• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.295-301
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• 2000

The effect of V2O5 addition on the low temperature sintering of Pb(Mn1/3Sb2/3)O3-PZT ceramics, which is known as a prominent material for piezoelectric transformer application was studied, and the densification behavior and piezoelectric characteristics of the samples as a function of heating rate were also examined. V2O5 led the system to liquid phase sintering by forming liquid phase during sintering, which accelerated densification through the particle rearrangement in the early stage of sintering. The liquid phase mostly existed at grain boundaries retarded the evaporation of PbO, while the densification temperature and the weight loss of V2O5-free samples were higher than those of samples with V2O5. Faster heating improved the densification of the samples regardless of V2O5 addition. The low temperature sintering at 100$0^{\circ}C$ was achieved in PMS-PZT ceramics with high density and reasonable dielectric and piezoelectric characteristics. This result revealed optimistic way to the development of multi-layered piezoelectric transformers.

• KSBB Journal
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• v.17 no.6
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• pp.586-589
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• 2002

Lipomyces starkeyi KSM 22 produces dextranase and amylase (DXAMase). The addition of 0.02％ (w/v) 2-deoxy-D-glucose or 0.5% (w/v) glycerol into a 1% (w/v) starch medium increased the final activity of DXAMase produced 2.5 fold or 2.4 fold, respectively, compared to that of a 1% (w/v) starch medium. This activity was similar to that produced with 1% (w/v) dextran. The stability of purified OXAMase at 40$\^{C}$ for 3 weeks was tested using the various enzyme stabilizers. With the addition of 25% (v/v) glycerol, 90.9% of initial activity was left after 3 weeks. For practical use, the addition of 1% (v/v) glycerol with 50 mM of CaCl$_2$ or KH$_2$PO$_4$was adequate and maintained 73.4% of the initial activity under the test conditions used.

• Journal of The Korean Astronomical Society
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• v.13 no.1
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• pp.15-26
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• 1980

The BV-photographic photometry was made for 1714 stars (V<19.5) in NGC 6752. The C-M diagram of this cluster shows an unusually extended blue horizontal branch $(V=13.5{\sim}17.8)$ with a wide gap $(V=16{\sim}16.7)$ and the well defined giant branch with gaps at V=13.85 and 16.2. The turnoff point is defined at $V=17.25{\pm}0.15$ and (B-V) = $0.46{\pm}0.02$. If we take $V_{HB}=13.85$ for NGC 6752, then ${\Delta}V=2.80,\;(B-V)_{0,g}=0.76\;and\;{\Delta}V_{TO}=3.40$ and the chemical abundance is estimated to be [Fe/H]=-1.67 or $Z=4.3{\times}10^{-4}\;and\;Y=0.26$. Some other physical parameters of this cluster are derived and compared with those for the well observed clusters M 3, M 13, M 15 and M 92.

• Bulletin of the Korean Chemical Society
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• v.14 no.1
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• pp.47-52
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• 1993

The vibrational relaxation rate constants of NO(v = 1-7) by $O_2\;and\;N_2$ have been calculated in the temperature range of 300-1000 K using the solution of the time-dependent Schrodinger equation. The calculated relaxation rate constants by $O_2$ increase monotonically with the vibrational energy level v, which is compatible with the experimental data, while those by $N_2$ are nearly independent of v in the range of $3.40 {\pm}1.60{\times}10_{-16} cm^3$/molecule-sec at 300 K. Those for NO(v) + $N_2$ are about 2-3 orders of magnitude smaller than those for NO(v) + $O_2$, because the latter is an exothermic processes while the former an endothermic. Relaxation processes can be interpreted by single-quantum V-V transition. The contributions of V-T/R transition and double-quantum V-V transition to the relaxation are negligible over the entire temperature range.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.11 no.2
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• pp.9-14
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• 2007

A signed 3-partite graph is a 3-partite graph in which each edge is assigned a positive or a negative sign. Let G(U, V, W) be a signed 3-partite graph with $U\;=\;\{u_1,\;u_2,\;{\cdots},\;u_p\},\;V\;=\;\{v_1,\;v_2,\;{\cdots},\;v_q\}\;and\;W\;=\;\{w_1,\;w_2,\;{\cdots},\;w_r\}$. Then, signed degree of $u_i(v_j\;and\;w_k)$ is $sdeg(u_i)\;=\;d_i\;=\;d^+_i\;-\;d^-_i,\;1\;{\leq}\;i\;{\leq}\;p\;(sdeg(v_j)\;=\;e_j\;=\;e^+_j\;-\;e^-_j,\;1\;{\leq}\;j\;{\leq}q$ and $sdeg(w_k)\;=\;f_k\;=\;f^+_k\;-\;f^-_k,\;1\;{\leq}\;k\;{\leq}\;r)$ where $d^+_i(e^+_j\;and\;f^+_k)$ is the number of positive edges incident with $u_i(v_j\;and\;w_k)$ and $d^-_i(e^-_j\;and\;f^-_k)$ is the number of negative edges incident with $u_i(v_j\;and\;w_k)$. The sequences ${\alpha}\;=\;[d_1,\;d_2,\;{\cdots},\;d_p],\;{\beta}\;=\;[e_1,\;e_2,\;{\cdots},\;e_q]$ and ${\gamma}\;=\;[f_1,\;f_2,\;{\cdots},\;f_r]$ are called the signed degree sequences of G(U, V, W). In this paper, we characterize the signed degree sequences of signed 3-partite graphs.

• Korean Journal of Veterinary Research
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• v.31 no.1
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• pp.11-18
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• 1991

The purpose of this study was designed to investigate the methods for the functional elevations of sperm-host (utero-vaginal, U-V) glands in domestic hens. The laying hens were assigned to five groups of low-, medium-, high- fecundity, gonadotrophin-, and caffeinetreated hen groups, these group hens were sacrified at interval after last artificial inseminations (AI). Number of U-V gland observed in tissue preparation of each hen U-V region were investigated, and also the appearance rates of spermatozoa-contained U-V glands were calculated. 1. In low-fecundity hen groups, the appearance rates of spermatozoa-contained U-V glands were found to be 13.5, 15.6, 11.8, 13.6, 2.3, 0, and 0% respectively at the hens of 1, 3, 7, 10, 13, 16, and 19 days after AI. 2. In medium-fecunditiy hen groups, the appearance rates of spermatozoa-contained U-V glands were found to be 21.7, 22.7, 13.4, 10.4, 10.0, 7.7 and 0% respectively at the hens of 1, 3, 7, 10, 13, 16, and 19 days after AI. 3. In high-fecundity hen groups, the appearance rates of spermatozoa-contained U-V glands were found to be 30.8, 31.8, 28.9, 13.0, 10.3, 10.8, and 0.9 respectively at the hen of 1, 3, 7, 10, 13, 16, and 19 days after AI. 4. In gonadotrophin-treated hen groups, the appearance rates of spermatozoa-contained U-V glands were found to be 31.8, 33.7, 32.3, 17.3, 12.0, 5.0, and 1.0% respectively at hens of 1, 3, 7, 10, 13, 16, and 19 days after AI. 5. In caffeine-treated hen groups, the appearance rates of spermatozoa-contained U-V glands were found to be 33.2, 29.2, 22.4, 17.8, 12.7, 0, and 1.1% respectively at hens of 1, 3, 7, 10, 13, 16, and 19 days after AI. 6. The appearance rates of completely filled U-V glands and partially filled U-V glands of spermatozoa-contained U-V glands were found to be 3.8:1. So we suggested as follows: The appearance rates of spermatozoa-contained glands tend to be high from 1 day after AI to 7 days and tend to declined rapidly from 10 days. Also higher fecundity hen groups tend to be higher in the appearance rates and longer in spermatozoa-contained duration in U-V glands than in lower fecundity hen groups. Gonadotrophin hormone tend to increase the appearance rates of spermatozoa-contained U-V glands than those in control group, whereas caffeine tend to increase those rates at 1 day and to declined more rapidly from 3 day than in control group.

• Journal of the Korean Mathematical Society
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• v.54 no.3
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• pp.807-820
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• 2017

An open smooth manifold is said of finite geometric rank if it admits a handlebody decomposition with a finite number of 1-handles. We prove that, if there exists a proper submanifold $W^{n+3}$ of finite geometric rank between an open 3-manifold $V^3$ and its stabilization $V^3{\times}B^n$(where $B^n$ denotes the standard n-ball), then the manifold $V^3$ has the Tucker property. This means that for any compact submanifold $C{\subset}V^3$, the fundamental group ${\pi}_1(V^3-C)$ is finitely generated. In the irreducible case this implies that $V^3$ has a well-behaved compactification.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.19-24
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• 1985

The phtoelectrochemical porperties of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped and pure $SrTiO_3$ ceramic electodes were investigated. Shapes of I-V and I-λ characteristics of the pure $SrTiO_3$ ceramic electrode are similar to those of SrTiO3 single crystal electorde ; the anodic current strats at -0.9V (vs. Ag/AgCI) in 1 N-NaOH aqueous solution and the photoresponse appears at a wavelength of about 390nm and the quantum efficiency is about 3.5% at wavelength of 390nm under 0.5V vs. Ag/AgCl. Photocurrents of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped electrodes and $V_2O_5$ doped ceramic electrode appears at wavelength of 390nm and 500nm respectively.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.54-60
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• 2007

In this study novel ESD protection device, namely, N/P-type Low Voltage Triggered SCR, has been proposed, for high speed I/O interface. Proposed device could lower high trigger voltage($\sim$20V) of conventional SCR and reduce latch-up phenomenon of protection device during the normal condition. In this Study, the proposed NPLVTSCR has been simulated using TMA MEDICI device simulator for electrical characteristic. Also the proposed device's test pattern was fabricated using 90nm TSMC's CMOS process and was measured electrical characteristic and robustness. In the result, NPLVTSCR has 3.2V $\sim$ 7.5V trigger voltage and 2.3V $\sim$ 3.2V holding voltage by changing PMOS gate length and it has about 2kV, 7.5A HBM ESD robustness(IEC61000-4-2).