• Journal of the Korean Magnetics Society
• /
• v.19 no.3
• /
• pp.85-88
• /
• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.12
• /
• pp.3690-3694
• /
• 2013

The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

• Journal of the Korean Ceramic Society
• /
• v.37 no.5
• /
• pp.432-437
• /
• 2000

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

• Korean Journal of Optics and Photonics
• /
• v.10 no.4
• /
• pp.306-310
• /
• 1999

Electron intersubband absorption in Sb $\delta$-doped Si(110)/SiGe multiple quantum well structures is observed. Normally incident light can excite electrons in Si(110) quantum wells, which is not possible for Si(001) or GaAs quantum wells. The influence of Ge composition in SiGe barries is investigated. As the Ge composition in SiGe barriers increases, the absorption strength is decreased and the transition energy is increased. It is verifired by comparing the calculated and experimental results obtained at various incident and polarization angles that normally incident light and parallel incident light are absorbed in different processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.1
• /
• pp.44-48
• /
• 2008

Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.40 no.1
• /
• pp.20-28
• /
• 2011

Crude polysaccharide (CP) was fractionated from the submerged culture (containing both mycelia and culture broth, SC) with Phellinus linteus (PL) in mushroom complete medium (MCM) supplemented with ginseng extract ($65^{\circ}$Bx, GE) to enhance the immune activity. PL-GE-15-CP from SC cultivated in MCM supplemented with GE-15% (v/v, a ratio of MCM volume to GE) showed significantly higher macrophage stimulation (1.45 fold of the saline control at $100{\mu}g$/mL) than PL-GE-5 and 10-CP with GE-5 and 10%, or PL-CP from SC without GE. The potent intestinal immune system modulating activity through Peyer's patch was also obtained by PL-GE-15-CP (1.46 fold). When PL-GE-15-CP further fractionated on DEAE-Sepharose CL-6B (Cl- form), PL-GE-15-CP-II was the significantly higher than others from PL-GE-15-CP or PL-CP on macrophage stimulation, interleukin (IL)-12 production and intestinal immune system modulation (1.54, 3.96 and 1.56 fold, respectively). PL-GE-15-CP-II also had higher anti-metastatic activity against colon 26-M3.1 carcinoma cell (57.3% inhibition of tumor control, $200{\mu}g$/mouse) rather than PL-CP-II. This active fraction (PL-GE-15-CP-II) mainly contained neutral sugar (82.45%) and uronic acid (12.99%), and component sugar analysis showed that PL-GE-15-CP-II consisted mainly of uronic acid, Ara, Man, Gal and Glc (molar ratio of 0.52:0.97:0.63:1.00:0.54). Furthermore, the activity of GE culture was higher compared with culture without GE, indicating that GE helped to enhance the immune activity of P. linteus; also, it is assumed that the polysaccharide plays an important role in immune enhancement.

• Electrical & Electronic Materials
• /
• v.1 no.3
• /
• pp.251-260
• /
• 1988

n형 GaAs에 음성접촉을 형성함에 있어서 Au-Ge 공융합금을 용해시키는 alloying 보다는 sintering을 필요로 하는 Su-Pd-Ge계의 새로운 융성접촉을 도입하였다. Au-Pd-Ge계의 최적의 음성조건을 조사하기 위하여 Au/Pd/Ge, Au/Ge/Pd, Au/Pd/Ge/Pd 그리고 Au/Pd/Au/Ge 음성접촉을 제조하였다. 비접촉저항을 조사하는데 있어서 sintering 온도는 390-450.deg.C사이였고 시간은 30초에서 6분 사이였다. Au-Pd-Ge계의 비접촉저항은 alloying된 Au/Pd/Ge 접촉의 그것에 필적할 만큼 낮았으며 특히 Au/Ge/Pd 접촉은 430.deg.C, 3분의 sintering 조건에서 가장 낮은 1.2*$10^{-6}$.OMEGA..$cm^{2}$의 비접촉저항을 나타냈다. Au/Ge/Pd 접촉의 표면형상 및 접촉패턴 가장자리는 450.deg.C에서 2분 이상 sintering된 접촉을 제외하고는 sintering 후에 as-deposited 상태와 다를 바가 없었다. 430.deg.C, 3분 sintering에서 가장 낮은 비접촉저항을 나타낸 Au/Ge/Pd 접촉의 비접촉저항은 430.deg.C에서 Ge/Pd 두께 변화에 비교적 변화가 적었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.5
• /
• pp.411-414
• /
• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Korean Journal of Environmental Agriculture
• /
• v.26 no.3
• /
• pp.217-222
• /
• 2007

To investigate effects of inorganic $(GeO_2)$ and organic (Ge-132) germanium (Ge) on seed germination and on early stage growth of plane and the uptake characteristics, various concentrations (0, 10, 25, 50, 100 mg $L^{-1}$) of Ge to popular vegetables such as leaf mustard, chinese cabbage and pak-choi, respectively, were treated. On seed germination, no significant effect was observed in both inorganic and organic Ge treatments except 100 mg $L^{-1}$ treatment of inorganic Ge. Exogenous inorganic Ge ($10{\sim}100$ mg $L^{-1}$ treatments significantly inhibited the early root elongation growth of all plants. However, slight enhancement of early shoot elongation was detected in low concentrations (10 and 25 mg $L^{-1}$) of Ge in the leaf mustard and chinese cabbage plants. Organic Ge treatments significantly stimulated the 개ot and shoot growth at the 10, 25 and 50 mg $L^{-1}$ treatments. Ge was accumulated linearly in the vegetables as both inorganic and organic Ge concentrations were increased. Interestingly, total contents of Ge in plants with Ge-132 treatments were $2\sim4.5$ times more than those with inorganic Ge treatments in all concentrations. At 25 mg $L^{-1}$ treatment of Ge, contents of Ge in vegetables are following: in leaf mustard, inorganic Ge: 0.37 mg $g^{-1}dw$ and organic Ge: 1.47 mg $g^{-1}dw;$ in the chinese cabbage, inorganic Ge: 0.4 mg $g^{-1}dw$ and organic Ge: 0.86 mg $g^{-1}dw;$ in the pak-choi, inorganic Ge: 0.33 mg $g^{-1}dw$ and organic Ge: 0.70 mg $g^{-1}dw$, respectively. These results showed organic Ge is much better on early stage seedling growth and on germanium accumulation of vegetables than inorganic Ge.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.40-43
• /
• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.