• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.611-616
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• 2004

In this study, microfabrication of a micro-arcjet nozzle with Fifth-harmonic generation Nd：YAG pulses (wavelength 213 nm) and its thrust performance tests were conducted. A micro-arcjet nozzle was machined in a 1.2 mm thick quartz plate. Sizes of the nozzle were 0.44 mm in width of the nozzle exit and constrictor diameter of 0.1 mm. For an anode, a thin film of Au (~100 nm thick) was deposited by DC discharge PVD in vacuum on divergent part of the nozzle. As for a cathode, an Au film was also coated on inner wall surface. In operational tests, a stable discharge was observed for mass flow of 1.0mg/sec, discharge current of 6 ㎃, discharge voltage of 600 V, or 3.6 W input power (specific power of 3.6 MW/kg). In this case, plenum pressure of the discharge chamber was 80 ㎪. With 3.6 W input power, thrust obtained was 1.4 mN giving specific impulse of 138 sec with thrust efficiency of 24 %.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.74-79
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• 1994

The characteristics of the type I and type II SHG in LiB305 crystals grown by TSSG method have been investigated using 1064 nm beam from a Q-switched Nd:YAG laser. The measured phase matching angles and angular acceptance bandwidths were $\theta_m=90^{\circ}, \phi_m=11.6^{\circ}$, <$\delta\theta_{int}L_{1/2}=3.3^{\circ}-cm^{1/2}, \theta\phi_{int}L=0.27^{\circ}-cm^{1/2}$ for type I SHG and $\theta_m=20^{\circ}, \phi_m=90^{\circ}$, TEX>$\delta\theta_{int}L_=0.65^{\circ}-cm, \theta\phi_{int}L^{1/2}=3.5^{\circ}-cm^{1/2}$ for type II SHG, respectively. Thp. type I NCPM temperature of 1064 nm beam was found to be $149^{\circ}C$ with the temperature bandwidth $\DeltaTL$of $4.8^{\circ}C-cm$. An energy conversion efficiency of about 1.8% with 2.6 mm thick LBO crystal at an incident power of TEX>$171 MW/\textrm{cm}^2$ was demonstrated. The measured $d_{32} was 0.74\pm0.05 pm/V$..

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.432-438
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• 2001

In this paper, after applying Defected Ground Structure(DGS) to DC block, changes of gap and length of λ/4 coupled line are investigated by EM simulation and fabrication. As a result, on condition of the same output with the case using typical DC block, the gap between λ/4 coupled line is widen from 0.1 mm to 0.46 mm by 0.36 mm and the length of λ/4 coupled line gets shorter from 17.7 mm to 13.2 mm by 4.5 mm. Also three type power amplifiers using blocking capacitor, typical DC block and DGS DC block are fabricated and investigated. At first, when S parameter characteristics of each amplifier are considered at frequency band of 3.2 +-0.O5 GHz, every amplifier has similar characteristics of gain and S parameter. Second when the output power of amplifiers is 25 dBm after putting CW signal of 3.2 GHz into three type amplifiers, the difference of dominant signal and 2nd harmonic signal using blocking capacitor, typical DC block and DGS DC block is each -44.83 dBc, -66.84 dBc and -64.33 dBc. Therefore harmonic characteristics of amplifiers using typical DC block and DGS DC block is almost same.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.61-68
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• 2010

In this work, a reduced size 20W quasi class-E Power Amplifier(PA) with defected ground structure load-network is presented for WCDMA base station application. Harmonic impedances required for the class E operation are satisfied by applying the dumbbell and the asymmetric spiral DGS. Open impedance for 2nd harmonic frequency which has the highest power and nearly short impedances for other higher order harmonics are provided by the proposed DGS load-network. The maximum Power Added Efficiency(PAE) of 70.2 % at the output power of 43.1 dBm with the saturated power gain of 12.7 dB is achieved by the proposed quasi class-E PA, which is comparable to the performance of the reference class-E PA. Total size of the proposed class-E PA is only $50{\times}50\;mm^2$ and much smaller than the conventional class-E PA that is loaded with a number of open stubs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Journal of Navigation and Port Research
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• v.28 no.10 s.96
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• pp.875-879
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• 2004

In this paper, sub-harmonic pumped(SHP) mixer using anti-parallel diode pair(APDP) is designed for 5 GHz band wireless communication system. Conventional mixers mix LO with RF, and obtain IF signal from the difference between LO and RF. As the frequency increase, LO signal requires higher LO power, better phase noise characteristics, more stable La. However, using APDP, the SHP mixer mixes the 2nd harmonics of LO signal. Therefore, the SHP mixer has an advantage that the LO signal frequency required for IF signal is reduced at half value of LO fundamental frequency. When LO power is 3 dBm, the conversion loss of manufactured SHP mixer is 12.83 dB. The isolation of LO/IF, 2LO/IF, RF/1F and LO/RF is 39.17 dB, 58 dB, 34 dB, and 67.9 dB. respectively. For this case, IP3 at input is 8 dBm.

• Polymer(Korea)
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• v.25 no.6
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• pp.803-810
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• 2001

A nonlinear optical hyperbranched polyester (PE-Azo/Hyper) was synthesized from 4-[N,N-bis(hydroxyethyl)amino-4'-formyl] azobenzene and cyanoacetic acid by a Knoevenagel polycondensation using 4-(dimethylamino) pyridine as a base. The resulting polymer was soluble in polar aprotic solvents such as N,N-dimethylformamide and 1-methyl-2-pyrrolidinone and could be processed into optical quality films by spin coating. The molecular weight was determined to be $M_w$=61,800 ($M_W/M_n{=1.86}$) by gel permeation chromatography using polystyrene as a standard. No melting point was detected by differential scanning Calorimeter, indicating that this polymer presents an amorphous state. It shows a glass transition temperature of $121^{\circ}C$. The second-order nonlinear optical coefficient $d_{33}$ of the poled polymer determined by the second harmonic generation at 1064 nm was 25.4 pm/V.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.2
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• pp.19-22
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• 2014

In this paper, Ku-band low phase noise oscillator using DSRR structure resonator based on metamaterial was proposed. To improve the phase noise of the oscillator, the proposed resonator consist of a DSRR strcuture based on metamaterial. The proposed resonator have a characteristic of $S_{11}$ is -0.25 dB, and $S_{21}$ in -44.59 dB at 14.67 GHz, respectively. At 14.67 GHz, the proposed Ku-band low phased oscillator achieves a output power of 2.03 dBm, $2^{nd}$ harmonic of -36.04 dBc, and phase noise of -130.63 dBc at the 100 kHz offset, respectively.