• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.41-44
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• 2001

In this paper, we explain briefly polysilicon guard layer in a simple 3-D structure. Simulation was performed extensively to see interference and characterize the role of the polysilicon guard layer. Especially, we performed extensively S-parameter simulation to analysis the signal interference. The interference was characterized in terms of oxide thickness, polysilicon doping concentration, thickness, number of contact of polysilicon guard, and metal guard size.

• Polymer Science and Technology
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• v.24 no.3
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• pp.254-260
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• 2013

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.6
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• pp.959-964
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• 2001

An experimental investigation on the near-field electromagnetic loss of thin copper layers has been presented using microfabricated microwave transceivers for applications to multi-chip microsystems. Copper layers in the thickness range of 0.2$\mu$m∼200$\mu$m have been electroplated on the Pyrex glass substrates. Microwave transceivers have been fabricated using the 3.5mm$\times$3.5mm nickel microloop antennas, electroformed on the silicon substrates. Electromagnetic radiation loss of the copper layers placed between the microloop transceivers has been measured as 10dB∼40dB for the wave frequency range of 100MHz∼1GHz. The 0.2$\mu$m-thick copper layer provides a shield loss of 20dB at the frequencies higher than 300MHz, whereas showing a predominant decreases of shield loss to 10dB at lower frequencies. No substantial increase of the shield effectiveness has been found for the copper shield layers thicker that 2 $\mu$m.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.178-182
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• 2007

This study represents the efficient depth measurement for 3-dimensional microsystems using the disparity histogram from stereo images. Implementation of user-friendly Windows program written in C++ involves the various methods for the stereo-image processing in which the minimization of matching-pixel error upon the unique point for stereo images was carried out as a pre-processing method. Even though MPC among various methods was adopted in the present measurement, the resulting measurements seem to require optimizations of the windows sizes and corrections of post-manipulation for stereo images. The present work using Windows program is promising to measure the 3-dimensional depth of micro-system efficiently in implementing the 3-dimensional structure of micro-systems.

• Journal of Periodontal and Implant Science
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• v.43 no.6
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• pp.251-261
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• 2013

A paradigm shift is taking place in medicine and dentistry from using synthetic implants and tissue grafts to a tissue engineering approach that uses degradable porous three-dimensional (3D) material hydrogels integrated with cells and bioactive factors to regenerate tissues such as dental bone and other oral tissues. Hydrogels have been established as a biomaterial of choice for many years, as they offer diverse properties that make them ideal in regenerative medicine, including dental applications. Being highly biocompatible and similar to native extracellular matrix, hydrogels have emerged as ideal candidates in the design of 3D scaffolds for tissue regeneration and drug delivery applications. However, precise control over hydrogel properties, such as porosity, pore size, and pore interconnectivity, remains a challenge. Traditional techniques for creating conventional crosslinked polymers have demonstrated limited success in the formation of hydrogels with large pore size, thus limiting cellular infiltration, tissue ingrowth, vascularization, and matrix mineralization (in the case of bone) of tissue-engineered constructs. Emerging technologies have demonstrated the ability to control microarchitectural features in hydrogels such as the creation of large pore size, porosity, and pore interconnectivity, thus allowing the creation of engineered hydrogel scaffolds with a structure and function closely mimicking native tissues. In this review, we explore the various technologies available for the preparation of macroporous scaffolds and their potential applications.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.