• Title/Summary/Keyword: 10GE

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Real-time Observation of Evolution Dynamics of Ge Nanostructures on Si Surfaces by Photoelectron Emission Microscopy (자외선 광여기 전자현미경을 이용한 Si 표면 위에 Ge 나노구조의 성장 동역학에 관한 실시간 연구)

  • Cho, W.S.;Yang, W.C.;Himmerlich, M.;Nemanich, R.J.
    • Journal of the Korean Vacuum Society
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    • v.16 no.2
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    • pp.145-152
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    • 2007
  • The evolution dynamics of nanoscale Ge islands on both Si (001) and (113) surfaces is explored using ultraviolet photoelectron emission microscopy (UV-PEEM). Real-time monitoring of the in-situ growth of the Ge island structures can allow us to study the variation of the size, the shape and the density of the nanostructures. For Ge depositions greater than ${\sim}4$ monolayer (ML) with a growth rate of ${\sim}0.4\;ML/min$ at temperatures of $450-550^{\circ}C$, we observed island nucleation on both surfaces indicating the transition from strained layer to island structure. During continuous deposition the circular islands grew larger via ripening processes. AFM measurements showed that the islands grown on Si (001) were dome-shaped while the islands on Si (113) were multiple-side faceted with flat tops of (113)-orientation. In contrast, for Ge deposition with a lower growth rate of ${\sim}0.15\;ML/min$ on Si(113), we observed the shape transition from circular into elongated island structures. The elongated islands grew longer along the [$33\bar{2}$] during continuous Ge deposition. The shape evolution of the islands is discussed in terms of strain relaxation and kinetic effects.

Characteristics of the Photoinduced Anisotropy(PA) in Ag/AsGeSeS Multilayer Thin Films (Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성)

  • Yeo, Cheol-Ho;Na, Su-Woong;Shin, Kyung;Park, Jeong-Il;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.144-150
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    • 2003
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition (저압화학증착을 이용한 실리콘-게르마늄 이종접합구조의 에피성장과 소자제작 기술 개발)

  • Shim, K.H;Kim, S.H;Song, Y.J;Lee, N.E;Lim, J.W;Kang, J.Y
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.4
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    • pp.285-296
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    • 2005
  • Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 % in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

Structural Dependence of Nonlinear Optical Properties in $TeO_2-PbO-GeO_2$ ($TeO_2-PbO-GeO_2$계 유리 내 비선셩 광학 특성의 구조 의존성)

  • Kim, Weon-Hyo;Heo, Jong;Kim, You-Song;Ryou, Sun-Youn
    • Journal of the Korean Ceramic Society
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    • v.33 no.5
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    • pp.507-513
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    • 1996
  • Nonlinear optical properties of TeO2-PbO-GeO2 glasses were investigated and their correlation with struc-tural modification was investigated. Third-order nonlinear susceptibility $\chi$, ranged between 5.0$\times$10-13 esu and 10.7$\times$10-13 esu which are approximately 20-40 times larger than that of silica glass. The glass with a composition of 85(80TeO2-20PbO)-15GeO2(mol%) seemed to provide an optimum compromise between $\chi$and the stability against crystallization. Analyses of the Raman spectra suggested that these glasses are mainly composed of [TeO4] tbp, [TeO3]tp and [GeO4] tetrahedral structural units. It was concluded that the positive contribution of Pb2+ with high polarizability to $\chi$ in TeO2-PbO glasses overwhelmed the negative influence due to the structural modification of [TeO4]tbplongrightarrow[TeO3]tp. On the other hand addition of GeO2 in TeO2-PbO-GeO2 glasses resulted in the decrease of $\chi$ values. This behavior was attributed to the formation of [GeO4] polyhedra at the expense of [TeOn] polyhedra and Pb2+ ions which normally sowed a higher contribu-tion to $\chi$ than [GeO4] polyhedra.

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Effects of Dietary Garlic Extract on Growth, Feed Utilization and Whole Body Composition of Juvenile Sterlet Sturgeon (Acipenser ruthenus)

  • Lee, Dong-Hoon;Ra, Chang-Six;Song, Young-Han;Sung, Kyung-Il;Kim, Jeong-Dae
    • Asian-Australasian Journal of Animal Sciences
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    • v.25 no.4
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    • pp.577-583
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    • 2012
  • This study was carried out to investigate the supplemental effects of dietary garlic extract (GE) on growth performance of juvenile sterlet sturgeon (Acipenser ruthenus). The first experiment was designed to determine the optimum levels of garlic extract as growth promoter during 10 weeks. Three groups (two replicates/group) of 240 fish with mean body weight of 85 g were fed with diets containing 0 (control), 0.5 and 1.0% of GE. The highest weight gain (%) and feed efficiency (%) were found in fish groups fed with diet containing 0.5% GE. Subsequently, the supplemental effects of dietary GE was studied on growth of juvenile sterlet sturgeon (Acipenser ruthenus) with an average body weight of 59.6 g. Fish cultured in freshwater were randomly allotted to each of 10 tanks (two groups of five replicates, 20 fish/tank) and fed diets with 0.5% GE or without GE (control), respectively, at the level of 2.0% of fish body weight per day for 5 weeks. Weight gain (51.1%), feed efficiency (79.1%), specific growth rate (1.18%) and protein efficiency ratio (1.50) of fish fed 0.5% GE were significantly (p<0.05) higher than those fish fed the control diet. Significantly higher protein (PRE 20.4%) and lipid retention efficiencies (LRE, 74.5%) were also found in 0.5% GE group (p<0.05). The present results suggested that dietary GE could improve growth and feed utilization of juvenile sterlet sturgeons.

An evaluation on crystallization of amorphous (InTe)x(GeTe)y thin films by nano-pulse illumination (나노-펄스 노출에 따른 비정질(InTe)x(GeTe)y박막의 결정화 속도 평가)

  • Song, Ki-Ho;Seo, Jae-Hee;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.419-420
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    • 2008
  • In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

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Effect of Annealing Temperature on Phase-change Characteristics of GeSbTe-based Bilayers (GeSbTe계 이중층의 상변화 특성에 미치는 열처리 온도 효과)

  • Yoon, Hoi Jin;Bang, Ki Su;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.86-90
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    • 2017
  • This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

Effects of Beef Fat Replacement with Gelled Emulsion Prepared with Olive Oil on Quality Parameters of Chicken Patties

  • Meltem, Serdaroglu;Berker, Nacak;Merve, Karabiylkoglu
    • Food Science of Animal Resources
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    • v.37 no.3
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    • pp.376-384
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    • 2017
  • The objective of this study was to investigate the effect of using gelled emulsion (olive oil 46%, inulin 9%, gelatin 3%) as fat replacer on some quality parameters of chicken patties. For this purpose GE, prepared with olive oil, gelatin and inulin was replaced with beef fat at a level of 0%, 25%, 50%, 100% (C, G25, G50, G100). In this study syneresis, thermal stability, centrifuge and creaming stability of gelled emulsion were analyzed. Chemical composition, technological paramerers (cooking yield, water holding capacity, diameter reduction, fat and moisture retention) and textural and sensory properites were evaluated in comparision to control patties. High thermal stability was recorded in GE (93%), also creaming stability results showed that GE protected its stability without any turbidity and separation of the layer. The complete replacement of beef fat with GE showed detrimental effect on all investigated cooking characteristics except fat retention. Replacement of beef fat with GE at a level of 50% resulted similar cooking characteristics with C samples. Color parameters of samples were affected by GE addition, higher CIE $b^*$ values observed with respect to GE concentration. The presence of GE significantly affected textural behaviors of samples (p<0.05). Our results showed that GE prepared with inulin and olive oil is a viable fat replacer for the manufacture of chicken patty.

Bi-directional Two Terminal Switching Device based on SiGe for Spin Transfer Torque (STT) MRAM

  • Yang, Hyung-Jun;Kil, Gyu-Hyun;Lee, Sung-Hyun;Song, Yun-Heub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.385-385
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    • 2012
  • A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

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Metal Organic Chemical Vapor Deposition Characteristics of Germanium Precursors (Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구)

  • Kim, Sun-Hee;Kim, Bong-June;Kim, Do-Heyoung;Lee, June-Key
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.302-306
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    • 2008
  • Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.