• Title/Summary/Keyword: 13 MeV proton beam

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Transverse Profile Measurement of Proton Beam using the Beam Induced Fluorescence Monitor in KIRAMS-13 Cyclotron (Beam Induced Fluorescence 모니터를 이용한 KIRAMS-13 싸이클로트론의 양성자빔 횡단면 측정)

  • Nam, S.K.;Kim, K.B.
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.418-425
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    • 2009
  • To get the stable and optimized proton beam in the KIRAMS-13 cyclotron which installed in the regional cyclotron center, it is necessary to measure the transverse profile of proton beam. Beam Induced Fluorescence monitor is one of the non-destructive methods to measure the beam profiles, and it has many advantages such as a simple structure, real-time measurement, and minimum energy loss. The objective of this research is the design and development of Beam Induced Fluorescence monitor to measure the proton beam profiles in the KIRAMS-13 cyclotron.

Investigation of Various Radiation Proton Energy Effect on n, p Type Silicon by Positron Annihilation Method (양전자 소멸 측정법으로 양성자 조사에너지 변화에 대한 n, p형 실리콘 구조 특성)

  • Lee, Chong Yong
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.341-347
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    • 2013
  • The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.

Analysis of Proton Nuclear Reaction-Generated Nuclides for Different Proton Energy (양성자 에너지 변화에 따른 핵반응 생성핵종 분석)

  • Lee, Samyol
    • Journal of the Korean Society of Radiology
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    • v.13 no.5
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    • pp.819-824
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    • 2019
  • In this study, we proposed a method for identifying isotopes generated from high-energy proton $^{nat}Pb$(p,xn) nuclear reactions through the difference of gamma rays generated through nuclear reactions using different proton energies. The experiment was performed by using a high energy proton generated from a 100 MeV proton linear accelerator of the Korea Atomic Energy Research Institute. Gamma rays generated by various nuclides generated through proton nuclear reactions were measured using a gamma-ray spectroscopy system composed of HPGe detectors. Gamma-ray standard sources were used for accurate energy calibration and efficiency measurements of HPGe gamma-ray detectors. For the proposed method, 100 and 60 MeV proton energy beams were used for the same natural lead samples. This method was found to be very effective in identifying nuclides produced by comparing gamma rays generated from the same sample with each other. The results of this study are expected to be very effective in obtaining other proton nuclear reaction results in the future.

Oprimization Study for the CRC PIXE System Beam Transport Line

  • Jeong, Cheol-Ki;Lee, Goung-Jin
    • Journal of Radiation Industry
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    • v.8 no.1
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    • pp.59-63
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    • 2014
  • Proton Induced X-ray Emission (PIXE) is a MeV ion beam analysis method for use with particle accelerators. PIXE uses low-energy charged particles as an excitation mechanism to generate characteristic x-ray emission from each element in a target. In PIXE analysis, the beam current used is from a few nA to several tens of nA. Chosun University (Cyclotron Research Center) designed a $50{\mu}A$ beam line from the 13 MeV cyclotron for use with a PIXE analysis system, as well as performing beam transport line optimization research. In this study, the beam line operation conditions for the optimization process of beam transport and beam characteristics are shown.

Development of Dual-mode Signal Processing Module for Multi-slit Prompt-gamma Camera (다중 슬릿 즉발감마선 카메라를 위한 이중모드 신호처리 모듈 개발)

  • Park, Jong Hoon;Lee, Han Rim;Kim, Sung Hun;Kim, Chan Hyeong;Shin, Dong Ho;Lee, Se Byeong;Jeong, Jonh Hwi
    • Progress in Medical Physics
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    • v.27 no.1
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    • pp.37-45
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    • 2016
  • In proton therapy, in vivo proton beam range verification is very important to deliver conformal dose to the target volume and minimize unnecessary dose to normal tissue. For this purpose, a multi-slit prompt-gamma camera module made of 24 scintillation detectors and 24-channel signal processing system is under development. In the present study, we have developed and tested a dual-mode signal processing system, which can operate in the energy calibration mode and the fast data acquisition mode, to process the signals from the 24 scintillation detectors. As a result of performance test, using the energy calibration mode, we were able to perform energy calibration for the 24 scintillation detectors at the same time and determine the discrimination levels for the detector channels. Further, using the fast data acquisition mode, we were able to measure a prompt-gamma distribution induced by a 45 MeV proton beam. The measured prompt gamma distribution was found similar to the proton dose distribution at the distal fall-off region, and the estimated beam range was $17.13{\pm}0.76mm$, which is close to the proton beam range of 16.15 mm measured by an EBT film.

SEPARATION OF GAMMA-RAYS PRODUCTION FROM $^{13}C(p,\;{\gamma})^{14}N,\;^{14}N({\gamma},\;{\gamma})^{14}N$ REACTIONS USING DOPPLER SHIFT EFFECT

  • Kim, Y.K.;Ha, J.H.;Youn, M.;Han, S.H.;Chung, C.E.;Moon, B.S.
    • Journal of Radiation Protection and Research
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    • v.26 no.3
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    • pp.287-290
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    • 2001
  • The 9.17MeV gamma-rays from the $^{13}C(p,\;{\gamma})^{14}N,\;^{14}N({\gamma},\;{\gamma})^{14}N$ reactions were measured. The incident 9.17MeV gamma-ray was produced from the $^{13}C(p,\;{\gamma})^{14}N$ reaction at Ep=1.75MeV resonance. The 1.75MeV proton beam was accelerated using the 3MV SNU-AMS Tandetron and 1.7MV KIGAM Tandem accelerators. The enriched 13C target was $121{\mu}g/cm^2$ self-supporting foil, and we used liquid nitrogen as a resonant absorption target. We used a HP-Ge detector with 30% efficiency and less 2keV energy resolution. We developed new method to detect the scattered 9.17MeV gamma-ray from the nitrogen target by using the energy difference between the Doppler shifted gamma-ray from the $^{13}C(p,\;{\gamma})^{14}N$ reaction and the resonant absorbed and rescattered gamma-ray from the $^{14}N({\gamma},\;{\gamma})^{14}N$ reaction.

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Investigation of Proton Irradiated Effect on n, p type Silicon by Positron Annihilation Method (양전자 소멸 측정에 의한 n, p형 실리콘 구조 특성)

  • Lee, C.Y.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.225-232
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    • 2012
  • It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

Proton Irradiated Cz-Si by the Coincidence Doppler Broadening Positron Annihilation Spectroscopy (동시계수 양전자 소멸 측정에 의한 양성자 조사된 Si 구조 특성)

  • Lee, K.H.;Lee, C.Y.
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.367-373
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    • 2011
  • It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to ${\sim}10^{14}$ ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.

Analysis of Light Elements by PIGE (양성자 유발 감마선 발생법에 의한 경원소 분석)

  • Kim, Y.S.;Choi, H.W.;Kim, D.K.;Woo, H.J.;Kim, N.B.;Park, K.S.
    • Analytical Science and Technology
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    • v.13 no.1
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    • pp.12-21
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    • 2000
  • The PIGE (Proton Induced Gamma ray Emission) method was applied for the measurement of light elements Li ~ K. A test measurement has been performed for geological, biological, environmental and material samples by using a standard sample for each element. The measurement was performed for the two proton energies of 2.4 and 3.4 MeV, and 3.4 MeV was found to yield better result for multielemental analysis. The result shows a fair agreement within 15% for all elements with standard values. The detection limits of Li, B, F and Na are less than 100 ppm, while those of the other elements are from a few hundred ppm to a few percents.

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Fabrication of a fast Switching Thyristor by Proton Irradiation Method (양성자 조사법에 의한 고속스위칭 사이리스터의 제조)

  • Kim, Eun-Dong;Zhang, Changli;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1264-1270
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    • 2004
  • A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(~1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.