• Journal of Power Electronics
• /
• v.2 no.4
• /
• pp.288-296
• /
• 2002

In this paper, a high frequency transformer - assisted auxiliary active resonant commutated snubber (HFTA-ARCS) for voltage source soft switching pulse width modulated power conversion circuits is presented. A three phase voltage source type soft switching inverter incorporating HFTA-ARCS circuits in its three bridge legs can reduce current rating of auxiliary active power switches and has sensorless simplified control scheme which any specified boost current management is not required for soft switching. Its operation principle and digital control scheme are described and a practical design method of circuit parameters on this HFTA-ARCS circuit is also introduced on the basis of computer simulation. Moreover, this space voltage vector modulated soft switching inverter system with DSP-based digital control scheme Is discussed and its effectiveness is proved on the basis of performance evaluations. The operating performances of this inverter system are also compared with those of conventional three-phase hard switching inverter under practical conditions of specified parameters.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.7
• /
• pp.55-60
• /
• 2017

This paper is proposed on the transmit Method Finger-Printer Scanning of Mutual Capacitance Touch Screen Panel Using Differential Pulse for improving the security of computer information. This system is composed of differential pulse generator and Ring-Counter, also Supply voltage is 5V. this system generates the Pulse wave which is composed of In-Phase and Out of Phase at 1MHz while period of 2m/s. it is designed and be able to operate four channels. overall power consumption is approximately 78.08nW. This prototype is implemented in 0.25um CMOS Process and Chip area is $870um{\times}880um$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.2
• /
• pp.65-69
• /
• 2014

Crystallographic phases of Plasma electrolytic oxidized Al alloy, A1100, A5052, A6061, A6063, A7075, were investigated. Two types of electrolyte $Na_2Si_2O_3$ and Na2P2O7 were also compared. Bipolar pulse, $2000{\mu}sec$ with $400{\mu}sec+420V$ impulse and $300{\mu}sec$ - impulse were applied for 20 min. ${\alpha}-alumina$, ${\gamma}-alumina$, ${\eta}-alumina$, $Al_{4.95}Si_{1.05}O_{9.52}$, and $(Al_{0.9}Cr_{0.1})_2O_3$ were mainly observed. Si, component of electrolyte, were moved into the PEO layer by bipolar pulse. Glassy phase was also observed at the surface of $Na_2Si_2O_3$ electrolyte treated PEO layer, and increased with the Mg content of Al alloy. It is concluded that at first glassy phase was formed by the micro plasma, and the high temperature of plasma turns glassy phase to several crystalline phases. And we could expect that many other crystalline phase could be formed by PEO process.

• Journal of electromagnetic engineering and science
• /
• v.3 no.2
• /
• pp.79-85
• /
• 2003

In this paper, we investigated the degree of compensation for distorted optical pulse of wavelength division multiplexed(WDM) channel with initial frequency chirp generated in optical transmitter. The WDM channel signal distortion is due to chromatic dispersion, self phase modulation(SPM) and cross phase modulation(XPM) in fiber. The considered system is 3 ${\times}$ 40 Gbps intensity modulation direct detection(IM/DD) WDM transmission systems, which adopted mid-span spectral inversion(MSSI) as compensation method. We confirmed that the effect of initial frequency chirp on compensation for signal distortion due to a SPM is gradually decreased as a dispersion coefficient of fiber becomes gradually small. But, in the aspect of a compensation for signal distortion due to both SPM and XPM, the effect of initial frequency chirp on compensation is gradually decreased as a dispersion coefficient of fiber becomes gradually large.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.4
• /
• pp.261-266
• /
• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.14 no.2
• /
• pp.89-96
• /
• 2000

This paper describes the forward type pulse power supply which is the simple circuit configuration and easy to be managed using a power semiconductor switching device(Power-MOSFET) in the view of commercialization. The maximum value of output pulse voltage of the proposed pulse power supply system can be realized by the variation of phase angle($\phi$) of bridge rectifier circuit and also its pulse period is determined by the duty ratio of Power-MOSFET. The principle of basic operating and the operating characteristics of the forward type pulse power supply are estimated by the switching frequency, the variation of phase angle($\phi$)It is shown that theoretical and experimental results are in good agreement by comparing simulation and experimental results of proposed pulse power supply when a lamp type ozonizer can be used as a load. This proposed pulse power system shows that it can be practically used in the future as a power source system in various fields.

• Journal of Navigation and Port Research
• /
• v.36 no.3
• /
• pp.169-173
• /
• 2012

In this paper, we propose an equalizer to minimize the inter-symbol interference when PSSK(Phase Silence Shift Keying) technique is applied to the low power underwater acoustic communication. PSSK is a QPSK(Quadrature Phase Shift Keying) modulation combined with PPM(Pulse Position Modulation), and it was proposed for low power communication. However, it has poor performance due to delay spread of underwater channel. In this paper, we propose a decision feedback equalizer to minimize the error in PSSK receiver. The sea trial was performed to evaluate the performance of the proposed method. In the result, the BER of PSSK was $4.36{\times}10^{-2}$ before the equalizer was applied, but the BER of PSSK was $3.95{\times}10^{-4}$ after the proposed equalizer was applied.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.38B no.10
• /
• pp.824-831
• /
• 2013

The delta driven GMSK is a modulation scheme to generate the gaussian pulse by the bipolar delta signal and to modulate the phase function with the differential gaussian pulse between $+T_b/2$ and $-T_b/2$. The demodulation of delta driven GMSK differs from conventional GMSK schemes. This paper proposed a demodulation with the differential phase detector at the end of each bit interval. A designed detector then finds the one of the possible region by hard decision, in which the phase difference lies. Finally the binary data can be recovered by state transition process. Through the BER simulation for AWGN channel, it was found that the proposed demodulation effected by the run length of binary data. The simulated BER degradation of about 2[dB] was analyzed, as compared to the theoretical coherent demodulation with $BT_b$=0.3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.629-637
• /
• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Journal of the Optical Society of Korea
• /
• v.19 no.2
• /
• pp.130-135
• /
• 2015

Based on the extended nonlinear Schr$\ddot{o}$dinger equation, the influences of the filter effect on pulse splitting in a passively mode-locked erbium-doped fiber laser with positive dispersion cavity are investigated theoretically. Numerical results show that, as the bandwidth of the spectral filter decreases, the nonlinear chirp appended to the pulse increases under the combined action of the filter effect of the super-Gaussian spectral filter and the self-phase modulation effect. On further decreasing the bandwidth, the wave breaking of the pulse takes place. In addition, by varying the pump power of the laser or the profile of the spectral filter, the influences of the filter effect on pulse splitting also change accordingly.