• Journal of Korea Foresty Energy
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• v.21 no.1
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• pp.41-48
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• 2002

The barks of oak trees (Quercus acutissima and Quercus variabilis) were collected, extracted with acetone-$H_2O$ (7:3, v/v), fractionated with hexane, $CH^2C1^2$ EtOAc and -$H_2O$, then freeze dried to give dark brown powder. The EtOAc soluble mixtures of the trees were chromatographed on a Sephadex LH-20 column using a series of aqueous methanol and ethanol-hexane mixture as eluents. The structures of isolated compounds were characterized by $^1H$, $^13C$ and 2D-NMR spectroscopy and molecular weights were determined by FAB-MS spectra. The isolated compounds from Quercus acutissima were (+)-catechin, (+)-gallocatechin, gallic acid and taxifolin-3-O-$\beta$-D-glucopyranoside and the compounds from Quercus variahilis (+)-catechin, caffeic acid and taxifolin-3-O-$\beta$-D-glucopyranoside.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05a
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• pp.157-162
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• 1998

양전자 단층 촬영장치(PET)에 사용되는 주요 양전자 방출 핵종들의 생성 단면적을 평가하였다. 평가한 생성 반응들은 $^{14}$ N(p,$\alpha$)$^{11}$ C,$^{16}$ O(p,$\alpha$)$^{13}$N, $^{14}$ N(d,n)$^{15}$ O,$^{18}$ O(p,n)$^{18}$ F,$^{20}$ Ne(d,$\alpha$)$_{18}$ F 이며, 입사 입자의 에너지 범위는 반응 문턱 에너지부터 약 150 MeV까지이다. 또한 하전입자 범 모니터용 표준 단면적으로서 $^{27}$ Al에 d 및 $^3$He, $\alpha$가 반응하여 $^{22}$ Na가 생성되는 반응의 단면적들을 입사 에너지 약 120 MeV까지 평가하였다. 실험치를 fitting하게나 ALICE95 코드를 이용하여 이론적 계산을 수행하였는데, 평가 단면적의 표준 편차는 10-30%이다 이들 평가 단면적들은 가속기를 이용한 PET용 핵종의 생산율 계산 및 빔 모니터의 표준 단면적으로 사용하기에 적절한 것으로 판단된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Journal of Korean Society of Forest Science
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• v.96 no.4
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• pp.408-413
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• 2007

The dried bark of Platycarya strobilacea were ground, extracted with 95% EtOH, concentrated, and one of EtOH extracts was fractionated with a series of n-hexane, dichloromethane and another was fractionated with a series of petroleumether, $Et_2O$, ethyl acetate on a separatory funnel. A portion of dichloromethane soluble was chromatographed on a Sephadex LH-20 column ($72.0{\times}5.0cm$) using EtOH-$CHCl_3$ (7:3, v/v) as eluent and A portion of $Et_2O$ soluble was chromatographed on a silica gel column ($42.0{\times}3.5cm$) using $CHCl_3$-MeOH (9:3, v/v) as eluent. The isolated compounds were identified by TLC, $^1H$-, $^{13}C$-NMR, HMBC and EI-MS. Two flavonoids and three flavonoid glycosides were isolated from the bark of P strobilacea. The structures were determined to quercetin (compound 1), myricetin (compound 2) as flavonol compounds and afzelin (compound 3), quercitrin (compound 4), myricitrin (compound 5) as flavonol glycosides, respectively, on the basis of spectrosopic data.

• 전기의세계
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• v.13 no.4
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• pp.49-55
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• 1964

고 energy영역의 소립자 연구는 기존 선진제국의 대연구소에 의존할 수 밖에 없어도 저 energy의 물성론이나 공업적면 및 의료용의 이용을 목표로 한 Linac는 radar의 micro파 기술이 있는 우리나라에서도 제작이 쉽게 가능하다. 그것은 기계적으로 micron범위의 정도를 요하는 가속관 부분만 도입해서 15MeV의 Linac를 첫 단계로 완성하면 원자로와 아울러 연구 및 생산기술면에 있어서 커다란 무기로서 활용할 수 있는 기구가 될것이다. 또 한걸음 나아가서는 우리나라의 군사과학기술을 민간공업부문에 전용할 수 있는 좋은 계기가 될것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.81-81
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• 2003

• Journal of the Korean Society of Radiology
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• v.11 no.4
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• pp.197-203
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• 2017

This study purpose is propose the basic data for selecting the optimal target material by analyzing the photon characteristics of various materials which was located in the head of medical linear accelerator. In this study, energy spectrum of 6, 15 MV photon beams were compared and analyzed for 13 target materials using MCNPX of Monte Carlo method. The mean energy for the 6 MV energy spectrum was 1.69 ~ 1.84 MeV and that for the 15 MV was 3.38 ~ 3.56 MeV, according to the target material. The flux for the 6 MV energy spectrum was $1.64{\times}10^{-5}{\sim}1.80{\times}10^{-5}{\sharp}/cm^2/e$ and that for the 15 MV was $1.76{\times}10^{-4}{\sim}1.85{\times}10^{-4}{\sharp}/cm^2/e$. The analysis shows that the average energy and flux increase with higher atomic number of the target material. Based on this study, it is possible to present the basic data about the physical characteristics of the photon, and it will be possible to select the target later considering economic, efficiency and physical aspect.

• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.263-268
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• 2004

Using the Monte Carlo simulation, a study on the lion-proportionality of the prototype phoswich detector with $2'{\times}2'$ CSI(Tl) and plastic scintillator, which was made by KAERI, has been carried. The defector response functions (DRFs) calculated by simulations were compared with the experimental measurement on the $^{137}Cs\;and\;^{60}Co$. To precisely simulate the DRF for the phoswich, the CSI(Tl) non-proportionality was calculated using the electron response and the simplified electron cascade sequence for treating the photoelectric absorption event. The resulting DRFs of $^{137}Cs\;and\;^{60}Co$ sources obtained by simulations were compared with experiments for verification. For $^{137}Cs$, gamma-ray responses simulated by MCNP5 are generally good agreement with the measured ones. But the DRF of $^{60}Co$ does not match well with the results of experiment in the energy region below second peak due to the coincidence effect of two gamma-rays (1.17 MeV and 1.33 MeV). Through the analysis of the non-proportionality of CsI(Tl) in the prototype phoswich, the improved DRFs considering non-proportionality were produced and the simulation results were verified using the experimental measurements. However, to more precisely reproduce the DRF for the phoswich, further studies in relation to the electron channeling effect and the Doppler broadening effect of a scintillator are still needed as well as considering that effect of the transfer contribution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.