• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.51-57
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• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• ETRI Journal
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• v.36 no.6
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• pp.924-930
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• 2014

This paper presents a $0.13{\mu}m$ CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.106-112
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• 1997

We demonstrate a novel wavelength -division add/drop multiplexer employing fiber bragg gratings and polarization beam splitters. the multiplexer is easy to fbricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5Gbps-per-channel WDM transmission system. We find that the rejection of adjacent channels is more than -6dB, and the signal leakage through output port is less than -34dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.81-85
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• 1995

A guide-wave electro-optical modulatored direct-ional coupler 1X2 was fabricated on LiNbO$_3$ by proton exchange with self-aligned method After proton exchange process, the waveguide is formed by annealing process, The relationship between refractive index change of waveguide and maximun output was studied a long the annealing time. A self-alinged method was used to simplify the fabrication process of the waveguide and the maximize the efficiency of electric field. The modulatored directional coupler 1${\times}$2 has very good figures of merits; The measured crosstalk was -29.5[dB] and the modulating voltage of 8.0[V].

• Current Optics and Photonics
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• v.1 no.3
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• pp.214-220
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• 2017

A wavelength filter based on a polymer Bragg reflector has received much attention due to its simple structure and wide tuning range. Tilted Bragg gratings and asymmetric Y-branches are integrated to extract the reflected optical signals in different directions. To optimize device performance, design procedures are thoroughly considered and various design parameters are applied to fabricated devices. An asymmetric Y-branch with an angle of $0.3^{\circ}$ produced crosstalk less than -25 dB, and the even-odd mode coupling was optimized for a grating tilt angle of $2.5^{\circ}$, which closely followed the design results. Through this experiment, it was confirmed that this device has a large manufacturing tolerance, which is important for mass production of this optical device.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.196-200
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• 2005

A 40 channel arrayed-waveguide grating (AWG) filter operating in C-band and L-band wavelength regions has been fabricated using PLC (Planar Lightwave Circuit) processes with 0.75 refractive index difference. Its design was optimized for matching the center wavelength with the ITU-recommended wavelength. The characteristics of the fabricated C-band AWG are as follows; average insertion loss < 2.5 dB, polarization-dependent loss < 0.3 dB, non-adjacent crosstalk >35dB, and the loss uniformity of 0.8 dB. In the L-band AWG, wavelength accuracy is below 0.02nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.113-116
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• 1993

A guided - wave electro - optical modulatored directional coupler $2{\times}2$ was fabricated on X-cut $LiNbO_3$ by proton exchange wi th self-aligned method. The Electode pattern was formed by the four extra gap electrode separtion within self-aligned electrode mask. Initial cross over state turned that by controlling the anneal ing process and self-aligned electrodes are used in fabricating the electro-optical modulatored directional coupler $2{\times}2$. The modulatored directional coupler $2{\times}2$ has very good figures of merits: the measured crosstalk was -28.2 dB and the modulating valtage of 3.2[V].

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.3
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• pp.1-5
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• 2000

A waveguide of coupled optical modulator was fabricated on LiNbO$_3$ based on proton exchange with self-aligned thin film electrode method. The electrode pattern was designed using a self-aligned method. After proton exchange process, the waveguide was prepared by annealing process. The initial crossover state of the fabricated 2$\times$2 coupled optical modulator was observed with controlling the annealing process variables and the structure of self-aligned thin film electrodes. It was shown form the present work that the measured crosstalk is -29.5[dB] and 8.0[V] of detected modulating voltage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.111-114
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• 2002

We propose and fabricate a vertically integrated waveguide thermo-optic switch. It controls the optical path between two vertically stacked waveguide. As a first step, we fabricate polymeric waveguides. The measured propagation loss is ranged from 0.3 db/cm to 0.4 dB/cm at the wavelength of 1.55 $\mu\textrm{m}$. We fabricate the proposed vertically integrated waveguide thermo-optic switch to demonstrate its preliminary feasibility. The measured crosstalk is better than -10 db. The power consumption is about 500 mW. Further effort is necessary to improve its performance.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.93-96
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• 2007

We demonstrate a 240 km reach DWDM-PON at 8-Gb/s capacity based on wavelength-locked Fabry-Perot laser diodes and a bidirectional EDFA. We achieve a packet-error-free transmission in both the 64 upstream and 64 downstream channels, guaranteeing a 125 Mb/s symmetric data rate per user. There is no noticeable dispersion penalty. The power penalty due to the crosstalk induced by the DWDM transmission and detuning between AWGs is less than 1.2 dB, when the detuning is within ${\pm}0.12 nm$.