• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.96-99
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• 2003

This paper presents the development of a Ku-band Low Noise Amplifier with the Noise figure of 1.4dBmax, the gain of 35dB, and the In/Out Return toss of -22dB/-18dB in the frequency range from 14 to 14.5GHz for Satellite transponders. All RF components were assembled using a hybrid technology with 15-mil thin-film substrates. The mechanical and thermal design of the housing was performed considering a vibration and a vacuum of space environment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.455-462
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• 2015

In this paper, we suggested multiband antenna that can be equipped on a inflatable life-jacket, operating VHF-DSC band(156 MHz), COSPAS-SARSAT band(406 MHz) and GPS band(1,575 MHz) for search and rescue survivors quickly. The GPS band antenna was implemented with a square ring-slot planar antenna, and the COSPAS-SARSAT and VHF-DSC band antenna were implemented meander type dipole antennas. In order to place the antenna on a life-jacket, we installed it on 0.2 mm thickness FR-4 substrate to obtain a flexibility. It appeared that the antenna has -14.6 dB, -30.9 dB, and -18 dB return loss in COSPAS-SARSAT, GPS, and VHF-DSC band, respectively. In addition, its gain has 0.83 dBi, 2.1 dBi in COSPAS-SARSAT and GPS band, respectively.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.9 no.4
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• pp.153-157
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• 2010

In this paper, a dual band LNA (Low Noise Amplifier) with a LC-tank matching circuit is designed for 912MHz and 2.45GHz RFID reader. The operating frequency is decided by the LC-tank resonance. The simulated results demonstrate that S21 parameter is 11.683dB and 5.748dB at 912MHz and 2.45GHz, respectively, and the S11 are -10.796dB and -21.261dB, the S22 are -7.131dB and -14.877dB at the same frequencies. The measured NF (Noise Figure) is 0.471 and 1.726 at 912MHz and 2.45GHz, respectively.

• The KIPS Transactions:PartB
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• v.14B no.6
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• pp.423-430
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• 2007

Optical coherence tomography(OCT) is a high resolution imaging system which can image the cross section of microscopic organs in a living tissue with about $1{\mu}m$ resolution. In this paper, we implement OCT system and acquire 2-D images of rat eye and human molar samples especially in the field of opthalmology and dentistry. In terms of 2-D images, we reconstruct 3-D OCT images which give us another inner structural information of target objects. OPEN-GL reduces the 3-D processing time 10 times less than MATLAB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.6
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• pp.835-840
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• 1993

In this paper a FET mixer is designed realized by small-signal S-parameter using microwave CAD, LINMIC + at Ku-band. The mixer has conversion gain 9.88dB at 14GHz RF, 1GHz IF, and + 1dBm LO imput. The maximum conversion gain is obtained 11.71dB at 1.1GHz. The result shows that the FET mixer does not need pre-and/or IF amplifier. The mixer maintains the desired conversion gain with low LO power level. The conversion gain of the mixer is higher than the available gain of a amplifier, which is experimentally verified.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.514-520
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• 2002

In this paper, the study of a design and fabrication of the receiver MMIC mixer for L-band application is described. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The conversion gain of the mixer is -14 dB, IIP3 is approximately 4 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.4\;mm{\times}1.4\;mm$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.811-818
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• 2002

In this paper, a shorting pin and slot-loaded microstrip patch antenna is designed and fabricated. A shorting pin and slots are used for harmonic suppression on an inset fed antenna. A shorting pin and slot properties are analyzed by cavity model of the rectangular patch and the characteristics of the designed antenna are described. The designed antenna provides a gain of 7 dBi at the fundamental frequency, 5.8 GHz. In the second and third harmonic frequencies, the proposed antenna has gain suppression properties of -3.3 dB and -14.3 dB at each harmonic frequency, respectively.

• Journal of IKEEE
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• v.25 no.1
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• pp.133-138
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• 2021

We propose a Ku-band three-stack CMOS power amplifier to enhance the output power and efficiency. To minimize the dc power consumption, the driver stage is designed using common-source structure. To obtain high output power and utilize a voltage combining method, the power stage is designed using stack structure. To verify the proposed power amplifier structure, we design a Ku-band power amplifier using 65-nm RFCMOS process which provide nine metal layers. The P1dB, power-added efficiency, and gain are higher than 20 dBm, 23 dB, and 25%, respectively, while the operating frequency is 14 GHz-16 GHz.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.150-153
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• 2000

In this paper, we have designed a 2 stage MMIC power amplifier which has flat gains of in-band and reasonable out-band cutoff characteristics using 0.5$\mu\textrm{m}$ MESFET libra교 of ETRI. For the 1st stave, we obtaind P$_{1dB}$ of 9.2 dBm and gain 10.8 dB using 6 finger D-MESFET and P$_{1dB}$ of 18.4 dBm and gain of 10.8 dB using 14 finger D-MESFET for the 2nd stage, which is power matched using LIBRA's embedded TUNER. Also in-band gain flatness and out-band cutoff characteristics are obtained by attaching LC tank in the output matching circuit. The designed 2 stage MMIC power amplifier has bandwidth of 0.95～2.8 GHz, gain of 20 dB and P$_{1dB}$of 17.2 dBm. Especially gain flatness of $\pm$0.8dB was obtained in 1.8～2.5 GHz frequency ranges. And chip size is 1.4$\times$1.4 mm..4 mm.