• 제목/요약/키워드: 2-D nucleation and growth

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기울어진 GaAs(100) 기판 위에 성장된 InAs 박막 특성에 대한 As BEP 효과 (As BEP Effects on the Properties of InAs Thin Films Grown on Tilted GaAs(100) Substrate)

  • 김민수;임재영
    • 한국표면공학회지
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    • 제43권4호
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    • pp.176-179
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    • 2010
  • The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

용매열합성법을 통한 단분산된 ZnGa2O4 구형 입자의 제조 및 특성 (Facile synthesis and characteristics of monodispersed ZnGa2O4 microsphere via solvothermal method)

  • 우무현;강봉균;윤대호
    • 한국결정성장학회지
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    • 제26권3호
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    • pp.109-114
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    • 2016
  • 용매열합성법과 하소 과정으로 이루어진 두 단계 공정을 통해 단분산된 마이크로 크기의 구형 $ZnGa_2O_4$ 입자를 합성하였다. 합성된 3차원 구조의 구형 $ZnGa_2O_4$ 입자는 핵 생성과정에서 발생된 $ZnGa_2O_4$ 핵들이 자기 조립에 의해 형성된다. 이렇게 3차원 구조의 입자를 형성하는 원리인 '핵 성성'과 '자기 조립' 과정은 계면활성제인 PEG(polyethylene glycol)의 영향을 받는다. 그 이유는 계면활성제인 PEG의 농도가 임계응집농도(critical aggregation concentration)를 결정짓기 때문이다. 그리고 $ZnGa_2O_4$ 단상 합성을 위해 원료인 zinc acetate의 양을 조절했으며, 최적의 하소 조건을 결정하고자 TG-DTA를 통해 열적 거동을 확인했다. 또한 열처리 전 모체와 $900^{\circ}C$에서 1시간의 열처리 과정을 거친 산화물을 구성하는 작용기의 변화를 규명하기 위해 FT-IR을 측정하였다.

전열면의 특수표면화에 의한 열기기의 효율향상에 관하여 (Improved Heat Transfer Coefficient in Heat Exchanger by the Use of Specialized Heating Surface)

  • 임장순
    • 대한설비공학회지:설비저널
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    • 제8권3호
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    • pp.131-150
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    • 1979
  • Recently only a few correlations between various factors due to the different grades of surface roughness for the nucleate pool boiling have been proposed. The main purpose of this work is to test the validity of these types of correlations between related factors to nucleate pool boiling phenomena. The boiling experiments using distilled water were carried out at the heat flux ranging from $7.4\times10^4\;to\;2.4\times10^5kcal/m^2h$ on the sintered porous metal surface with the cavity diameter of 10, n, 40, 70, $100{\mu}$, respectively, at the atmospheric pressure, To determine the bubble sizes, number of nucleation sites, delay and growth time, frequency of bubble emission and rising velocities of bubbles, the high speed motion picture technique was employed. In the correlation $f{\propto}D_b^n$, where f denotes frequency of bubble emission and $D_b$ departure diameter, n, the power factor of $D_b$, have been found to be from -2 to -10/3. The correlation C in the correlation between heat flux q and density of nucleation sites $\frac{N}{A}$, $q=C(\frac{N}{A})^n$, was appeared to be more crucial than the power factor n. The correlation of the heat flux q to the temperature difference ${\Delta}T$ and the density of nucleation sites$\frac{N}{A}$, was proposed to be $$q-460{\Delta}T^{\frac{5}{4}}=K{\Delta}T{\frac{5}{3}}(\frac{N}{A})^{\frac{2}{3}}$$. The values of heat transfer coefficient obtained in this experiments for the porous sintered metal surface appeared to be very high in comparison with the formerly obtained results for the other surfaces.

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n-Si(111) 기판 위에 전기증착에 의한 Fe 박막의 성장과 구조적 특성 (Growth and Structural Properties of Fe Thin Films Electrodeposited on n-Si(111))

  • 김현덕;박경원;이종덕
    • 한국정보통신학회논문지
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    • 제10권9호
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    • pp.1663-1670
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    • 2006
  • 펄스 전기증착법에 의해 단결정 Fe 박막을 n-Si(111) 기판위에 직접 성장시켰다. CV 분석 을 통해 $Fe^{2+}n-Si(111)$ 계면은 쇼트키 장벽 형성에 따른 다이오드 특성을 가진다는 사실을 알 수 있었다. 또한 인가 전압에 따른 전기용량의 변화를 보여주는 Mott-Schottky chottky(MS) 관계식을 이용하여 전해질 내에서 n-Si(111) 기판의 flat-band potential(EFB)을 조사하였으며, 0.1M $FeCl_2$ 전해질 내에서 EFB와 산화-환원 전위는 각각 -0.526V 과 -0.316V 임을 알 수 있었다. Fe/n-Si(111) 계면반응 시, Fe 증착 초기 단계에서의 핵 형성과 성장 운동학은 과도전류 특성을 이용하여 조사하였으며, 과도전류 특성을 통해 Fe 박막의 성장모드는 "instantaneous nucleation and 3-dimensional diffusion limited growth"임을 알 수 있었다. 주파수가 300Hz, 최대 전압이 1.4V인 펄스 전압을 이용하여 n-Si(111) 기판위에 Fe를 직접 전기 증착 시켰으며, 형 성 된 Fe 박막은 단결정 ${\alpha}-Fe$로 Si 기판위에 ${\alpha}-Fe(110)/Si(111)$의 격자 정합성을 가지고 성장하였음을 XRD 분석을 통해 확인하였다.

Phase Diagrams and Stable Structures of Stranski-Krastanov Structure Mode for III-V Ternary Quantum Dots

  • Nakaima, Kazuno;Ujihara, Toru;Miyashita, Satoru;Sazaki, Gen
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.81-114
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    • 1999
  • The strain, surface and inerfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode an the Volmer-Wever (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which tow-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depnds on the lattice misfit.

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Carbide Grain Growth in Cemented Carbides

  • Mannesson, Karin;Agren, John
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.336-337
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    • 2006
  • During sintering of cemented carbides abnormal grain growth is often observed but cannot be understood from the classical LSW-theory. A model based on 2-D nucleation of new crystalline layers and a grain-size distribution function is formulated and the equations are solved numerically. Experimental studies and computer simulations show that the initial grain size distribution has a strong effect on the grain growth behavior. For example, a fine-grained powder can grow past a coarser powder.

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Bi2O3를 첨가한 8M KOH용액에서 다결정 Ag전극의 전기화학적 거동 (Electrochemical Behaviors of Polycrystalline Silver Electrodes in 8M KOH Solutions Containing Bi2O3)

  • 허태욱;공영경;정원섭
    • 전기화학회지
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    • 제8권1호
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    • pp.17-23
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    • 2005
  • $Bi_2O_3$를 첨가한 8M KOH용액에서 다결정 Ag전극의 전기화학적인 거동과 생성된 산화물들의 미세조직 변화를 분석하였다. $Bi_2O_3$를 첨가한 8M KOH용액에서 Ag 산화물뿐만 아니라 새로운 Ag-Bi-O화합물들이 생성되는 것을 알 수 있었다. Ag(I) 산화물 생성 전위 영역에서는 $Ag_2O$ 이외에, Ag-Bi-O 화합물이 핵 생성과 3D성장 과정에 의해서 생성되고, Ag(II)산화물 생성 전위 영역에서는 AgO뿐만 아니라 새로운 Ag-Bi-O화합물들이 핵 생성과 3D성장 과정에 의해서 생성되었다. Ag(I) 산화물 생성 전위에서 두 가지 형상의 Ag(I) 산화물이 생성되는 것을 SEM 조직에 의해 관찰하였다.

Binary Compound Formation upon Copper Dissolution: STM and SXPS Results

  • Hai, N.T.M.;Huemann, S.;Hunger, R.;Jaegermann, W.;Broekmann, P.;Wandelt, K.
    • Corrosion Science and Technology
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    • 제6권4호
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    • pp.198-205
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    • 2007
  • The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

Precipitation Stripping법에 의한 고순도 Oxalate 분말의 제조 (Preparation of High-purity Zinc Oxalate Powder by the Precipitation Stripping Method)

  • 이재천;이강인;유효신
    • 한국세라믹학회지
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    • 제29권12호
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    • pp.963-969
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    • 1992
  • This paper describes the feasibility for a direct production of zinc oxalate powders from zinc-loaded D2EHPA solutions combining the purification and the precipitation in one operation unit. This process has the potential as an alternative to conventional method for the synthesis of zinc oxide precursor particles from the hydrometal-lurgical processes. Zinc was extracted into D2EHPA in kerosene and then zinc-loaded D2EHPA solution was emulsified with oxalic acid-HCl solution to precipitate zinc oxalate powder, which was readily calcined to zinc oxide. The precipitation kinetics and yield were sensitive to experimental conditions. The morphology, size and size distribution of the zinc oxalate powders varied with zinc/oxalate ion riatio, temperature, and the presence of SPAN 60, which affected nucleation, growth, and the emulsion characteristics.

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Carbon Nanotube Growth for Field Emission Display Application

  • Choi, G.S.;Park, J.B.;Hong, S.Y.;Cho, Y.S.;Son, K.H.;Kim, D-J;Song, Y.H.;Lee, J.H.;Cho, K.I.;Kim, D.J.
    • Journal of Information Display
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    • 제2권3호
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    • pp.54-59
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    • 2001
  • The role of $NH_3$ for vertical alignment of CNTs was investigated. The direct cause of the alignment was a dense distribution of catalytic metal particles, but which was kept catalytically active during the growth process by $NH_3$. This allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grow in a base growth mode. Several evidences were presented including a direct cross-sectional TEM observation. Since Ni is consumed both by silicide reaction and by capture in the growing tube, the growth stops when Ni is completely depleted. This occurs faster for smaller particles, and thus a longer growth results in thin bottom with poor adhesion.

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