• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.155-160
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• 2010

The effect of process temperature of a final annealing step in the fabrication of phase change memory (PCM) devices was investigated. Discrete PCM devices employing $Ge_2Sb_2Te_5$ (GST) films as an active element were made in a pore-style configuration, and they were annealed at various temperatures ranging from 160 to $300^{\circ}C$. The behaviors of cell resistance change from SET resistance to RESET resistance were totally different according to the annealing temperatures. There was a critical annealing temperature for the fabrication of normal PCM devices and abnormal operations were observed in some devices annealed at temperatures lower or higher than the critical temperature. Those influences of annealing temperature seem closely related to the thermal stability of a top electrode/GST/heating layer multilayer structure in the PCM devices.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.23-26
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• 2007

The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

• The Korean Journal of Rheology
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• v.10 no.2
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• pp.113-120
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• 1998

사출성형공정은 대표적인 고분자 가공공정으로 그 복잡한 특성으로 인하여 공정변 수를 최적화하는 것을 주로 경험에 의존해 왔다. 본 연구에서는 사출성형공정의 보압과정 중에 보압의 이력을 최적화하여 제품각 부분의 부피수축율차이를 최소가 되게 하는 최적화 시스템을 개발하였다. 최적화 알고리즘으로는 GA방법을 사용하였으며 본 연구에서 제안한 최적화 시스템으로 보압과정의 최적화를 수행한 결과 부피수축율의 차이가 현저히 감소하는 것을 알수 있었다. 특히 SA방법을 사용하는 경우 초기의 최적화 속도가 GA를 사용하는 경 우에 비해서 뛰어남을 알수 있었다. 또한 충전과정과 보압과정을 함께 최적화하여 보압과정 만 최적화한 결과와 비교하여 보았다.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.232-239
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• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Progress in Superconductivity
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• v.4 no.2
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• pp.176-179
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• 2003

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.14-17
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• 2016

Annealing as-grown electron-doped cuprates under a low oxygen-partial-pressure condition is a necessary step to achieve superconductivity. It has been recently found that the so-called protect annealing results in much better superconducting properties in terms of the superconducting transition temperature and volume fraction. In this article, we report on angle-resolved photoemission spectroscopy studies of a protect-annealed electron-doped cuprate $Pr_{0.9}La_{1.0}Ce_{0.1}CuO_4$ on annealing condition dependent superconducting and pseudo-gap properties. Remarkably, we found that the one showing a better superconducting property possesses almost no pseudo-gap while others have strong pseudo-gap feature due to an anti-ferromagnetic order.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.1
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• pp.23-26
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• 2009

Pt nanotubes with diameter of 200 nm were fabricated by simple and convenient method of Template-Wetting Process. Porous alumina membranes were prepared by 2 step anodic oxidation as the template. To improve wetting properties and lower surface energy, pt solution was mixed with polymer. Polymer was removed completely during annealing. Grain growth process of pt nanotubes during baking and furnace annealing was examined by FE-SEM and XRD.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.162-165
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• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.