• Journal of IKEEE
• /
• v.20 no.1
• /
• pp.26-30
• /
• 2016

In this paper, an inter-orthogonal frequency division multiplexing (OFDM) sub-carrier distortion due to fiber chromatic dispersion is investigated. The fiber chromatic dispersion induces phase difference among OFDM sub-carriers, resulting in non-symmetric peak to average power ratio (PAPR) inducing inter-OFDM distortion. Experiments to confirm the fiber dispersion are performed in a direct-detection optical front-haul link. Quadrature phase shift keying (QPSK) encoded OFDM symbols at 25 Gbit/s are transmitted over 100 km fiber and the resulting error vector magnitude (EVM) of 40 % is observed.

• Journal of the Optical Society of Korea
• /
• v.10 no.3
• /
• pp.112-117
• /
• 2006

We experimentally investigated the transmission characteristics of 400 Gbit/s (10 Gbit/s ${\times}$ 40 channels) WDM signals with 100 GHz channel spacing over 323 km of installed NZ_DSF. The installed fiber has optical properties of 0.28 dB/km attenuation, 4.3 ps/nm/km dispersion, $0.083ps/nm^2/km$ dispersion slope and less than $0.05ps/km^{1/2}$ PMD coefficient. In this experiment, two cases of dispersion compensation schemes, the lumped type and the distributed type, were compared. The results implied that the distributed type dispersion compensation in which dispersion compensation devices are inserted at the end of the each span showed better transmission performance than the lumped one in which dispersion compensation devices are located at the transmitter and receiver sites. From the analysis of the experimental results, we verified that different transmission performance comes from the power penalty induced by XPM in the distributed scheme is lower than the lumped scheme case.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.7
• /
• pp.15-22
• /
• 1997

A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

• Korean Journal of Optics and Photonics
• /
• v.13 no.2
• /
• pp.151-154
• /
• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• ETRI Journal
• /
• v.33 no.6
• /
• pp.965-968
• /
• 2011

A 1.485-Gbit/s video signal transmission system at carrier frequencies of 240 GHz and 300 GHz was implemented and demonstrated. The radio frequency front-ends are composed of Schottky barrier diode subharmonic mixers (SHMs), frequency triplers, and diagonal horn antennas for the transmitter and receiver. Amplitude shift keying with an intermediate frequency of 5.94 GHz was utilized as the modulation scheme. A 1.485-Gbit/s video signal with a high-definition serial digital interface format was successfully transmitted over a wireless link distance of 4.2 m and displayed on an HDTV with a transmitted average output power of 20 ${\mu}W$ at a 300-GHz system.

• Journal of electromagnetic engineering and science
• /
• v.4 no.2
• /
• pp.56-62
• /
• 2004

We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.6
• /
• pp.197-201
• /
• 1997

To realize 10-Gbit/s optical transmission systems, we designed and fabricated a limiting amplifier with extremely high operation frequencies over 10-GHz using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and investigated their performances. Circuit design and simulation were performed using SPICE and LABRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5${\times}$10$\mu\textrm{m}$$^2$, used for the circuit fabrication, exhibited the cutoff frequency of 63GHz and maximum oscillation frequency of 50GHz. After fabrication of MMICs, we observed the very wide bandwidth of DC∼15GHz for a limiting amplifier from the on-wafer measurement. Ceramic-packaged limiting amplifier showed the excellent eye opening, the output voltage swing of 750mV\ulcorner, and the rise/fall time of 40ps, measured at the data rates of 10-Gbit/s.

• Korean Journal of Optics and Photonics
• /
• v.12 no.3
• /
• pp.212-218
• /
• 2001

We experimentally investigated the dependence of extinction ratio and chirp on bias current which was injected into DFB-LD in a directly modulated 2.5 Obitls transmitter. Through the abnormal dispersion transmission, we found that transmission power penalty is minimized at 8-10 dB extinction ratio (bias current at 1.5-1.8 fold above threshold current). Also, we discussed the relation between extinction ratio and self phase modulation (SPM) through the 240 km abnormal dispersion transmission. When SPM takes effect, we obtained the best receiver sensitivity for specific system configuration at 10.4 dB and 8.4 dB extinction ratio, below and above 200km transmission distance, respectively. ively.

• Journal of the Optical Society of Korea
• /
• v.20 no.2
• /
• pp.276-282
• /
• 2016

A 2 Gbit/s visible-light communication (VLC) scheme using time-frequency color-clustered (TFCC) multiple-input multiple-output (MIMO) based on blue, cyan, yellow, and red (BCYR) light-emitting diodes (LEDs) is presented. In the proposed scheme, BCYR LEDs are employed to form four different color clusters. Data transmission using the four color clusters is performed in MIMO, so that the scheme achieves a very high speed of data transmission. Moreover, the scheme employs the TFCC strategy to yield high performance in terms of bit error rate (BER). TFCC operates in such a way that the original data and the two delayed versions of the data are multiplied by orthogonal frequencies and then transmitted using a specific color of the BCYR LED. In the receiver, color filters are employed to detect the data transmitted from the desired cluster. Selection combining (SC) is also performed to yield a diversity effect within each color cluster, to further improve the performance. Performance evaluation demonstrates that the proposed TFCC MIMO VLC offers a data rate of 2 Gbit/s and a bit error rate of 4×10^-5, at an E_b/N_o value of merely 3 dB.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.1
• /
• pp.34-40
• /
• 1998

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.