• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
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• pp.61-64
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• 2000

IMT 2000 단말기용 2.14 GHz 대역의 저잡음 증폭기 (Low Noise Amplifier, LNA)를 MCM-C 기술을 이용하여 제작하고 그 특성을 측정하였다. 먼저 저잡음 증폭기 회로를 설계한 후, 각 소자들의 고주파 library를 이용한 회로 시뮬레이션으로과 특성을 확인하였다. 시뮬레이션 상에서 이득(Gain)은 17 dB 였으며, 잡음지수 (Noise Figure)는 1.4 dB 였다. MCM-C 저잡음 증폭기는 LTCC 기판과 전극 및 저항체의 동시소성에 의해 코일(L), 콘덴서(C), 저항(R)을 기판 내부에 넣었으며, 마이크로 스트립 라인과 SMD 부품의 실장을 위한 Pad를 최상부에 제작하였다. 기판은 총 6 층으로 구성하였으며, 내부에 포함된 수동소자는 코일 2개, 콘덴서 2개, 저항 3개 등 총 7 개 였다. 시작품의 특성 측정 결과, 2.14 GHz에서 이득은 14.7 dB 였으며, 잡음지수는 1.5 dB 정도의 값을 가졌다.

• 한국전자파학회논문지
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• 제27권6호
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• pp.491-494
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• 2016

본 논문에서는 준등각 맵핑 기반 전자기파 투명화 구조의 산란 단면적(Scattering Cross Section: SCS)을 최소화 시키는 설계 방법을 제시한다. 준등각 맵핑에 기반하여 설계한 전자기파 투명화 구조를 사각형 형태로 잘라낸 뒤 경계면 밖의 굴절률과 내부의 1미만인 굴절률을 자유 공간으로 근사하는 방법을 사용함으로써 구현하기 어려운 굴절률 문제를 해결하였다. 사각형 형태의 크기는 시뮬레이션을 통해 전자기파 투명화 구조를 적용한 마름모형 금속 물체의 산란 단면적이 최소가 되도록 최적화하였다. 설계된 자유 공간형 전자기파 투명화 구조를 3D 프린터를 이용하여 제작, 산란파 저감 특성을 전자기장 스캐너를 이용하여 실험적으로 검증하였다.

• Advances in materials Research
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• 제2권3호
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• pp.133-140
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• 2013

This paper aims to focus on the microwave processing of thick films which is a fast, cheap technique and could be the alternative to the currently used conventional high temperature processing technique. Microwave processing has gained worldwide acceptance as a novel method for heating and sintering a variety of materials, as it offers specific advantages in terms of speed, energy efficiency, process simplicity, finer microstructures and lower environmental hazards. Silver conducting thick films were prepared and processed in the household microwave oven. The films sintered at different time period by keeping the other parameter such as microwave power, film thickness etc constant. The microstructure analysis revealed that the surface morphology of the microwave processed films become compact with respect to the processing time. The sheet resistance for microwave sintered silver films is in the range of 0.003 to $1.207{\Omega}/{\Box}$ where as the films fired at 750 and $850^{\circ}C$ showed the resistance of 0.009 and $0.003{\Omega}/{\Box}$ which can be comparable. The results revealed that the microstructure of the microwave sintered films has more uniform and compact surface than that of the conventionally fired films. The paper reports upon the preparation of silver thick film by screen printing technique and processing the same by microwave which also compared with the conventionally processed thick films.

• 한국정보통신학회논문지
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• 제21권5호
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• pp.906-912
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• 2017

본 논문에서는 실내 디지털 TV(DTV) 수신용 3소자 광대역 준-야기 안테나 (quasi-Yagi antenna; QYA) 설계 방법에 대해 연구하였다. 제안된 QYA는 마이크로스트립(microstrip; MS) 선로와 다이폴 투사기를 급전하는 코플래너스트립(coplanar strip; CPS) 선로 간 밸런을 새로운 형태로 구성하였다. 제안된 밸런은 MS 선로 종단을 CPS에 단락핀으로 연결하여 구성하였으며, CPS 선로와 반사기를 원형 링 도체로 연결하였다. 제안된 구조의 안테나를 지상파 DTV 방송 주파수 대역인 470-806 MHz 대역에서 동작하도록 설계하였다. FR4 기판 상에 $270mm{\times}150mm$ 크기로 제작된 안테나는 전압정재파비가 2 이하인 주파수 대역 470-820 MHz, DTV 대역 내 배열 축 방향으로의 이득 > 4.0 dBi, 전후방비 > 8.4 dB 인 양호한 특성을 보인다.

• 디지털융복합연구
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• 제15권3호
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• pp.319-333
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• 2017

본 연구에서는 최근 증가하고 있는 인터넷 개인 방송 진행자의 불안정한 수익 환경을 개선하기 위해 수익에 영향을 미치는 요인을 조사하는 것에 목적이 있다. 본 연구의 대상은 대부분의 인터넷 개인 방송의 성격을 종합적으로 갖추고 있는 게임 방송의 시청자로, 매일 1시간 이상 시청하며 지속해서 후원을 하고 있는 50명을 대상으로 설문조사를 하였다. 인터넷 개인 방송의 수익구조를 조사하기 위해 소셜TV에서의 사회적 현존감과 한국의 리얼리티 예능 프로그램에서 시청자와 출연자가 갖는 상호작용, 그리고 인터넷 방송의 선행연구에서 시청 동기 요인을 독립변수로 설정하였고, 미디어의 시청 만족도를 매개변수로 하여 종속변수인 후원을 위한 사이버 캐시 구매 의도에 미치는 영향을 조사하였다. 그중 시청자의 정보 추구 동기와 시청자와 방송 진행자 간의 의사사회 상호작용이 인터넷 개인 방송의 시청 만족도에 유의한 영향을 미쳤고 시청 만족도는 구매 의도에 긍정적인 영향을 미치는 것을 알 수 있었다.

• Progress in Superconductivity
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• 제8권1호
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• Progress in Superconductivity
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• 제9권2호
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• pp.167-172
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• 2008

We fabricated $YBa_2Cu_3O_{7-x}$(YBCO) films on (00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution. The films with various thicknesses were prepared by repeating the dip-coating and calcining processes. The effects of film thickness on phase formation, microstructures, and critical properties were evaluated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The microstructure and resultant critical current($I_C$) and critical current density($J_C$) varied remarkably with film thickness: The ($I_C$) value increased from 39 to 160 A/cm-width as the number of coatings increased from one to four, while the corresponding $J_C$ was measured to be in the range of $0.84-1.21\;MA/cm^2$. Both the $I_C$ and $J_C$ decreased when an additional coating was applied due to microstructural degradation, indicating that the optimum thickness is in the range of $1.1-1.8\;{\mu}m$. The possible cause for the decrease in the $I_C$ and $J_C$ value for film thicker than $1.8\;{\mu}m$ include non-uniform thickness, increased surface roughness, and the poor formability of the YBCO phase and texture arising from the insufficient heat treatment time with respect to the increased thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국의류학회지
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• 제35권3호
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• pp.292-303
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• 2011

This research suggested a draft proposal for a smart jacket design, which has applied wearable technologies to provide convenience in daily life. The smart jacket combined with a vest was the casual item for autumn and winter. The heating device was composed of the heating element, battery, controller, electric wire, connector, switch, and charger. A stable electronic conductor fiber of good heating effect with a flexible zigzag form has been selected for the heating element. The lighting device has been made in a way that attaches the LED and its power controller in the same mechanical device. As the result of the wearing test, the heating effect turned out to be effective in the order of: back, both the back and abdomen and only the abdomen. When wearing a smart jacket, the back and abdomen have been selected as favorable body parts for heating. Pockets and hems are selected as the adequate place to attach the LED lighting, and the brightness of LED lighting has turned out to be suitable and useful. Based on the test results, the first draft proposal has attached the heating element only in the back and its controller located in the inside pocket of the vest. In addition, the LED has been attached to the front pocket of the jacket. As to the second draft proposal, heating elements have been placed in the back and the abdomen. Each controller for the heating elements has been placed in the front and inside pocket of vest, and the LED lighting has been attached to the hem of the jacket. The smart jacket combined with a wearable device was assessed by functioning categories. The user showed a high satisfaction in the heating and illuminating function of a smart jacket.