• Corrosion Science and Technology
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• 제11권1호
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• 열처리공학회지
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• 제35권2호
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• pp.57-65
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• 2022

In this study, the effect of the initial particle size distribution (PSD) of (K_0.5Na_0.5)NbO₃ powders on the microstructure of sintered ceramics was investigated. (K_0.5Na_0.5)NbO₃ powders with uni-, bi-, tri-, and quad-modal PSDs were obtained through a planetary ball-mill. For the specimens sintered at 1080℃, the growth of abnormal grains was promoted from the powders exhibiting quad- and tri-modal PSDs with a high content of large particles, resulting in a microstructure in which huge abnormal grains were predominant. However, as the number of peaks in PSD and the overall particle size decreased, the abnormal grain growth was suppressed and the grain growth of small particles started, resulting in a microstructure with a uniform grain size. For the specimens sintered at 1100℃, huge abnormal grains were not observed due to the decrease in the critical driving force for 2D nucleation even when powders with quad- and tri-modal PSDs were used. It was confirmed that when powder with unimodal PSD was used, a uniform microstructure that was not significantly affected by the sintering temperature could be obtained. The results of this study demonstrate that the microstructure of (K_0.5Na_0.5)NbO₃-based ceramics can be controlled by controlling the particle size of the initial powder.

• 한국진공학회지
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• 제17권3호
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• pp.226-233
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• 2008

본 연구는 화학기상증착(Chemical Vapor Deposition)법을 이용하여 Si(100) 표면위에 Ge 나노점을 성장하여 나노점의 형성과 성장과정을 원자간력현미경(AFM)으로 조사하였다. 성장온도, Ge 증착량, 열처리시간의 변화에 따른 형성된 나노점의 모양, 크기, 표면 밀도의 변화를 분석하였다. $600^{\circ}C$의 성장온도에서 ${\sim}0.1ML/sec$의 증착율로 Ge을 증착한 결과, ${\sim}4ML$까지는 pseudomorphic한 Ge wetting 층이 형성되었으며, 증착시간을 증가하여 5ML 이상에서 Ge 나노점이 형성되기 시작하였다. Ge 증착량을 증가시킴에 따라 초기 나노점은 긴 지붕모양(elongated hut)구조로 형성되었고, 점차 크기가 증가함에 따라, 피라미드(pyramid), 돔(dome), 더 큰 Superdome 구조로 변형되었다. 초기 피라미드 형태의 나노점 평균크기는 ${\sim}20nm$이였으며, 가장 큰 superdome의 평균크기는 ${\sim}310nm$ 이상이었으며, 크기가 증가함에 따라 표면 밀도는 $4{\times}10^{10}cm^{-2}$에서 $5{\times}10^8cm^{-2}$로 감소하였다. 상대적으로 고온인 $650^{\circ}C$에서 Ge을 증착했을 경우, 피라미드 구조는 발견되지 않았으며, 대부분의 나노점은 돔 형태로 형성되었으며, 점차 superdome 형태로 변형되었다. 또한, 고온 성장된 시료의 열처리 시간을 증가함에 따라, 나노점의 크기는 점차 성장하였으나, 밀도는 거의 변화가 없었다. 이와 같은 나노점의 형태, 크기, 밀도의 변화는 나노점이 갖는 에너지의 최소화와 표면에서 원자들의 이동(diffusion)으로 설명할 수 있었다. 특히, AFM 이미지의 표면에 분포한 나노점들의 상대적인 위치를 분석한 결과, 유사한 크기의 근접한 나노점들은 점차 크기가 증가함에 따라 합쳐지는 Coalescence과정에 의해 성장하고, 크기가 다른 근접한 나노점들 사이에는 화학적 포텐셜에너지 차에 의한 ripening 과정의 성장을 관찰하였다. 즉, 형성된 나노점들은 국부적인 표면분포에 따라 나노점들은 두 성장과정이 동시 작용하여 성장함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• 한국결정성장학회지
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• 제9권4호
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• pp.387-395
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• 1999

The strain, surface and interfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe(FM) mode, the Stanski-Krastanov(SK) mode and the Volmer-Weber(VW) mode. The free energy for each mode was estimated as functions of thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the INPSb/InP and GaPSb/GaP system which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which two-dimensional(2D) layers precede the three-dimensional(3D) nucleation in the SK mode at x=1.0 depends on the lattice misfit.

• Elastomers and Composites
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• 제39권2호
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• pp.142-152
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• 2004

서로 다른 두 종류의 폴리스타일렌(PS)을 injection 기계를 이용하여 인장 시편을 만들고, 온도와 인장 속도에 따른 crazing 거동 특성을 연구하기 위하여 다양한 시험을 하였다. 기계적물성은 craze 형성뿐만 아니라 다양한 시험 변수에 의해 영향을 받으며, brittle-ductile transition 이하의 온도에서의 인장 응력 및 최대 신율은 분자량, 인장 속도의 증가 및 온도의 감소에 따라 증가하며 craze의 수와 평균 길이 또한 증가한다. Crazing 응력도 동일한 형태로 증가함을 보여준다. 그러나, 이러한 특성은 인장 강도에 미치는 영향과 비교했을 때 보다 의존도는 상대적으로 낮다. Craze 형성과 성장에 필요한 시간으로 설명할 수 있는 crazing 응력과 인장 응력간의 차이는 분자량, 인장 속도에 따라 비례적으로 그리고, 온도가 감소함에 따라 증가함을 보여 준다. Crazing 은 ${\beta}$-relaxation 온도 근처에서 활성화된다. 이 온도에서는 crazing 응력이 급격하게 감소함을 나타낸다. 인장 평가시 craze 밀도가 적용된 응력에 따라 기하 급수적으로 증가되는데, 개시 단계에서는 craze는 서서히 형성되며, 일단 일정한 수만큼의 craze가 형성이 되면 craze 밀도가 급속도로 증가했다.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.659-663
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• 2002

에틸알코올의 첨가로 과포화가 유도되는 NaF 결정화 과정을 수정진동자를 이용하여 측정하였다. 준안정 상태의 NaF 용액에 에틸알코올을 첨가하면 NaF의 용해도가 감소하여 NaF 과포화가 형성되어 결과적으로 NaF 결정이 생성 및 성장한다. NaF 용액의 과포화에서 결정 생성 및 성장하는 변화를 감지하기 위하여 수정진동자의 금전극 표면을 염산시스테아민(cysteamine hydrochloride; 2-mercaptoethylamine hydrochloride)으로 self-assembly하여 수식하여 응용 가능성을 검토하였다. 과포화 과정을 통해 생성된 NaF 결정이 염산시스테아민 표면 위에 흡착되면 흡착된 양에 비례하여 수정진동자 주파수가 변화하기 때문에 주파수 변화를 측정함으로써 간접적으로 NaF 결정과정을 분석할 수 있었다. 알코올의 주입량을 1-5 ml로 변화시킴으로써 용액 중에 형성되는 NaF의 과포화 농도의 수준을 변화시켜 주었으며, 염산시스테아민 박막에 대한 주파수 변화를 분석함으로써 주입량에 따른 NaF 결정화 정도를 해석할 수 있었다. 이들 결과들을 통하여 수정진동자를 이용한 NaF 결정화 과정의 분석이 가능함을 알 수 있었다.

• 한국식품과학회지
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• 제9권2호
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• pp.138-143
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• 1977

메밀 전분의 이화학적 성질을 살펴본바, 입자의 크기는 4.3-11.4 미크론(평균 7.8미크론)이었다. 전분의 물결합능력은 103.7%, 아밀로스 함량은 25%이었다. 복굴절성 소실의 측정법에 의한 호화개시 및 호화 종료 온도는 각각 $61^{\circ}$ 및 $65^{\circ}C$이었고 아밀로그라프에 의한 초기 호화온도는$64.5^{\circ}C$이었다. 전분의 노화속도는 $21^{\circ}C$에서 밀 전분보다 다소 빨랐다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.339-339
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• 2002

In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.