• Title/Summary/Keyword: 2nd harmonic

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Effect of Pulsed Nd:YAG Laser Energy on Crystallization in $Li_2O - Al_2O_3 - SiO_2$ Glass

  • Lee, Yong--Su;Kang, Won--Ho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.07a
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    • pp.104-109
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    • 2001
  • A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

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Real-Time Small Exposed Area $SiO_2$ Films Thickness Monitoring in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis

  • Jang, Hae-Gyu;Nam, Jae-Uk;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.320-320
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    • 2013
  • Film thickness monitoring with plasma impedance monitoring (PIM) is demonstrated for small area $SiO_2$ RF plasma etching processes in this work. The chamber conditions were monitored by the impedance signal variation from the I-V monitoring system. Moreover, modified principal component analysis (mPCA) was applied to estimate the $SiO_2$ film thickness. For verification, the PIM was compared with optical emission spectroscopy (OES) signals which are widely used in the semiconductor industry. The results indicated that film thickness can be estimated by 1st principal component (PC) and 2nd PC. Film thickness monitoring of small area $SiO_2$ etching was successfully demonstrated with RF plasma harmonic impedance monitoring and mPCA. We believe that this technique can be potentially applied to plasma etching processes as a sensitive process monitoring tool.

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Wavelet-based Pitch Detector for 2.4 kbps Harmonic-CELP Coder (2.4 kbps 하모닉-CELP 코더를 위한 웨이블렛 피치 검출기)

  • 방상운;이인성;권오주
    • The Journal of the Acoustical Society of Korea
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    • v.22 no.8
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    • pp.717-726
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    • 2003
  • This paper presents the methods that design the Wavelet-based pitch detector for 2,4 kbps Harmonic-CELP Coder, and that achieve the effective waveform interpolation by decision window shape of the transition region, Waveform interpolation coder operates by encoding one pitch-period-sized segment, a prototype segment, of speech for each frame, generate the smooth waveform interpolation between the prototype segments for voiced frame, But, harmonic synthesis of the prototype waveforms between previous frame and current frame occur not only waveform errors but also discontinuity at frame boundary on that case of pitch halving or doubling, In addtion, in transition region since waveform interpolation coder synthesizes the excitation waveform by using overlap-add with triangularity window, therefore, Harmonic-CELP fail to model the instantaneous increasing speech and synthesis waveform linearly increases, First of all, in order to detect the precise pitch period, we use the hybrid 1st pitch detector, and increse the precision by using 2nd ACF-pitch detector, Next, in order to modify excitation window, we detect the onset, offset of frame by GCI, As the result, pitch doubling is removed and pitch error rate is decreased 5.4% in comparison with ACF, and is decreased 2,66% in comparison with wavelet detector, MOS test improve 0.13 at transition region.

Surface Modification of Polymethyl methacrylate(PMMA) by Laser Surface Treatment for Microfluidic Chip (유체소자 성능향상을 위한 Polymethyl methacrylate(PMMA)의 레이저 표면처리)

  • Shin, Sung-Kwon;Lee, Sang-Don;Lee, Cheon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.2
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    • pp.334-337
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    • 2007
  • After the advent of micro-Total Analysis Systems(${\mu}-TAS$) based on silicon various polymer for microfluidic chip has been studied. Polymer materials for microfluidic compared with silicon and glass which were traditional materials of a microfluidic chip, have the advantages of economical efficiency simple manufacturing process and wide materials selectivity corresponding to fluids. Surface energy of polymers we, however lower than silicon or glass. To overcome this problem, various surface modification methods have been investigated. The surface modification using laser has the advantage of the simple experiment that only directly irradiated laser beam on the material surface in the air. This work discuss the surface modification of polymethly methacrylate(PMMA) by 4th harmonic Nd:YAG laser (${\lambda}266nm$, pulse) treatment. After the laser treatment, the PMMA surface was investigated using a contact angle measuring instrument. The contact angle was decreased with a increase of the surface oxygen content. This result means the surface energy of PMMA was increased by the laser treatment without changing of its bulk characteristics.

Crystal Growth and Second Harmonic Generation of YCa$_4$O$({BO_3})_3$ (YCa$_4$O$({BO_3})_3$ 단결정 성장 및 2차고조파 발생)

  • Yu, Young-Moon;A. Ageyev;Jeong, Suk-Jong
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.88-89
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    • 2000
  • The properties for self-frequency doubling (SFD) is unique phenomena for a small number of special single crystals. It is known that there are serious limitations to vary the concentration of active ions, for example high doping of active ions from 1 to 50 atomic %, in nonlinear materials. Until now, the Nd:YAl$_3$(BO$_3$)$_4$ (YAB) and Nd:(Ce,Gd)Sc$_3$(BO$_3$)$_4$ (CSB) crystals with high doping rates are well studied for the application of SFD purpose. They have much useful SFD properties, but also have big problems in crystal growth. In case of YAB crystal, it can be grown by solution melt method with very low growth rates and easy occurrence of inclusions. In case of CSB crystal, it has optically heterogeneity problems because of disarrangement of ions in huntite structure [1]. These problems make above crystals not so attractive for optical applications. Some popular nonlinear materials, such as LiNbO$_3$(LN), KTiOPO$_4$(KTP), LiB$_3$O$_{5}$ (LBO) crystals, are impossible to substitute by Rare Earth activators because of their crystallo-chemical problems of structure. When we dope active ions with the requisite concentrations for laser generation, it results in decreasing of optical quality of crystals or destroying of acentrosymmetric structure. (omitted)d)

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Catalytic growth of single wall carbon nanotubes by laser vaporization and its purification and The carbon nanotube growth on the Si substrate by CVD method

  • Lee, Sung won;Jung in Sohn;Lee, Seonghoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.213-213
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    • 2000
  • Direct laser vaporization of transition-metal(Co, Ni)/graphite composite pellet produced single wall carbon naotubes(SWNT) in the condensing vapor in a heated flow cylinder-type tube furnace, Transition metal/graphite composite pellet target was made by mixing graphite, Co, and Ni in 98:1:1 atomic weight ratios, pressing the mixed powder, and curing it. The target was placed in a tube furnace maintained at 1200$^{\circ}C$ and Ar inert collision gas continuously flowed into the tube. The 2nd harmonic, 532nm wavelength light from Nd-YAG laser was used to vaporize the tube. The carbon nanotubes produced by the laser vaporization were accumulated on quartz tube wall. The raw carbon nanotube materials were purified with surfactants(Triton X-100) in a ultrasonicator. These carbon nanotubes were analyzed using SEM, XRD, and Raman spectroscopic method. The carbon nanotube growth on the Ni-patterned Si substrate was investigated by the CVD process. Transition-metal, Ni and CH4 gas were used as a catalyst and a reactant gas, respectively. The structure and the phonon frequencies of the carbon nanotubes formed on the patterned Si substrate were measured by SEM and Raman spectrometer.

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Continuous and Pulsed Laser Induced Copper Deposition on Silicon(Si) from Liquid Electrolyte (전해질 용액내의 실리콘 단결정 표면에서 레이저로 유기되는 구리 침착)

  • 유지영;안창남;이상수
    • Korean Journal of Optics and Photonics
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    • v.3 no.1
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    • pp.50-54
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    • 1992
  • Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10\mu\textrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, \lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.

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Design of 3MW Class Outer Rotor Type PMSG for Wind Turbine (풍력발전용 3MW급 외부회전자형 영구자석 동기발전기 설계)

  • Kim, Tae-Hun
    • New & Renewable Energy
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    • v.6 no.4
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    • pp.41-49
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    • 2010
  • Over the last decade, wind turbine industry has rapidly increased around world. These days many parts of the wind generators are induction generator. But it has some problems such as gearbox failure, rotor excitation and maintenance. Thus many manufacturers are considered permanent magnet synchronous generator named PMSG and direct drive. PMSG uses NdFeB magnet has many the advantage compare with induction generator. In this study, 3MW class outer rotor type PMSG for wind turbine is proposed. The generator features 2.6m stator outer radius, 1200mm stator length, 81 pole pairs, 14 rated rpm, 42kN/$m^2$ shear force density and 94.2% efficiency. Design and analysis generator using FEM program. Then calculate and derivate no load voltage, losses, conductor temperature. To reduce total harmonic distortion and cogging torque, the stator is applied the stator skewing. And to evaluate the designed generator, compare with other generators by active mass per rating torque and torque density.

Etching of the PDP barrier rib material using laser beam (레이저빔에 의한 PDP 격벽 재료의 식각)

  • Ahn, Min-Young;Lee, Kyoung-Cheol;Lee, Hong-Kyu;Lee, Sang-Don;Lee, Cheon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.526-532
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    • 2000
  • The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

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Design of a GaN HEMT 4 W Miniaturized Power Amplifier Module for WiMAX Band (WiMAX 대역 GaN HEMT 4 W 소형 전력증폭기 모듈 설계)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Heo, Yun-Seong;Yeom, Kyung-Whan;Kim, Kyoung-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.162-172
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    • 2011
  • In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.