• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.187-190
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• 1998

In this paper a probe for the' measurement of dielectric properties of dielectric sheet materials is designed and implemented as a coaxial air line type. Using the broadband impedance method with this measurement probe the dielectric constant and loss tangent of the glass-epoxy and teflon are determined in the frequency range of 0.1 - l.O[GHz] with the temperature variation from $25[^{\circ}C]$ up to $65[^{\circ}C]$. A measured relative dielectric constant of the glass-epoxy is 4.42 and a loss tangents is 0.019 relatively, and the relative dielectric constants of teflon is 2.17 and a loss tangents is 0.002 relatively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.71-74
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• 1993

In this paper, the permeability(${\mu}$$\sub$r′/, ${\mu}$$\sub$r"/), permittivity($\varepsilon$$\sub$r′/, $\varepsilon$$\sub$r"/) and absorption properties of Ferroxplana/Rubber composites were investigated. The composite specimens were prepared by molding and curing the mixtures of matrix rubber and Ni$_2$Y ferroxplana powders which were synthesized by coprecipitated method. The permeability(${\mu}$$\sub$r′/) of specimen was decreased in the range of 8∼12.5(GHz) and the permeability(${\mu}$$\sub$r"/) and Permittivity($\varepsilon$$\sub$r′/, $\varepsilon$$\sub$r"/) were increased. The optimum thickness of electromagnetic wave absorber (F/R=4, 1,200($^{\circ}C$) ), utilizing the Smith chart, was about 3.0(mm). The Figure of Merit was 93(%).

• Proceedings of the Korea Information Processing Society Conference
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• 2007.05a
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• pp.1473-1476
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• 2007

유비쿼터스 컴퓨팅과 유비쿼터스 네트워크가 다양하게 발전되고 활용됨에 따라 유비쿼터스 환경에서 LBS(위치 기반서비스) 관련 기술의 중용성도 높아지고 있다. 이런 LBS를 위한 기존의 대표적인 옥내 측위 시스템들을 알아보고, IEEE802.11b 규격의 2.4GHz RF의 RSSI와 거리와의 관계를 기반으로 TDOA를 이용한 방법과 Extended Kalman Filter를 이용한 방법의 측위 시스템을 구현하고 실험을 통한 실측 오차를 비교 분석한다.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• ETRI Journal
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• v.29 no.6
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• pp.725-735
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• 2007

This paper describes a line element planar antenna with three frequency bands. To obtain broadband characteristics, a modified planar antenna that has semi-elliptical elements based on the characteristics of a line element planar antenna is proposed and analyzed by the finite difference time domain method. Return loss characteristics are discussed as functions of the eccentricity values of semi-ellipse at each element. The broadbanding of the modified planar antenna is implemented based on the results. The planar antenna with three systems (an 800 MHz band cellular phone, a third-generation cellular phone, and a 2.4 GHz band wireless LAN system) is considered as an application example.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• Journal of the Korean Institute of Navigation
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• v.25 no.4
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• pp.455-460
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• 2001

본 연구에서는 방향성 결합기의 특성과 PIN다이오드의 특성을 이용하여 가변 감쇠기를 구현하였다. 기존의 Even-Odd Mode해석법이 아닌 간단한 2-port 기법으로 감쇠기를 분석하였으며, 산란 파라미터는 결합포트의 종단 임피던스가 동일한 경우와 동일하지 않은 경우에 있어서의 감쇠기의 동작특성을 평가하였다. 방향성 결합기의 결합포트는 가변종단을 HP사의 전류제어 소자인 HSMP-3864 PIN다이오드를 사용하였다. 구현된 가변감쇠기는 PCS 송신주파수 1.9 GHz에서 감쇠 범위가 30 dB 이상, 삽입손실 5 dB 이하, 입·출력 반사계수 -25 dB 이하의 특성을 나타내었으며, 이는 PCS와 셀룰러 이동통신 기지국용 전력 증폭기를 온도 등과 같은 외부의 환경변화에 따라서 이득을 가변 시킬 수 있으며, 또한 증폭기의 선형성을 향상시킬 것으로 사료된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.872-876
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• 2006

This study was made to examine the electromagnetic interference(EMI) shielding effect (SE) of multilayered thin films in which indium-tin oxide(ITO) and Ag were deposited alternately from 3layer to 9 layer on Poly Methyl Meth Acrylate(PMMA) substrate at room temperature using a PF sputtering. We measured optical and electrical characteristics by UV-spectrometer and 4 point probe. The measurement of EMI SE in frequency range from 50MHz to 1.5GHz was performed by using ASTM D4935-89 method. We compared the measured EMI SEs with theoretical simulation data. We obtained relatively low resistivity and high transmittance from the EMI SE multilayers. In this study, we obtain good optical electrical characteristics with a minimun transmittance of about 60% at 550nm wavelength and sheet resistance of $2{\sim}3ohm/sq$., respectivity. Measured EMI SEs were over 50dB and similar to theoretical simulation data.

• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.243-245
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• 2005

This paper presents a wired and wireless linked remote control system. Ethernet based network communication is used for long distance management and 2.4GHz RF network is adopted for the local area communication between the main network and the ballast. For the effective remote control and management including dimming using wired and wireless linked digital communication networks, control circuit of the ballast is implemented with fully digital circuit using MCU and EPLD. In this paper, the proper frame structure is proposed for the digital-remote lighting-control system and the detailed system configurations including fully digital controlled ballast for the induction lamp are described.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.