• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.109-114
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• 2016

Monodispersed $ZnGa_2O_4$ microspheres were synthesized by a facile two-step process consisting of a solvothermal method and calcination process. The prepared monodispersed $ZnGa_2O_4$ microspheres were aggregated into 3D microstructures by self-assembly with a large number of small $ZnGa_2O_4$ particles generated in nucleation. This nucleation and self-assembly making hierarchical microstructures were depended on the concentration of PEG (polyethylene glycol) due to CAC (critical aggregation concentration) theory. And also we controlled the amount of zinc acetate to make pure $ZnGa_2O_4$ phase. Additionally, to fix the optimized calcination condition, sample was characterized by TG-DTA to prove the thermal property in the calcination process and by FT-IR to identify the changes of functional group bonding between each element of the $ZnGa_2O_4$ precursor and oxide calcined at $900^{\circ}C$ for 1 h.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.8 no.3
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• pp.131-150
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• 1979

Recently only a few correlations between various factors due to the different grades of surface roughness for the nucleate pool boiling have been proposed. The main purpose of this work is to test the validity of these types of correlations between related factors to nucleate pool boiling phenomena. The boiling experiments using distilled water were carried out at the heat flux ranging from $7.4\times10^4\;to\;2.4\times10^5kcal/m^2h$ on the sintered porous metal surface with the cavity diameter of 10, n, 40, 70, $100{\mu}$, respectively, at the atmospheric pressure, To determine the bubble sizes, number of nucleation sites, delay and growth time, frequency of bubble emission and rising velocities of bubbles, the high speed motion picture technique was employed. In the correlation $f{\propto}D_b^n$, where f denotes frequency of bubble emission and $D_b$ departure diameter, n, the power factor of $D_b$, have been found to be from -2 to -10/3. The correlation C in the correlation between heat flux q and density of nucleation sites $\frac{N}{A}$, $q=C(\frac{N}{A})^n$, was appeared to be more crucial than the power factor n. The correlation of the heat flux q to the temperature difference ${\Delta}T$ and the density of nucleation sites$\frac{N}{A}$, was proposed to be $$q-460{\Delta}T^{\frac{5}{4}}=K{\Delta}T{\frac{5}{3}}(\frac{N}{A})^{\frac{2}{3}}$$. The values of heat transfer coefficient obtained in this experiments for the porous sintered metal surface appeared to be very high in comparison with the formerly obtained results for the other surfaces.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.81-114
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• 1999

The strain, surface and inerfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode an the Volmer-Wever (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which tow-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depnds on the lattice misfit.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.336-337
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• 2006

During sintering of cemented carbides abnormal grain growth is often observed but cannot be understood from the classical LSW-theory. A model based on 2-D nucleation of new crystalline layers and a grain-size distribution function is formulated and the equations are solved numerically. Experimental studies and computer simulations show that the initial grain size distribution has a strong effect on the grain growth behavior. For example, a fine-grained powder can grow past a coarser powder.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.17-23
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• 2005

The electrochemical behaviors of polycrystalline silver electrodes in 8M KOH solutions containing $Bi_2O_3$ were studied under various conditions by cyclic voltammetry, potentiostatic and galvanostatic techniques as well as the morphology of the silver oxide structures by SEM. It was found that three new compounds comprising silver, bismuth, and oxygen as well as $Bi_2O_3$, $Ag_2O$ and AgO were formed during the electrochemical oxidation of silver. In addition, the potentiostatic current transients were characterized by the appearances of the first current peaks corresponding to the formation of silver oxides, and the second current peaks corresponding to the Ag-Bi-O compounds, indicating the presence of the nucleation and 3D growth mechanism, in the potential regions of $Ag_2O$ and AgO, respectively. Microscopic examinations showed that two types of silver (I) oxide morphologies are formed in the potential region of $Ag_2O$.

• Corrosion Science and Technology
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• v.6 no.4
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.963-969
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• 1992

This paper describes the feasibility for a direct production of zinc oxalate powders from zinc-loaded D2EHPA solutions combining the purification and the precipitation in one operation unit. This process has the potential as an alternative to conventional method for the synthesis of zinc oxide precursor particles from the hydrometal-lurgical processes. Zinc was extracted into D2EHPA in kerosene and then zinc-loaded D2EHPA solution was emulsified with oxalic acid-HCl solution to precipitate zinc oxalate powder, which was readily calcined to zinc oxide. The precipitation kinetics and yield were sensitive to experimental conditions. The morphology, size and size distribution of the zinc oxalate powders varied with zinc/oxalate ion riatio, temperature, and the presence of SPAN 60, which affected nucleation, growth, and the emulsion characteristics.

• Journal of Information Display
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• v.2 no.3
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• pp.54-59
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• 2001

The role of $NH_3$ for vertical alignment of CNTs was investigated. The direct cause of the alignment was a dense distribution of catalytic metal particles, but which was kept catalytically active during the growth process by $NH_3$. This allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grow in a base growth mode. Several evidences were presented including a direct cross-sectional TEM observation. Since Ni is consumed both by silicide reaction and by capture in the growing tube, the growth stops when Ni is completely depleted. This occurs faster for smaller particles, and thus a longer growth results in thin bottom with poor adhesion.