• Title/Summary/Keyword: 2D-nano

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A Review on Transfer Process of Two-dimensional Materials

  • Kim, Chan;Yoon, Min-Ah;Jang, Bongkyun;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
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    • v.36 no.1
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    • pp.1-10
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    • 2020
  • Large-area two-dimensional (2D) materials synthesized by chemical vapor deposition on donor substrates are promising functional materials for conductors, semiconductors, and insulators in flexible and transparent devices. In most cases, 2D materials should be transferred from a donor substrate to a target substrate; however, 2D materials are prone to damage during the transfer process. The damages to 2D materials during transfer are caused by contamination, tearing, and chemical doping. For the commercialization of 2D materials, a damage-free, large-area, and productive transfer process is needed. However, a transfer process that meets all three requirements has yet to be developed. In this paper, we review the recent progress in the development of transfer processes for 2D materials, and discuss the principles, advantages, and limitations of each process. The future prospects of transfer processes are also discussed. To simplify the discussion, the transfer processes are classified into four categories: wet transfer, dry transfer, mechanical transfer, and electro-chemical transfer. Finally, the "roll-to-roll" and "roll-to-plate" dry transfer process is proposed as the most promising method for the commercialization of 2D materials. Moreover, for successful dry transfer of 2D materials, it is necessary to clearly understand the adhesion properties, viscoelastic behaviors, and mechanical deformation of the transfer film used as a medium in the transfer process.

Comparison of Etching Rate Uniformity of $SiO_2$ Film Using Various Wet Etching Method ($SiO_2$막의 습식식각 방법별 균일도 비교)

  • Ahn, Young-Ki;Kim, Hyun-Jong;Sung, Bo-Ram-Chan;Koo, Kyo-Woog;Cho, Jung-Keun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.2 s.15
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    • pp.41-46
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    • 2006
  • Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

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Temperature-dependent photoluminescence study on aluminum-doped nanocrystalline ZnO thin films by sol-gel dip-coating method

  • Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Kim, Soaram;Leem, Jae-Young
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.131-133
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    • 2012
  • The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

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Molecular interactions between pre-formed metal nanoparticles and graphene families

  • Low, Serena;Shon, Young-Seok
    • Advances in nano research
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    • v.6 no.4
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    • pp.357-375
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    • 2018
  • Two dimensional (2D) atomic layered nanomaterials exhibit some of the most striking phenomena in modern materials research and hold promise for a wide range of applications including energy and biomedical technologies. Graphene has received much attention for having extremely high surface area to mass ratio and excellent electric conductivity. Graphene has also been shown to maximize the activity of surface-assembled metal nanoparticle catalysts due to its unique characteristics of enhancing mass transport of reactants to catalysts. This paper specifically investigates the strategy of pre-formed nanoparticle self-assembly used for the formation of various metal nanoparticles supported on graphene families such as graphene, graphene oxide, and reduced graphene oxide and aims at understanding the interactions between ligand-capped metal nanoparticles and 2D nanomaterials. By varying the functional groups on the ligands between alkyl, aromatic, amine, and alcohol groups, different interactions such as van der Waals, ${\pi}-{\pi}$ stacking, dipole-dipole, and hydrogen bonding are formed as the 2D hybrids produced.

Fabrication of Lightweight Flexible c-Si Shingled Photovoltaic Modules for Building-Applied Photovoltaics (건물 부착형 고경량 유연성 슁글드 태양광 모듈)

  • Minseob, Kim;Min-Joon, Park;Jinho, Shin;Eunbi, Lee;Chaehwan, Jeong
    • Current Photovoltaic Research
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    • v.10 no.4
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    • pp.107-110
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    • 2022
  • Lightweight and flexible photovoltaic (PV) modules are attractive for building-integrated photovoltaic (BIPV) applications because of their easy construction and applicability. In this study, we fabricated lightweight and flexible c-Si PV modules using ethylene tetrafluoroethylene (ETFE) front cover and shingled design string cells. The ETFE front cover instead of glass made the PV modules lighter in weight, and the shingled design string cells increased the flexibility. Finally, we fabricated a PV module with a conversion power of 240.08 W at an area of 1.25 m2 and weighed only 2 kg/m2. Moreover, to check the PV module's flexibility, we conducted a bending test. The difference of conversion power between the modules before and after bending shown was only 1.7 W, which showed a power reduction rate of about 0.7%.

Fabrication of High-power Shingled PV Modules Integrated with Bent Steel Plates for the Roof (절곡 강판 일체형 고출력 슁글드 태양광 모듈 제조)

  • Eunbi Lee;Min-Joon Park;Minseob Kim;Jinho Shin;Sungmin Youn
    • Current Photovoltaic Research
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    • v.11 no.2
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    • pp.54-57
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    • 2023
  • Recently, requirements for improving the convenience of constructing BIPV (Building Integrated Photo Voltaic) modules had increased. To solve this problem, we fabricated shingled PV modules integrated with bent steel plates for building integrated photovoltaics. These PV modules could be constructed directly on the roof without the installation structure. We found optimal lamination conditions with supporting structures to fabricate a module on a bent steel plate. Moreover, we applied a shingled design to PV modules integrated with bent steel plates to achieve a high electrical output power. The shingled module with bent steel plates shows 142.80 W of solar-to-power conversion in 0.785 m2 area.

Superconducting properties of MgB2 superconductors in-situ processed using various boron powder mixtures

  • Kang, M.O.;Joo, J.;Jun, B.H.;Kim, C.J.
    • Progress in Superconductivity and Cryogenics
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    • v.23 no.3
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    • pp.45-50
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    • 2021
  • In this study, the effect of the size of B powder on the critical current density (Jc) of MgB2 prepared by an in situ reaction process was investigated. Various combinations of B powders were made using a micron B, ball-milled B and nano B powders. Micron B powder was reduced by ball milling and the milled B powder was mixed with the micron B or nano B powder. The mixing ratios of the milled B and micron or nano B were 100:0, 50:50 and 0:100. Non-milled micron B powder was also mixed with nano powder in the same ratios. Pellets of (2B+Mg) prepared with various B mixing ratios were heat-treated to form MgB2. Tc of MgB2 decreased slightly when the milled B was used, whereas the Jc of MgB2 increased with increasing amount of the milled B or the nano powder. The used of the milled B and nano B power promoted the formation MgB2 during heat treatment. In addition to the enhanced formation of MgB2, the use of the powders reduced the grain size of MgB2. The use of the milled and nano B powder increased the Jc of MgB2. The highest Jc was achieved when 100% nano B powder was used. The Jc enhancement is attributed to the high volume fraction of the superconducting phase (MgB2) and the large grain boundaries, which induces the flux pinning at the magnetic fields.

Fabrication of 2D Bravais Nano Pattern and Growth of ZnO Nano Rods with Photonic Crystal Effect (2차원 Bravais Lattice를 가지는 나노 패턴 제조 및 광결정 효과를 가지는 ZnO 나노 기둥 성장)

  • Kim, Tae-Un;Moon, Jong-Ha;Kim, Seon-Hoon;Kim, Doo-Gun;Kim, Jin-Hyeok
    • Korean Journal of Materials Research
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    • v.21 no.12
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    • pp.697-702
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    • 2011
  • Two-dimensional (2D) nano patterns including a two-dimensional Bravais lattice were fabricated by laser interference lithography using a two step exposure process. After the first exposure, the substrate itself was rotated by a certain angle, $90^{\circ}$ for a square or rectangular lattice, $75^{\circ}$ for an oblique lattice, and $60^{\circ}$ for a hexagonal lattice, and the $90^{\circ}$ and laser incident angle changed for rectangular and the $45^{\circ}$ and laser incident angle changed for a centered rectangular; we then carried out a second exposure process to form 2D bravais lattices. The band structure of five different 2D nano patterns was simulated by a beam propagation program. The presence of the band-gap effect was shown in an oblique and hexagonal structure. The oblique latticed ZnO nano-photonic crystal array had a pseudo-bandgap at a frequency of 0.337-0.375, 0.575-0.596 and 0.858-0.870. The hexagonal latticed ZnO nano-crystallite array had a pseudo-bandgap at a frequency of 0.335-0.384 and 0.585-0.645. The ZnO nano structure with an oblique and hexagonal structure was grown through the patterned opening window area by a hydrothermal method. The morphology of 2D nano patterns and ZnO nano structures were investigated by atomic force microscopy and scanning electron microscopy. The diameter of the opening window was approximately 250 nm. The height and width of ZnO nano-photonic crystals were 380 nm and 250 nm, respectively.