• Corrosion Science and Technology
• /
• v.11 no.1
• /
• pp.9-14
• /
• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.27.1-27.1
• /
• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Journal of the Korean Society for Heat Treatment
• /
• v.35 no.2
• /
• pp.57-65
• /
• 2022

In this study, the effect of the initial particle size distribution (PSD) of (K_0.5Na_0.5)NbO₃ powders on the microstructure of sintered ceramics was investigated. (K_0.5Na_0.5)NbO₃ powders with uni-, bi-, tri-, and quad-modal PSDs were obtained through a planetary ball-mill. For the specimens sintered at 1080℃, the growth of abnormal grains was promoted from the powders exhibiting quad- and tri-modal PSDs with a high content of large particles, resulting in a microstructure in which huge abnormal grains were predominant. However, as the number of peaks in PSD and the overall particle size decreased, the abnormal grain growth was suppressed and the grain growth of small particles started, resulting in a microstructure with a uniform grain size. For the specimens sintered at 1100℃, huge abnormal grains were not observed due to the decrease in the critical driving force for 2D nucleation even when powders with quad- and tri-modal PSDs were used. It was confirmed that when powder with unimodal PSD was used, a uniform microstructure that was not significantly affected by the sintering temperature could be obtained. The results of this study demonstrate that the microstructure of (K_0.5Na_0.5)NbO₃-based ceramics can be controlled by controlling the particle size of the initial powder.

• Journal of the Korean Vacuum Society
• /
• v.17 no.3
• /
• pp.226-233
• /
• 2008

The nucleation and evolution process of Ge nano-islands on Si(001) surfaces grown by chemical vapor deposition have been explored using atomic force microscopy (AFM). The Ge nano-islands are grown by exposing the substrates to a mixture of gasses GeH4 and H2 at pressure of 0.1-0.5Torr and temperatures of $600-650^{\circ}C$. The effect of growth conditions such as temperature, Ge thickness, annealing time on the shape, size, number density, and surface distribution was investigated. For Ge deposition greater than ${\sim}5$ monolayer (ML) with a growth rate of ${\sim}0.1ML/sec$ at $600^{\circ}C$, we observed island nucleation on the surface indicating the transition from strained layer to island structure. Further deposition of Ge led to shape transition from initial pyramid and hut to dome and superdome structure. The lateral average size of the islands increased from ${\sim}20nm$ to ${\sim}310nm$ while the number density decreased from $4{\times}10^{18}$ to $5{\times}10^8cm^{-2}$ during the shape transition process. In contrast, for the samples grown at a relatively higher temperature of $650^{\circ}C$ the morphology of the islands showed that the dome shape is dominant over the pyramid shape. The further deposition of Ge led to transition from the dome to the superdome shape. The evolution of shape, size, and surface distribution is related to energy minimization of the islands and surface diffusion of Ge adatoms. In particular, we found that the initially nucleated islands did not grow through long-range interaction between whole islands on the surface but via local interaction between the neighbor islands by investigation of the inter-islands distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.5
• /
• pp.500-504
• /
• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.4
• /
• pp.387-395
• /
• 1999

The strain, surface and interfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe(FM) mode, the Stanski-Krastanov(SK) mode and the Volmer-Weber(VW) mode. The free energy for each mode was estimated as functions of thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the INPSb/InP and GaPSb/GaP system which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which two-dimensional(2D) layers precede the three-dimensional(3D) nucleation in the SK mode at x=1.0 depends on the lattice misfit.

• Elastomers and Composites
• /
• v.39 no.2
• /
• pp.142-152
• /
• 2004

Tensile tests of two types of injection-molded polystyrene(PS) samples have been carried out over a wide range of temperature and strain rates in order to characterize their crazing behaviors. Mechanical properties were affected by the formation of crazes as well as test variables. Below the brittle-ductile transition temperature, the tensile stress and the ultimate elongation increased with the molecular weight, strain rate, and with decreasing temperature while the number and average length of crazes also increase. The crazing stress increased with molecular weight, strain rate, and with decreasing temperature. However, the dependence was small compared to the tensile stress. The gap between crazing stress and tensile stress which represents time fur craze formation and growth increased with molecular weight, strain rate, and with decreasing temperature. Crazing was activated near the ${\beta}$-relaxation temperature; crazing stress abruptly decreased at this temperature. During the tensile test, the craze density changed exponentially with the applied stress. At the initial stage, crazes formed slowly. Once a certain number of craze formed, however, the craze density increased rapidly. Craze nucleation and growth occur simultaneously.

• Korean Chemical Engineering Research
• /
• v.40 no.6
• /
• pp.659-663
• /
• 2002

The crystallization of NaF driven by adding ethanol was monitored using quartz crystal analyzer (QCA). Adding ethanol to NaF solution reduced the solubility of NaF and consequently led to nucleation and growth of NaF crystals. To investigate the crystallization behavior of NaF, a gold electrode of QCA was modified by anchoring with 2-mercaptoethylamine hydrochloride based on a self-assembly method. Frequency of QCA varied with the amount of NaF adsorbed on the self-assembled layer of 2-mercaptoethylamine hydrochloride, and thereby the process of NaF crystallization could be analyzed indirectly by monitoring the frequency change of QCA. To change the extent of supersaruration of NaF, the amount of ethanol added to the solution was varied from 1 to 5 ml. Then, the effect of the extent of the supersaturation on the crystallization was examined by analyzing the frequency changes of QCA coated with 2-mercaptoethylamine hydrochloride. It was shown that the QCA technique could be well applied for the characterization and analysis of the crystallization behavior of NaF.

• Korean Journal of Food Science and Technology
• /
• v.9 no.2
• /
• pp.138-143
• /
• 1977

Physicochemical properties of buckwheat starch were investigated. Starch granules were in the range of $4.3{\sim}11.4$ microns in size, the average being 7.8 microns. The starch had a water-binding capacity value of 103.7%, blue value of 0.35 and amylose content of 25%. The initial and final gelatinization temperatures were $61^{\circ}$ and $65^{\circ}C$, respectively. Amylograph data showed that the starch had an initial pasting temperature of $64.5^{\circ}C$. The kinetic study of crystallization of buckwheat starch during aging at $21^{\circ}C$ suggested that the mechanism of starch crystallization is instantaneous nucleation followed by rod-like growth of crystals.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2002.02a
• /
• pp.339-339
• /
• 2002

In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.