• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.1-6
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• 2000

X-선 노광용 마스크의 재료로서 SiC와 Ta박막을 각각 ECR플라즈마 CVD, 스퍼터링 장비를 이용하여 증착한 뒤 잔류응력, 미세구조, 표면상태, 그리고 화학적 결합상태 등을 조사하였고, ECR etching system을 이용하여 Ta박막 미세 식각 특성을 연구하였다. SiC박막은 $N_2$분위기에서 RTA를 통하여 X-선 투과막 물질로서 필요한 적절한 인장응력을 변화 시킬 수 있었고, 공정 압력을 조절하여 증착한 Ta박막은 높은 밀도와 우수한 표면 평활도를 가지고 시간과 온도에 따른 응력의 안정성이 좋은 X-선 흡수체를 증착할 수 있었다. 또한 Cl 플라즈마는 흡수체 물질 Ta에 대해 좋은 식각특성을 보였고, two-step 식각을 통해 microloading effect를 억제함으로써 0.2 $\mu\textrm{m}$이하의 미세패턴을 식각해 낼 수 있었다.

• 대한전자공학회논문지SD
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• 제41권5호
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• pp.37-42
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• 2004

본 논문에서는 선비정질화, 저에너지 이온 주입, 이중 열처리 공정을 이용하여 p/sup ＋/-n 박막 접합을 형성하였다. Ge 이온을 이용하여 결정 Si 기판을 선비정질화하였다. 선비정질화된 시편과 결정 기판에 p-형 불순물인 BF₂이온을 주입하여 접합을 형성하였다. 열처리는 급속 열처리 (RTA : rapid thermal anneal) 방법과 850℃의 노 열처리 (FA : furnace anneal) 방법을 병행하였다. 두 단계의 이중 열처리 방법으로 네 가지 조건을 사용하였는데, 이는 RTA(750℃/10초)＋Ft, FA＋RTA(750℃/10초), RTA(1000℃/10초)＋F4 FA＋RTA(1000℃/10초)이다. Ge 선비정질화를 통하여 시편의 접합 깊이를 감소시킬 수 있었다. RTA 온도가 1000℃인 경우에는 RTA보다는 FA를 먼저 수행하는 것이 접합 깊이(x/sub j/), 면저항(R/sub s/), R/sub s/ x/sub j/, 누설 전류 등의 모든 면에서 유리함을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.478-486
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• 1995

Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• 한국자기학회지
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• 제1권1호
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• pp.12-16
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• 1991

F $e_{76-x}$ C $u_{1}$M $o_{x}$S $i_{14}$ $B_{9}$(x=2, 3)비정질합금의 열처리에 따른 자기적특성과 미세구조의 변화에 대해 조사하였다. 이들합금을 500 .deg. C에서 1시간 열처리한 경우, 결정화에 의해 약 20mm의 입경을 갖는 .alpha. -Fe의 초미세결정립 조직으로 변태하였으며, 이때 얻어진 합금의 실효투자율은 8~9*$10^{3}$, 보자력은 3~4A/m정도이었다. 초미세결정합금의 연자기특성을 크게 좌우하는 요소중의 하나가 입경의 크기이며, 우수 한 자성특성을 얻기위해서는 결정립의 미세화가 요구되는 것으로 알려져 있다. 이에 따라 Fe-Cu-Mo-Si-B계 합금의 경우보다 우수한 연자기특성을 얻기 위하여 2단 열처리를 행하였다. 즉, 400 .deg. C에서 1~3시간 저온 열처리 후 500 .deg. C에서 1시간 고온열처리를 하면 입경이 10nm이하로 감소하였으며, 이때 얻어진 합금의 실효투자율은 1.2~ 1.7*$10^{4}$이고 보자력은 ~2A/m이었다. 이와 같은 연자기특성의 향상은 .alpha. -Fe(Si)결정립의 미세화에 따른 평균결정자기이방성 의 감소에 기인하는 것으로 믿어진다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1666-1669
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• 1996

To produce low loss amorphous molding cores which are used as choke cores in high efficiency electronic ballast for Metal Halide Lamp, the magnetic properties of amorphous molding cores were investigated with the various fabrication methods. The results are as follows : (1) The total weight of molding core gradually increased as molding time increases. (2) The magnetic properties($B_{10}$, $B_r$, $B_t/B_s$, $H_c$, $W_c$) of molding core drastically deteriorated. This is presumably due to the compressive stress imposed on amorphous core occurred during epoxy curing treatment. (3) Two step annealing process(curing+field annealing) was more or less effective to recover the damaged properties.

• 센서학회지
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• 제27권4호
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• pp.264-268
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• 2018

Vertically-aligned $TiO_2$ nanotube electrodes have attracted considerable attention for applications in solar cells, catalysts, and sensors, because of their ideal structure for electron transport and electrolyte diffusion. Here, we prepare vertically-aligned $TiO_2$ nanotube electrodes using a two-step anodization process. The prepared $TiO_2$ nanotube electrodes exhibit uniform pore structures with an inner diameter of ~80-90 nm and wall thickness of ~20-25 nm. In addition, they exhibit an anatase crystal phase after a high-temperature annealing. The annealed $TiO_2$ nanotube electrodes are applied in dye-sensitized solar cells (DSSCs) as photoanodes. The fabricated DSSC exhibits conversion efficiencies of 3.46 and 2.15% with liquid- and gel-type electrolytes, respectively.

• 한국세라믹학회지
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• 제27권1호
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• pp.79-85
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• 1990

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.130-131
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• 2005

In the era of submicron devices, super ultra thin gate oxide characteristics are required. Titanium silicide process has studied gate oxide reliability and dielectric strength characteristics as the composition of gate electrode. In this study the author observed process characteristics on MOS structure. In view point of the process characteristics of MOS capacitor, the oxygen & Ti, Si2 was analyzed by SIMS analysis on before and after annealing with 1,2 step silicidation, the Ti contents[Count/sec]of $9.5{\times}1018$ & $6.5{\times}1018$ on before and after 2'nd anneal. The oxygen contents[Count/sec] of $4.3{\times}104$ & $3.65{\times}104$, the Si contents[Count/sec] of $4.2{\times}104$ & $3.7{\times}104$ on before and after 2'nd anneal. The rms value[A] was 4.98, & 4.03 on before and after 2'nd anneal.