• 제목/요약/키워드: 2212 phase

검색결과 121건 처리시간 0.023초

Bi계 초전도 박막의 단결정 생성영역 (Phase Diagram of Single Crystal in Bi System)

  • 천민우;김태곤;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.327-328
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    • 2005
  • Bi-system thin films are prepared by ion beam sputtering technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure($PO_3$). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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$Bi_2Sr_2Ca_nCu_{n+1}O_x$ 박막의 단상 형성을 위한 열역학 해석 (Analysis of Thermodynamics for Formation of Single Phase in $Bi_2Sr_2Ca_nCu_{n+1}O_x$ Thin Films)

  • 천민우;박용필;김정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1208-1211
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    • 2003
  • High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

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스퍼터링 법과 증발 법으로 제작한 초전도 박막의 비교 (Comparison between Superconducting Thin Films Fabricated by Using the Sputtering and the Evaporation Method)

  • 천민우;박노봉;양승호;박용필;김혜정
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.39-42
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    • 2004
  • The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

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Y211 기판 위의 Bi-2212 후막의 후열처리 특성 (Annealing Characteristic of Bi-2212 thick Films on Y2l1 substrate)

  • 강형곤;임성훈;정동철;임성우;한병성
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.296-299
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    • 1999
  • Bi$_2Sr_2CaCu_2O$(Bi-2212) thick films were fabricated on Y2l1 substrate by screen printing method. And the samples were annealed in various atmospheres, respectively. Though samples had many voids, the sample annealed in N$_2$ ; O$_2$ = 1:0 atmosphere and the sample in N$_2$ : O$_2$ = 0:1 showed some Bi 2212 low phase in comparison to other samples. The thickness of Bi-2212 on Y2ll substrates was about 20 ${\mu}$m.

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열처리에 따른 BSCCO 용사피막의 초전도특성 (Superconductor characteristics of BSCCO spray films by Heat treatment)

  • 도형준;박경채
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2007년 추계학술발표대회 개요집
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    • pp.282-284
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    • 2007
  • The superconductor characteristics of BSCCO spray films by Heat treatment was studied. $Bi_2Sr_2CaCu_2O_x$(Bi-2212) is high-Tc superconductor(HTS) coatings have been prepared by Heat treatment. Where high current carrying capabilities are required and therefore thick film and bulk material are called for, the Bi2Sr2Ca1Cu2O8-d(Bi-2212)compound has evoleved as one of the most promising. and the Bi-2212 HTS coating layer is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating layer by partial melting process. The superconducting characteristics depends on the spray distance which was related to the spray particle melt. The Bi-2212 HTS layer consists of the whisker growth and secondary phase in 2212 layer were observed.

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후열처리 조건에 따른 Bi-2212 고온 초전도선의 임계전류 특성 변화 (Effect of after annealing on critical current of Bi-2212 HTS round wires)

  • 하동우;김상철;오재근;오상수;하홍수;송규정;고락길;김호섭;김태형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.91-92
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    • 2006
  • The important merit of Bi-2212/Ag wire is to apply cable as round wire state. Bi-2212 high Tc superconducting wires were fabricated in order to apply Rutherford cable near the future. Various Ag ratio from 0.22 to 0.42 of Ag tubes for PID (powder-In-Tube) process were used to investigate the workability and to prevent breakage of filaments during drawing. In order to find proper heat treatment condition, we investigated micro-structure of Bi-2212/Ag wires by using differential thermal analysis, XRD and SEM. The effect of atmosphere on the peritectic decomposition temperature of precursor was investigated. The shape of grain was observed by SEM to investigate Bi-2212 phase formation in filaments. The higher of Ag ratio of mono filament had the higher critical current density, Jc. The wire with 0.42 of Ag ratio showed 7,886 A/cm2 of Jc at 77K.

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c-axis Tunneling in Intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ Single Crystals

  • Lee, Min-Hyea;Chang, Hyun-Sik;Doh, Yong-Joo;Lee, Hu-Jong;Lee, Woo;Choy, Jin-Ho
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.260-260
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    • 1999
  • We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

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IBS 법으로 제작한 Bi 계 초전도 박막의 동시 증착 특성 (Characteristics of Co-deposition for Bi-superconductor Thin Film Using Ion Beam Sputtering Method)

  • 박용필;이준웅
    • E2M - 전기 전자와 첨단 소재
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    • 제10권5호
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    • pp.425-433
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    • 1997
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

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Bi 박막의 성막 특성에 관한 연구 (Study on the deposition Characteristics of Bi Thin Film)

  • 이희갑;박용필;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1071-1074
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    • 2002
  • This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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