• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• 한국결정성장학회지
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• 제6권3호
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• pp.392-398
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• 1996

$Si_{3}N_{4}$에 평균입경이 다른 SiC 분말을 0, 10, 20, 30, 40 vol% 첨가하여 고온가압소결법으로 초미립복합재료를 제조하였다. SiC의 첨가량에 따라 $Si_{3}N_{4}$의 결정립성장이 억제되어 원형의 미세한 결정립들이 많아졌다. 이러한 경향은 평균입경이 작은 SiC를 사용한 조성에서 현저하게 나타났다. 이에 따라 파괴강도와 경도는 작은 SiC를 첨가한 시편에서 높은 값을 나타냈으며, 파괴인성은 낮았다.

• 한국결정성장학회지
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• 제6권3호
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• pp.386-391
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• 1996

$Si_{3}N_{4}$에 평균입경이 270 nm인 SiC 분말을 0, 10, 20, 30, 40 vol% 첨가하여 고온 가압소결법으로 $Si_{3}N_{4}/SiC$ 초미립복합재료를 제조하였다. 소결후 기지상인 ${\alpha}-Si_{3}N_{4}$는 ${\beta}-Si_{3}N_{4}$로 상전이하였으며, 이차상인 ${\beta}-SiC$는 변화가 없었다. 소결조제의 첨가에 의한 입계결정상은 검출되지 않았다. SiC의 첨가량이 많아짐에 따라 $Si_{3}N_{4}$ 결정립성장은 억제되어 미세한 결정입이 나타났으며, 작은 임자는 기지상 임내에 큰 SiC는 임계에 존재하였다. SiC 첨가에 따라 파괴강도는 약간 증가후 감소하였으며, 파괴인성은 감소하였고, 경도는 직선적으로 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• 센서학회지
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• 제17권5호
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.606-610
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• 2007

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.

• 한국세라믹학회지
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• 제23권3호
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• pp.9-14
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• 1986

$\beta$-SiC bonded SiC bodies were prepared from various conditions such as several compositions of(Si+C)/$\alpha$ -SiC ratio and different firing schedules and were respectively investigated compressive strength MOR and mi-crostructure. One firing schedule which produced the specimens that had $\beta$-SiC neck form with the highest strength was selected and experimented by each firing temperature. results obtained are as follows : 1) The amount of (Si+C) for th highest MOR of SiC-(Si+C) sintered body is 20wt% 2) By adding 20wt% content of (Si+C) and heating up to 1, 500 with soaking 3hrs respectively at 1,150$^{\circ}C$ 1,250$^{\circ}C$ 1,350$^{\circ}C$ and 1,400$^{\circ}C$ the highest MOR of fired specimen was resulted and its microstructure of ma-trix was composed of close $\beta$-SiC neck. 3) Microstructure of $\beta$-SiC were different greatly from each other by firing time and/or quantity of adding mix-ture and it was confirmed that they were composed of neck particle-like and heterogeneous texture. 4)$\beta$-SiC synthesis proceed rapidly at the temperature between 1,250$^{\circ}C$ and 1,350$^{\circ}C$ 5) All of the properties of 85 SiC-20(Si+C) specimen improved according to increasing temperature above 1,350$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).