• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• Composites Research
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• v.32 no.3
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• pp.148-157
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• 2019

In this study, $C_f/SiC$, $SiC_f/SiC$ and $C_f-SiC_f/SiC$ ceramic composites reinforcing carbon fiber, SiC fiber and hybrid fiber were fabricated by hybrid TGCVI and PIP process. After the thermal shock cycle, 3-point bending and Oxy-Acetylene torch test, their mechanical behavior, oxidation and erosion resistance were evaluated. The $C_f/SiC$ composite showed a decrease in mechanical property along with increasing temperature, a pseudo-ductile fracture mode and a large quantity of erosion. The $SiC_f/SiC$ composite exhibited stronger mechanical property and lower erosion rate compared to the $C_f/SiC$, but brittle fracture mode. On the other hand, hybrid type of $C_f-SiC_f/SiC$ composite gave the best mechanical property, more ductile failure mode than the $SiC_f/SiC$, and lower erosion rate than the $C_f/SiC$. During the Oxy-Acetylene torch test, the $SiO_2$ formed by reaction of the SiC matrix with oxygen prevented further oxidation or erosion of the fibers for $C_f-SiC_f/SiC$ and $SiC_f/SiC$ composites particularly. In conclusion, if a hybrid composite with low porosity is prepared, this material is expected to have high applicability as a high temperature thermo-structural composite under high temperature oxidation atmosphere by improving low mechanical property due to the oxidation of $C_f/SiC$ and brittle fracture mode of $SiC_f/SiC$ composite.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.626-634
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• 1995

The SiC-porcelain powder mixtures containing 51.9wt% SiC are produced as by-products from the surface abrasion process of porcelain cores. This raw powders were used as starting materials for the synthesis of SiC containing ceramics. The specimen, which was fired at 135$0^{\circ}C$ from raw powders, had SiC, $Al_{2}O_{3}$, , cristobalite, mullite as crystalline phases, and the fractured microstructure showed dispersed SiC crystalline particles almost wetted with glassy matrix and spherical pores. Although the oxidation of SiC containing powder compacts wetted with glassy matrix and spherical pores. Although the oxidation of SiC containing powder compacts started at the range of 600~80$0^{\circ}C$ form the analysis of weight gain, the presence of $SiO_{2}$ crystallien phase and cristobalite was confirmed at 100$0^{\circ}C$ by XRD analysis. Mullitization of specimens was accelerated by preheating before the final firing. The specimen sintered at 135$0^{\circ}C$ after 100$0^{\circ}C$ preheating consisted of SiC, cristobalite, mullite as crystalline phases, and revealed 2.24g/$cm^{3}$ bulk density, 11.73% water adsorption, porous microstructure with small amount of glassy phase. SiC contents of specimens, which was 51.9 wt% in the raw powders, reduced to 37~22 wt% after firing at 135$0^{\circ}C$ depending on the preheating condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.309-314
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• 2003

A spark plasma sintering technique has been used for the fabrication of $Al_2O_3$-SiC nanocomposites at the low temperature of $1100^{\circ}C$∼$1500^{\circ}C$. The sintered $Al_2O_3$-SiC composites shows very homogeneous microstructure without any particular abnormal grain growth, indicating that the addition of nano-sized SiC particles is very effective to control grain growth and to induce the residual stress in the $Al_2O_3$ matrix, resulting in the intragranular fracture. These SiC particles are present in the grain boundaries and also intragrain, depending on the sintering condition, and improve remarkably the mechanical properties of $Al_2O_3$-SiC composite through the mechanisms of strengthening and toughening induced by crack diffraction and crack bridging.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.47-51
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• 1997

The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al2O3 disk and Si/SiC/graphite disk was 1/6 lower compared with two $Al_2O_3$ disks on the basis of 100,000 cycles.