• 대기
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• 제31권4호
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• pp.361-376
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• 2021

"Gangwon Yeongdong Wind Experiments (G-WEX) Pilot Study: Downslope windstorms in the Taebaek Mountains, South Korea" is promoted based on joint organization by Gangwon Regional Office of Meteorology and National Institute of Meteorological Research and participation by 12 institutions to understand the mechanism in development of Yeongdong wind phenomena. The special observation (G-WEX) involved total of 5 intensive observations in March 2020 and April 2020. To collect the data necessary for the research on Yeongdong wind phenomena, (1) high-resolution surface observation network was used to examine surface wind and (2) atmospheric soundings were observed by using Rawinsonde, Wind profiler, Wind Lidar, and Drone. This study covers the detailed information on the special observational experiments for downslope windstorms in the leeward of the Taebaek Mountains, named as the Yeongdong wind, including the observational strategies, experimental designs, and pilot studies during the Intensified Observing Period (IOPs). According to 2020 G-WEX observation results, downslope windstorms were observed in 2~3 km of upper atmosphere when the strong winds happened around the top of the mountain near Daegwallyeong. Also, dry adiabatic expansion related to downslope windstorms caused temperature rise and led to formation of an inversion layer in altitude below 2.5 km. Bands of strong wind were located right under the altitude where downslope windstorms are observed with temporal rise of the temperature. As these are preliminary observation results, there needs to be continuous related researches and high-resolution weather observation.

• 한국진공학회지
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• 제9권4호
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• pp.328-334
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• 2000

ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H_2$ 가스 혼합비와 유량, 증착시간을 고정시켜놓고 기판 bias 전압을 변화 시켜가면서 DLC 박막을 제작하였고, 제작된 박막의 두께, Raman과 FTIR 스펙트럼 그리고 미소경도 등을 측정 및 분석하여 기판 bias전압에 따른 이온충돌이 박막의 특성 변화에 미치는 영향을 조사하였다. FTIR 분석 결과로부터 기판 bias 전압을 증가시킬수록 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들의 탈수소화 현상을 확인할 수 있었고, 박막의 두께는 bias 전압을 증가시킬수록 감소되었다. 그리고 Raman 스펙트럼으로부터 Gaussian curve fitting을 통하여 $sp^3$/$sp^2$의 결합수에 비례하는 D와 G peak의 면적 강도비(ID/IG)는 기판 bias 전압을 증가시킬수록 증가하였고, 또한 경도도 증가하였다. 이 결과로부터 본 연구에서 제작된 수소를 함유한 비정질 탄소 박막은 기판 bias 전압의 크기를 증가시킬수록 DLC 특성이 더 향상됨을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.153-153
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• 2016

Polyoxymethylene copolymer (POM-C) is an attractive and widely used engineering thermoplastic across many industrial sectors owing to outstanding physical, mechanical, self-lubricating and chemical properties. In this research work, the POM-C blocks were irradiated with 1 MeV electron beam energy in five doses (100, 200, 300, 500 and 700 KGy) in vacuum condition at room temperature. The tribological and physico-chemical properties of electron beam irradiated POM-C blocks have been analyzed using Pin on disk tribometer, Raman spectroscopy, SEM-EDS, Optical microscopy, 3D Nano surface profiler system and Contact angle analyzer. Electron beam irradiation at a dose of 100 kGy resulted in a decrease of the friction coefficient and wear loss of POM-C block due to well suited cross-linking, carbonization, free radicals formation and energetic electrons-atoms collisions (physical interaction). It also shows lowest surface roughness and highest water contact angle among all unirradiated and irradiated POM-C blocks. The irradiation doses at 200, 300, 500 and 700 kGy resulted in increase of the friction coefficient as compared to unirradiated POM-C block due to severe chain scission, chemical and physical structural degradation. The electron beam irradiation transferred the wear of unirradiated POM-C block from the abrasive wear, adhesive wear and scraping to mild scraping for the 1 MeV, 100 kGy irradiated POM-C block which is concluded from SEM-EDS and Optical microscopic observations. The degree of improvement for tribological attribute relies on the electron beam irradiation condition (energy and dose rate).

• 한국표면공학회지
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• 제46권5호
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• pp.187-191
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• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• 열처리공학회지
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• 제27권1호
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• pp.10-14
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• 2014

Niobium nitride coatings have many potential thin film applications due to their chemical inertness, good mechanical properties, temperature stability and superconducting properties. In this study, $NbN_x$ coatings were prepared by inductively coupled plasma (ICP) assisted DC magnetron sputtering method on the surface of AISI 304 austenitic stainless steels. Effects of target power were studied on mechanical and chemical properties of the coatings. The coating structure was analyzed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The coating hardness was measured by micro-knoop hardness tester. The coating thickness was measured using a 3D profiler and wear characteristics were estimated using a ball-on-disk wear tester. The thickness of the $NbN_x$ coatings increased linearly from 300 nm to 2000 nm as the Nb target power increased, and it showed over $HK_{0.005}$ 4000 hardness above Nb target power of 300 W. Hexagonal ${\delta}^{\prime}$-NbN phase and cubic ${\delta}$-NbN phase were observed in the coating films and the hardness of the NbNx coatings was higher when these two peaks were mixed. The corrosion resistance increased with the increase of the Nb target power.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.