• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.1-10
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• 2023

Recently, as the demand for high-performance computers and mobile products increases, semiconductor packages are becoming high-integration and high-density. Therefore, in order to transmit a large amount of data at once, micro bumps such as flip-chip and Cu pillar that can reduce bump size and pitch and increase I/O density are used. However, when the size of the bumps is smaller than 70 ㎛, the brittleness increases and electrical properties decrease due to the rapid increase of the IMC volume fraction in the solder joint, which deteriorates the reliability of the solder joint. Therefore, in order to improve these issues, a layer that serves to prevent diffusion is inserted between the UBM (Under Bump Metallization) or pillar and the solder cap. In this review paper, various studies to improve bonding properties by suppressing excessive IMC growth of micro-bumps through additional layer insertion were compared and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.

• Journal of Biosystems Engineering
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• v.7 no.2
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• pp.18-29
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• 1983

A low cost and versatile data acquisition system for the field and laboratory use was developed by using a single board microcomputer. Data acquisition system based on a Z80 microprocessor was built, tested and modified to obtain the present functional system. The microcomputer developed consists of 6 kB ROM, 5 kB RAM, 6-seven segment LED display, 16-Hex. key and 8 command key board. And it interfaces with an 8 channel, 12 bits A/D converter, a microprinter, EPROM programmer for 2716, and RS232C interface to transfer data between the system and HP3000 mini-computer manufactured by Hewlett Packard Co., A software package was also developed, tested, and modified for the system. This package included drivers for the AID converter, LED display, key board, microprinter, EPROM programmer, and RS232c interface. All of these programs were written in 280 assembler language and converted to machine codes using a cross assembler by HP3000 computer to the system during modifying stage by data transferring unit of this system, then the machine language wrote to the EPROM by this EPROM programmer. The results are summarized as follows: 1. Measuring program developed was able to control the measuring intervals, No. of channels used, and No. of data, where the maximum measuring speed was 58.8 microsec. 2. Calibration of the system was performed with triangle wave generated by a function generator. The results of calibration agreed well to the test results. 3. The measured data was able to be written into EPROM, then the EPROM data was compared with original data. It took only 75 sec. for the developed program to write the data of 2 kB the EPROM. 4. For the slow speed measurements, microprinter instead of EPROM programmer proved to be useful. It took about 15 min. for microprinter to write the data of 2 kB. 5. Modified data transferring unit was very effective in communicating between the system and HP3000 computer. The required time for data transferring was only 1~2 min. 6. By using DC/DC converting devices such as 78-series, 79-series. and TL497 IC, this system was modified to convert the only one input power sources to the various powers. The available power sources of the system was DC 7~25 V and 1.8 A.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.1-9
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• 2024

This paper addresses the significance of Cu/Polymer Hybrid Bonding technology in the advancement of semiconductor packaging. As the demands of the AI era increase, the semiconductor industry is exploring heterogeneous integration packaging technologies to achieve high I/O counts, low power consumption, efficient heat dissipation, multifunctionality, and miniaturization. The conventional Cu/SiO₂ Hybrid Bonding structure faces limitations such as achieving compatibility with CMP processes to attain surface roughness below 1nm and the occurrence of bonding defects due to particles. However, Cu/Polymer Hybrid Bonding technology, utilizing polymers, is gaining attention as a promising alternative to overcome these challenges. This study focuses on the deposition, patterning, and material properties of polymers essential for Cu/Polymer Hybrid Bonding, highlighting the advantages and potential applications of this technology compared to existing methods. Specifically, the use of polymers with low glass transition temperatures (Tg) is discussed for their benefits in low-temperature bonding processes and improved mechanical properties due to their high coefficients of thermal expansion. Furthermore, the study explores surface property modifications of polymers and the enhancement of bonding mechanisms through plasma treatment. This research emphasizes that Cu/Polymer Hybrid Bonding technology can serve as a critical breakthrough in developing high-performance, low-power semiconductor devices within the industry.