• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.748-754
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• 2000

A novel single feed wide band CP stacked microstrip antenna using crossed slots has been designed, fabricated and measured. For the single rediating element the designed 10dB return loss bandwidth is 34.5%99.45~13.54 GHz), 3dB axial ratio bandwidth is 18.7%(11.17~13.39GHz), and 6 dB gain bandwidth is 29%(10.21~13.64GHz). For the 2$\times$2 array designed using a sequential rotation method, the 10dB return loss bandwidth is 35.9%(9.69~13.94GHz), 3dB axial ratio bandwidth is 34.6GHz (9.93~14.03GHz), and 6dB gain bandwidth is 27.4%(10.35~13.6GHz). For the fabricated 8$\times$8 array antenna, the 10dB return loss bandwidth is 27.3%(10.17~13.41GHz), 3dB axial ratio bandwidth is 27.9GHz(10.1~13.4GHz), and the radiation pattern is good agreement with theory. This antenna can be used for broadband applications for communications or broadcasting in Ku band.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.807-815
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• 2019

In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1536-1538
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• 2000

In this paper, designed and fabricated the 1.9GHz band isolator for wire-less communication base-stations. It was investigated that characteristics of insertion loss and return loss. The characteristic results of dual structure design showed values that insertion loss was about -40dB and return loss was about -23dB at 1.93$\sim$1.99GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.1-7
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• 2016

In this paper, the tunable filter based on high power cavity using mechanical switch for 1.5 GHz band is presented. The LPF is inserted to eliminate the spurious wave, coupler is embeded to extract the output power, and then the tunable filter system is configured using mechanical switch. The LPF obtains attenuation over 40 dB between 4 GHz and 12.75 GHz, Coupler is satisfied with coupling value 40 dB and coupling isolation over 55 dB. The tunable filter system using mechanical switch obtains insertion loss 0.88 dB at bypass mode between 1,495.9 MHz and 1,510. 9 MHz, 3.29 dB at fil mode between 1,495.9 MHz and 1,500.9 MHz. It is also satisfied with output power of 132 W at the center frequency 1,498.4 MHz, and switching time below 10 ms.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.3A
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• pp.179-184
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• 2003

In this paper, an asymmetric topology of MMIC SPDT switch was proposed to increase the isolation in the receiving path and decrease the insertion loss with higher P1dB in the transmitting path for the ISM band. This SPDT switch was implemented with 0.5㎛ GaAs MESFETs processed by ETRI for the IDEC MPW project. For the receiving path the measured insertion losses were 1.518dB at 3GHz and 1.777dB at 5.75GHz and the isolations were 38.474dB at 3GHz and 29.125dB at 5.75GHz. For the transmitting path the insertion losses were 0.916dB at 3GHz and 1.162dB at 5.75GHz and the isolations were 23.259dB at 3GHz and 16.632dB at 5.75GHz. Compared to the symmetric topology the isolations of the receiving path for the asymmetric one were improved by 15.9dB at 3GHz and 11.9dB at 5.75GHz and its insertion loss was increased by about 0.6dB. In addition, P1dB of 21.5 dBm for the transmitting path was obtained, which is increased by 3.86dB compared to the symmetric one.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.265-271
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• 2015

In this paper, Dualband meander microstrip antenna is proposed for Wireless Body Area Network application. Designed antenna is mounted on the phantom to maintain a constant distance of the substrate, and studied the characteristics related to change in several meaningful parameters to improve performance. Characteristics of antenna, returnloss, radiation pattern, gain, bandwidth, are analyzed using Computer Simulation Technologes(CST) software. The proposed antenna operates at 4.33Ghz and 6.09GHz ~ 9.88GHz for UWB. The antenna showed that returnloss and -10dB bandwidth are -42.30dB and 410Mhz at 4.33GHz, maximum -29.11dB and 3.75GHz at 6.1GHz ~ 9.8GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.1-10
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• 1999

A low power concumption 2.4 GHz one-chip transceiver MMIC was designed and fabricated using $1.0\mu\textrm{m}$ ion-implantation MESFET process and packaged on a 24 lead SSOP. In the transmitter mode, it revealed conversion gain of 7.5 dB, output IP3 of -3.5 dBm, and noise figure of 3.9 dB at 2.44 GHz with 3.9 mA current consumption. In the receiver mode, it revealed voltage sensitivity of 6.5 mV/$\mu\$W with 2 .0 mA current consumption. Comparing the fabricated MMIC with the results of MMICs reported elsewhere, it was shown that the fabricated MMIC had good performance. The low power consumption 2.4 GHz transceiver MMIC is expected to be used for various applications such as wireless local area networks, wireless local loops and RFID tags in ISM-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.749-755
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• 2017

In this paper, a wideband microwave absorber for X-band(8~12 GHz) applications is proposed. The structure of the proposed absorber unit cell consists of a resonator with a slot and slit, a backing ground plate, and a Taconic RF-30(${\varepsilon}_r=3$, $tan{\delta}=0.0014$) substrate with a dimension of $8.5{\times}8.5{\times}0.5mm^3$. The proposed absorber has a dual resonance at 9.83 and 10.37 GHz. To demonstrate the operating principle of the proposed absorber structure at each resonance frequency, the simulated current distributions on the unit cell are analyzed. To verify the performance of the proposed absorber, a prototype absorber was fabricated with a planar array of $20{\times}20$ unit cells. The measured results exhibit two absorptivity peaks stronger than 99 % and full-width at half-maximum(FWHM) bandwidth of 1.1 GHz(9.51~10.61 GHz).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.89-94
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• 2007

For successful implementation of multi-standard transmitter, reconfigurable architecture and component design are essential. This paper presents a reconfigurable CMOS power amplifier designed CMOS 0.25 um process. Designed power amplifier can be operated at 0.9, 1.2, 1.75, and 1.85 GHz. Also, it can be used at 2.4 GHz by using bonding wire inductor. The interstage matching network is composed of two inductors and four switches, and operation frequency can be varied by controlling switches. Proposed power amplifier can be used as a power amplifier in low power applications such as ZigBee or Bluetooth application and used as a driver amplifier in high power application such as CDMA application. Designed power amplifier has 18.2 dB gain and 10.3 dBm output power at 0.9 GHz. Also, it represented 10.3 (18.1) dB gain and 5.2 (10) dBm output power at 1.75 (2.4) GHz.