performance in low insertion loss and in wide frequency bandwidth

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.387-388
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• 2008

This paper presents the design approach and test results of the Q-band precision subminiature coaxial adaptor based on transmission line theory using multi-step impedance and air-holes to increase its cutoff frequency. In order to increase the frequency performance, the adaptor is designed with hooked structure, fixing step, multi-air-holes, and outer conductor. The return loss increments due to the hooked structure and multi air-holes are minimized to 2 dB and 1.5 dB, respectively. A VSWR(Voltage Standing Wave Ratio) of <1.2 is obtained from DC to 40 GHz, while guaranteeing the durability of the adaptor from room-temperature$(25^{\circ}C)$ to $120^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.49 no.3
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• pp.75-81
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• 2012

In this paper, an efficient means to estimate the dispersion characteristics of active FSS (or ESS) is presented. We numerically investigate the effective permittivity and the transmission coefficient of 2D metal-fiber composites using linear-lumped impedance loading. We modify the GEC method which is applied to 2D fiber composite material with arbitrary fiber orientation. We show that by varying the impedance value it is possible to control the resonance frequency of the array as well as the bandwidth.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.485-489
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• 2015

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.