• Journal of the Korean earth science society
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• v.30 no.2
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• pp.153-164
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• 2009

We examined the regional 1-D deep resistivity structure of the Korean Peninsula using MT data acquired at seven sites located in the Kyongsang Basin and Kyonggi Massif. At the sites located in the Kyongsang Basin, surrounding sea distorts observed MT response and hence this distortion, so called "sea effect", is corrected using an iterative tensor stripping method. The 1-D layered inversion results for the seven MT sites reveal 4 layered structure, which is composed of 1) near surface layer, 2) upper crust, 3) lower crust and upper mantle, and 4) asthenosphere from the surface downward. Conrad interface, which is a boundary between upper and lower crust, is distinctly identified beneath all the MT sites. Conrad interface depth is estimated to about be 17km in the Kyongsang Basin and about 12km in the Kyonggi Massif, while the upper crust of the Kyongsang Basin is about 5 times more resistive than that of the Kyonggi Massif. Finally, asthenosphere is inferred to exist below a depth of approximately 100km with a resistivity of 200-300 ohm-m.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.267-272
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• 2007

Uiseong subbasin belonging to Kyungsang basin resulted from volcanic activity in the late Cretaceous. In this study, we carry out MT and gravity survey at the Hwasan caldera, which was formed of volcanic and abyssal rocks complex, then analyze and identify geological substructure. Potential survey such as gravity and magnetic survey has been mainly carried out in former studies, so depth information for understanding substructure was not enough. To complement a potential survey, we use MT method, which has high vertical resolution. Moreover we make a simple 2D model comparing with former study. The result of MT and gravity 2D modeling shows that this area is roughly composed of 3 layers; The bottom layer is a basement. In the second layer, intrusive rocks having high resistivity is placed along the ring faults and the sedimentary layer of low resistivity is inside caldera. The highest layer is alluvium. To comprehend the 3D structure of the Hwasan caldera, we perform 3D gravity inversion, and construct the 3D model from the result of 3D gravity inversion. MT responses are calculated by using the constructed 3D model and the 3D model of the Hwasan caldera's structure is suggested after comparing the calculated values with the observed values at MT line.

• Geophysics and Geophysical Exploration
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• v.19 no.2
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• pp.59-66
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• 2016

The electrical resistivity method is an effective geophysical tool to detect subsurface contamination because the contaminated zones show generally lower electrical resistivity. In this study, the electrical resistivity surveys were applied to a waste landfill site to image the subsurface structure around the landfill and to identify the contaminated zones. First, the dipole-dipole 2D resistivity surveys were conducted along the boundaries of landfill to define the developed contaminated zones. Then the crosshole resistivity tomography was applied to confirm the suspected contaminated zones at depth. The results of drilling and geochemical analysis of ground water supported that the low resistivity zones coincide well with the contaminated zones and the leachate pathways could be delineated effectively from the resistivity survey.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Geophysics and Geophysical Exploration
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• v.12 no.1
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• pp.33-40
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• 2009

In field surveys using the dipole-dipole electrical resistivity method, we often encounter negative apparent resistivity. The term 'negative apparent resistivity' refers to apparent resistivity values with the opposite sign to surrounding data in a pseudosection. Because these negative apparent resistivity values have been regarded as measurement errors, we have discarded the negative apparent resistivity data. Some people have even used negative apparent resistivity data in an inversion process, by taking absolute values of the data. Our field experiments lead us to believe that the main cause for negative apparent resistivity is neither measurement errors nor the influence of self potentials. Furthermore, we also believe that it is not caused by the effects of induced polarization. One possible cause for negative apparent resistivity is the subsurface geological structure. In this study, we provide some numerical examples showing that negative apparent resistivity can arise from geological structures. In numerical examples, we simulate field data using a 3D numerical modelling algorithm, and then extract 2D sections. Our numerical experiments demonstrate that the negative apparent resistivity can be caused by geological structures modelled by U-shaped and crescent-shaped conductive models. Negative apparent resistivity usually occurs when potentials increase with distance from the current electrodes. By plotting the voltage-electrode position curves, we could confirm that when the voltage curves intersect each other, negative apparent resistivity appears. These numerical examples suggest that when we observe negative apparent resistivity in field surveys, we should consider the possibility that the negative apparent resistivity has been caused by geological structure.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.165-172
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• 1992

To determine the effect of additions of trivalent and pentavalent ions on the electrical conductivity and sensing behaviour, indium and antimony were incorporated in tin oxide by the coprecipitation method. Antimony may be considered to enter the cassiterite structure as pentavalent ions, thermal energy could excite electrons from these ions into the conduction band. Similarly the indium ions would enter the lattice as $In^{3+}$ but could accept electrons from the valence band, thereby becoming monovalent or divalent. These phenomena, however, how the potential barrier existing $SnO_{2}$ by addition of two kinds of ions could influence on the sensing behaviour in comparison with their influence on the resistivity were observed.

• Journal of the Korean GEO-environmental Society
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• v.16 no.8
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• pp.21-35
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• 2015

Electrical resistivity survey (2D and 3D) were employed for detection of possible weak zone of core zones of three central core earth-rockfill dams in Korea. In the 2D results, the core zones is lower resistivity zone with less than $50{\sim}400ohm{\cdot}m$, and the basement is relatively higher resistivity zone with over $1,000ohm{\cdot}m$. In the 3D results, especially, the weak zone with under $100ohm{\cdot}m$ was detected spatial distribution area in the dam. We also drilled boreholes to collect soil samples of core zones of each dam. Water was not used during boring, because water for rotary wash boring could cause structural damages in earth dams. We found that the soil samples of core zones from all of the boreholes correspond to CL (USCS), but we also found that the fluidized or water-saturated soil samples were found in lower resistivity zones. Therefore, the electrical resistivity survey and drilling method without water are a quick and efficient method for structural-health evaluation which is detection of possible weak zones in earth core rockfill dams.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.700-705
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• 1997

Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.

• Journal of the Korean earth science society
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• v.32 no.6
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• pp.548-559
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• 2011

3-D Multi-geophysical surveys were carried out around the Hwasan caldera at the Euisung Sub-basin. To overcome the limitations of resolutions in previous studies, dense gravity data and magnetotelluric (MT) data were obtained and analyzed. In this study, the independent inversion models from gravity and MT data were integrated using correlation and classification approaches for 3-D imaging of the geologic structures. A Structure Index (SI) method was proposed and applied to the integration and classification analyses. This method consists of Type Angle (TA) and Type Intensity (TI) values, which are estimated by the spatial correlation and abnormality of the physical properties. The SI method allowed the classification analysis to be effectively performed. Major findings are as follows: 1) pyroclastic rocks around the central area of the Hwasan caldera with lower density and resistivity than those of neighboring regions extended to a depth of around 1 km, 2) intrusive igneous rocks with high resistivity and density were imaged around the ring fault boundary, and 3) a basement structure with low resistivity and high density, at a depth of 3-5 km, was inferred by the SI analysis.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.36-45
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• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.