• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.550-552
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• 2003

We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• Fibers and Polymers
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• v.1 no.1
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• pp.25-31
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• 2000

Poly(3-hexyl thiophene)(P3HT) and poly(3-dodecyl thiophene)(P3DT) were polymerized by oxidative coupling with ferric chloride. The P3HT light-emitting device emitted red light and it could be observable in the ordinary indoor light. The device had the turn-on electric field of about 3$\times$$10^7$ V/m. The maximum electroluminescene (EL) intensity was obtained when the thickness of polymer layer was about 130 nm in IT0/P3HT/Al device. The maximum external quantum yield was 0.002%. The maximum luminance was 21 cd/$m^2$. The EL intensity decreases with increasing the crystallinity of the polymer layer. By using the oriented poly(3-alkyl thiophene)(PAT) layer as an electroluminescent layer in the ITO/polymer/Al light-emitting devices, the polarized EL light emission was observed. The EL intensity ratio of parallel to perpendicular direction to the stretch direction for P3HT was about 1.40.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of the Korea Society for Simulation
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• v.24 no.3
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• pp.61-68
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• 2015

Mobile ad hoc networks (MANETs) are self-organized dynamic networks populated by mobile nodes. This paper presents the improved cross-layer approach to complement the recent works for video transmission services on MANET. We use a statistical design of experiment and analysis in order to investigate interactions between major factors of each layer effectively with minimizing ns-3 simulation run time. The proposed cross-layer approach considers MANET protocol layers (i.e., physical, network and transmission layers) and an application layer (i.e., a video encoder) as factors simultaneously. In addition, the approach defines an objective video quality metric as a response variable. The result of this paper can be applicable as a preliminary research to design an optimized video transmission application which has ability to adjust controllable factors to dynamic uncontrollable factors.

• Korean Journal of Soil Science and Fertilizer
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• v.42 no.5
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• pp.364-370
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• 2009

This study was conducted to survey, analyze on the compaction layer and the plow layer at Jeonbug and Jisan series paddy soil, which is the representative soil in fluvio-marine and local alluvium, respectively. The depths of surface soil were 12.6 and 12.7 cm in Jeonbug and Jisan series, respectively. A plowing depth was 10.5 cm. The properties of compaction layer in two soil series were as follows. The hardness were $14.7kg\;cm^{-2}(25.3mm)$ and $8.7kg\;cm^{-2}(22.1mm)$ in Jeonbug and Jisan series, respectively. The thickness were 22.3 cm and 17.8 cm in Jeonbug and Jisan series, respectively. The depth of soil compaction, which means depth from surface, were 15 and 20 cm in Jeonbug and Jisan series, respectively. The relationship between the hardness of compaction layer and the depth of surface soil showed negative correlation, however relationship between the hardness and the thickness of compaction layer showed positive correlation. Soil temperature was lower in compaction layer than in plow layer. This temperature differences between compaction layer and plow layer were from 1.0 to $2.5^{\circ}C$ in Jeonbug series and from 0.7 to 2.1 in Jisan series. The soil physical properties of compaction layer were higher in bulk density and solid phase and lower in porosity and gaseous phase than those of plow layer in all soil series. The soil chemical properties of compaction layer were higher in pH, content of available silicate, exchangeable calcium and magnesium but lower in total nitrogen, content of organic matter and available phosphate than those of plow layer in all soil series. Cation exchangeable capacity and content of exchangeable potassium were similar between compaction layer and plow layer in Jeonbug series, however, in Jisan series these were lower in compaction layer than in plow layer. Elution amount of inorganic nitrogen were lower in compaction layer than in plow layer in all soil series. The content of soluble Fe and Mn were plenty in compaction layer compared with plow layer and these tendency was apparent in Jeonbug series. The water depth decrease were fast until the latter part of June, and were slow as $1{\sim}3mm\;day^{-1}$ for July and August, and were fast again from september. Rice roots distributions as each soil series and tillage method were 25 cm at rotary plowing in Jeonbug series, 30 cm at deep plowing in Jeonbug series, and 20 cm at tillage in Jisan series. Dry weight per m2 at heading stage were much in order of deep plowing in Jeonbug series, rotary plowing in Jeonbug series, and tillage in Jisan series.

• Journal of Korea Multimedia Society
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• v.19 no.12
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• pp.1992-1999
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• 2016

In layered communication architecture, each layer is designed to service its own functions to higher layer while getting serviced by lower layer. Usually layered architectures are not optimized in a total view of whole services and functions. So cross layer design pursues performance enhancements by optimizing in various ways. In LTE, MAC layer uses HARQ mechanism and RLC layer uses ARQ mechanism for retransmission. According to the 3GPP 36.331 specification, two layers' cooperation may not happen in an optimized way. This paper suggests an adaptive MAC layer approach which RLC layer's function might be initiated in MAC layer in advance to utilize MAC layer's idling wasting time for RLC layer's next decision. This adaptive ARQ method in MAC layer speeds up the next retransmission and reduces the overall transmission time. Emulation shows the improved performance in total retransmission time and retransmission success ratio. In wireless shadow area, the retransmission occurs frequently. Our approach has strong points in this poor wireless condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.588-591
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• 2004

Polyazomethine type conjugated copolymers containing phenanthridine units, poly(PZ-PTI), were synthesized by Schiff-base reaction. This new conjugated copolymer exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as phenanthridine groups. Double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) light emitting diode (LED) exhibited enhanced EL emission and efficiency compared to that of single layer (ITO/poly(PZ-PTI)/Mg) LED. With increasing the thickness of $Alq_3$ layer in double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) LED the emission peak gradually shifted to the single layer (ITO/$Alq_3$/Mg) LED, confirming good hole transporting behaviour of the synthesized conjugated copolymer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.