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RCGVS Design Improvement and Depressurization Capability Tests for Ulchin Nuclear Power Plant Units 3 and 4

  • Sung, Kang-Sik;Seong, Ho-Je;Jeong, Won-Sang;Seo, Jong-Tae;Lee, Sang-Keun;Keun hyo Lim;Park, Kwon-Sik;Oh, Chul-Sung
    • Proceedings of the Korean Nuclear Society Conference
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    • 1998.05a
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    • pp.417-422
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    • 1998
  • he Reactor Coolant Gas Vent System(RCGVS) design for Ulchin Nuclear Power Plant Units 3&4(UCN 3&4) has been improved from the Yonggwang Nuclear Power Plant Units 3&4(YGN 3&4) based on the evaluation results for depressurization capability tests performed at YGN 3&4. There has been a series of plant safety analyses for Natural Circulation Cooldown(NCC) event and thermo-dynamic analyses with RELAP5 code for the steam blowdown Phenomena in order to optimize the orifice size of UCN 3&4 RCGVS. Baesd on these analyses results, the RCGVS orifice size for UCN 3&4 has been reduced to 9/32 inch from the l1/32 inch for YGN 3&4. The depressurization capability tests, which were performed at UCN 3 in order to verify the FSAR NCC analysis results, show that the RCGVS depressurization rates are being within the acceptable ranges. Therefore, it is concluded that the orificed flow path of UCN 3&4 RCGVS is adequately designed, and can provide the safety-grade depressurization capability required for a safe plant operation.

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Crystal Characteristics of 3C-SiC Thin-films Grown on 2 inch Si(100) wafer (2 inch Si(100)기판위에 성장된 3C-SiC 박막의 결정특성)

  • Chung, Su-Young;Chung, Yun-Sik;Ryu, Ji-Goo;Chung, Gwiy-Sang;Shigehiro, Nishino
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.452-455
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

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Discharge Rate Prediction of a new Sandbypassing System in a Field (새로운 샌드바이패싱 시스템의 토출율 예측을 위한 현장실험 연구)

  • Kweon, Hyuck-Min;Park, Sang-Shin;Kwon, Oh-Kyun
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.23 no.4
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    • pp.292-303
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    • 2011
  • A new type of sand bypassing system is proposed for recovering the eroded beach in this study. This system provides an added methodology to the soft defence which is main recovery method for the coastal shore protection in the world. The study proposes a conceptional design and manufacturing procedure for the relatively small size machine of sand bypassing. In order to get the discharging volume information, the power capacity of the system is tested in the field. The discharge rate of the new system shows up to the expected maximum of 618 ton/hr which is 9.6% lower than that by theoretical calculation. It gives a resonable agreement in this system when the flow is assumed to be of the high density. In this study, the delivering volume of sand is estimated according to the discharge rate. The combination of 300 mm(12 inch) intake and 250 mm(10 inch) discharge pipe line has the pumping capacity of $103\;m^3/hr$ which is nearly the same as that of South Lake Worth Inlet sand bypassing system, Florida, U.S.A.. The proposed system added the mobility to its merit. The unit price of Florida's sand bypassing is $$8~9/m^3$ (US). The system would be economically suitable for small volume of sand because no additional equipment is necessary for the intake. The diesel fuel of 25~30 l/hr was consumed during the system operation. The multiple working system would be the next investigation target for large volume of sand.

The Study of Compare to Clinical Applied versus Theoretical Fitness on Axillary Crutch (임상에서 적용되는 목발과 이론적 적합성에 대한 비교 연구)

  • Ahn, Duck-Hyun;Kim, Keun-Jo
    • Journal of Korean Physical Therapy Science
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    • v.3 no.4
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    • pp.113-120
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    • 1996
  • The purpose of this study was to comparison clinical applied versus theoretical fitness on axillary crutch in human stance phase. Ideal crutch length is defined as the length of the crutch, including accessories, obtained during stance when the crutch tip is 15 cm(about 6inch) lateral and 15 cm(about 6 inch) anterior to the fifth toe and the axillary pad is 5 cm(about 2 inch) below the axillay fold. The participations(volunteers) were 71 inpatients(53 men and 18 women) who have orthopedic and neurological impairment on unilateral and/or bilateral lower extrimities, and mean age was 31.4 year old. Prior to participation, each subject informed the procedures of experiment from researcher and assistant researcher. This measured for axillary crutch using each of the following aspects : (1) length of actual using crutch, (2) length of axillary fold after modified(77% of actual height), (3) angle of elbow flexion after modified(77% of actual height). In order to determine the statistical significance of result, t-test were applied at the 0.05 level of significance. The result were as follows ; 1. There was significant difference between actual crutch and ideal crutch length(77% of actual height)(p<0.05). 2. There was significant difference of length of axillary fold between actual and ideal crutch (77% of actual height)(p<0.05). 3. There was significant difference of angle of elbow flexion between actual and ideal crutch(77% of actual height)(p<0.05).

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Effect of Gas now Modulation on Etch Depth Uniformity for Plasma Etching of 150 mm GaAs Wafers (150 mm GaAs 웨이퍼의 플라즈마 식각에서 식각 깊이의 균일도에 대한 가스 흐름의 최적화 연구)

  • 정필구;임완태;조관식;전민현;임재영;이제원;조국산
    • Journal of the Korean Vacuum Society
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    • v.11 no.2
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    • pp.113-118
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    • 2002
  • We developed engineering methods to control gas flow in a plasma reactor in order to achieve good etch depth uniformity for large area GaAs etching. Finite difference numerical method was found quite useful for simulation of gas flow distribution in the reactor for dry etching of GaAs. The experimental results in $BCl_3/N_2/SF_6/He$ ICP plasmas confirmed that the simulated data fitted very well with real data. It is noticed that a focus ring could help improve both gas flow and etch uniformity for 150 mm diameter GaAs plasma etch processing. The simulation results showed that optimization of clamp configuration could decrease gas flow uniformity as low as $\pm$ 1.5% on an 100 mm(4 inch) GaAs wafer and $\pm$ 3% for a 150 m(6 inch) wafer with the fixed reactor and electrode, respectively. Comparison between simulated gas flow uniformity and real etch depth distribution data concluded that control of gas flow distribution in the chamber would be significantly important in order or achieve excellent dry etch uniformity of large area GaAs wafers.

Technical Trends of Semiconductors for Harsh Environments (극한 환경용 반도체 기술 동향)

  • Chang, W.;Mun, J.K.;Lee, H.S.;Lim, J.W.;Baek, Y.S.
    • Electronics and Telecommunications Trends
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    • v.33 no.6
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    • pp.12-23
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    • 2018
  • In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

The Effect of Upstream Disturbances on the Performance of Swing Check Valves (상류측 교란요소가 스윙형 역지밸브의 성능에 미치는 영향)

  • Song, Seok-Yoon;Yoo, Seong-Yeon
    • The KSFM Journal of Fluid Machinery
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    • v.10 no.1 s.40
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    • pp.41-48
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    • 2007
  • The effect of the upstream flow conditions on the disc stability of the swing check valves was investigated at various upstream flow disturbance sources and distances from the tested check valves. The experimental loop was designed and installed to measure the disc positions, disc back stop load, and differential pressure at flow velocities lot 3 inch and 6 inch swing check valves. The selected disturbance sources are elbow and globe valve. The effect of the disc fluctuation is different depending on the type of disturbance and the distance between the disturbance and the check valve. Disturbances generated by elbow and globe valve located upstream from check valve create greater and more violent disc motion than uniform flow.

Effects of Air Pressures on the Physiology of Silkworm, Bombyx mori L. (공기압력이 잠체생리에 미치는 영향)

  • Kim, Nak-Jung;Shoh, Hae-Ryong
    • Journal of Sericultural and Entomological Science
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    • v.7
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    • pp.27-37
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    • 1967
  • 본 실험은 공기압력이 잠체생리에 미치는 영향을 알고자 수행되었으며 요약하면 다음과 같다. 1. 잠란 부화에 대하여 미치는 공기압력의 영향은 잠품종간에는 차가 없다. 2. 대기압에서 차가 적은 고압 (1 Pound/inch sguare) 또는 저압 (1 Pound/inch sguare)은 부화를 좋게하나, 압력이 클수록 처리시간이 길수록 부화에 나쁜 영향을 미친다. 3. 압력은 견중, 견층비율, 상견비율에 영향을 미치며 영향을 미치며 대기압에서 차가 클수록 처리시간이 길수록 악영향을 미친다. 4. 압력은 잠아체력을 약화시키며 저압은 특히 해롭다. 5. 잠아조직(잠체, 견사선, 소화기)간에 있어서 지방성분에 현저한 차이가 있으며, 잠체조직에서 견사선으로 이동하는 지방성분은 그 량이 적다. 6. 견형성에 있어서 각성분(탄수화물, 지방, 단백질, 회분)은 서로 밀접한 관계가 있다. 7. 압력은 화아일에 영향을 미치며 저압은 화아시간을 연장, 고압은 단축시킨다. 따라서 자웅간화아일 조절을 압력에 의해 할 수 있다. 8. 잠체생리에 미치는 환경요인은 온도, 습도, 광선뿐만 아니고 압력도 큰 영향을 미친다.

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Eye-Gaze Interaction On Computer Screen Evaluation

  • Ponglangka, Wirot;Sutakcom, Udom
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.84-88
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    • 2005
  • Eye gaze positions evaluation on computer screen uses the human eye as an input device for computer systems is that it gives low resolution. We proposes a method to determine the eye gaze positions on the screen by using two-eye displacements as the information for mapping, and the perspective projection is applied to map the displacements to a position on a computer screen. The experiments were performed on 20 persons and a 17-inch monitor is used with the screen resolution of 1024x768 pixels. Gaze detection error was 3.18 cm (RMS error), with screen is divided into 5x8 and 7x10 positions on a 17-inch monitor. The results showed 100% and 96% correction, respectively.

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Size Effect on Quench Development in Au/YBCO Films (Au/YBCO 박막의 크기가 퀜치 거동에 미치는 영향)

  • Kim, H.R.;Yim, S.W.;Oh, S.Y.;Hyun, O.B.
    • Progress in Superconductivity
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    • v.9 no.2
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    • pp.188-192
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    • 2008
  • We investigated the size effect on quench development in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current, and immersed in liquid nitrogen during the experiment. After the initial rapid rise, the resistance increased moderately and then slowly. In 4 inch-diameter meander lines, the period during which the resistance increased moderately was considerably longer than in 2 inch-diameter line. Moderate increase of resistance was originated from quench propagation. The film temperature was about 180 K at the point when the propagation was completed. The rate of resistance increase after the quench completion was not affected by the film size.

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